JP5406421B2 - リバースプリンティング - Google Patents
リバースプリンティング Download PDFInfo
- Publication number
- JP5406421B2 JP5406421B2 JP2005216854A JP2005216854A JP5406421B2 JP 5406421 B2 JP5406421 B2 JP 5406421B2 JP 2005216854 A JP2005216854 A JP 2005216854A JP 2005216854 A JP2005216854 A JP 2005216854A JP 5406421 B2 JP5406421 B2 JP 5406421B2
- Authority
- JP
- Japan
- Prior art keywords
- organic semiconductor
- solvent
- layer
- semiconductor layer
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007639 printing Methods 0.000 title claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 145
- 238000000034 method Methods 0.000 claims description 68
- 239000002904 solvent Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 42
- 238000000151 deposition Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims 3
- 238000004090 dissolution Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 78
- 238000000059 patterning Methods 0.000 description 21
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 15
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 15
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 10
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 10
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 10
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 10
- 238000004528 spin coating Methods 0.000 description 10
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 9
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 229920003023 plastic Polymers 0.000 description 8
- 239000004033 plastic Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 238000003618 dip coating Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 5
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 5
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 5
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 5
- 229940117389 dichlorobenzene Drugs 0.000 description 5
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 5
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 5
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 5
- 229920000123 polythiophene Polymers 0.000 description 5
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
- 239000008096 xylene Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Divinylene sulfide Natural products C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229930192474 thiophene Natural products 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 150000001338 aliphatic hydrocarbons Chemical group 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 150000003457 sulfones Chemical class 0.000 description 3
- 150000003462 sulfoxides Chemical class 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000010017 direct printing Methods 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Weting (AREA)
Description
Claims (3)
- 基板表面を準備するステップと、
前記基板表面上に有機半導体材料の層を堆積させるステップと、
印刷にて前記有機半導体層上に溶媒滴のパターンを堆積させ、前記有機半導体層を実質的に局所的に溶解させてパターニングされた前記有機半導体層を形成し、前記溶媒を蒸発させ、前記蒸発後、溶解された前記有機半導体材料を溶解されてない前記有機半導体層へと移動させて、前記溶媒中に溶けていた前記有機半導体素材を再凝固させ、前記溶媒と前記有機半導体素材とが接していたラインに沿って再堆積させることにより鮮明なパターンを有する半導体構造を形成するステップと、
を有する半導体装置を製造するためのリバースインクジェットプリント方法。 - a)基板を準備するステップと、
b)前記基板表面上にゲート電極、ソース電極及びドレイン電極を形成するステップと、
c)ゲート誘電体層を形成するステップと、
d)前記ゲート誘電体層、前記ソース電極及び前記ドレイン電極と接するよう有機半導体層を形成するステップと、
e)前記有機半導体層上に1種類又は複数種類の溶媒のパターンを印刷し、前記有機半導体層を実質的に局所的に溶解させてパターニングされた前記有機半導体層を形成し、前記溶媒を蒸発させ、前記蒸発後、溶解された前記有機半導体材料を溶解されてない前記有機半導体層へと移動させて、前記溶媒中に溶けていた前記有機半導体素材を再凝固させ、前記溶媒と前記有機半導体素材とが接していたラインに沿って再堆積させることにより鮮明なパターンを有する半導体構造を形成するステップと、
を有する方法。 - 基板表面と、
前記基板表面上にある有機半導体素材による層と、
を備え、
前記有機半導体素材による層が溶媒の印刷によって、前記有機半導体素材による層を実質的に局所的に溶解させてパターニングされた前記有機半導体層を形成し、前記溶媒を蒸発させ、前記蒸発後、溶解された前記有機半導体素材による層を溶解されてない前記有機半導体素材による層へと移動させて、前記溶媒中に溶けていた前記有機半導体素材を再凝固させ、前記溶媒と前記有機半導体素材とが接していたラインに沿って再堆積させることにより鮮明なパターンを有する半導体構造が形成された半導体デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/909,081 US7105375B2 (en) | 2004-07-30 | 2004-07-30 | Reverse printing |
US10/909,081 | 2004-07-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006049891A JP2006049891A (ja) | 2006-02-16 |
JP5406421B2 true JP5406421B2 (ja) | 2014-02-05 |
Family
ID=35732819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005216854A Active JP5406421B2 (ja) | 2004-07-30 | 2005-07-27 | リバースプリンティング |
Country Status (3)
Country | Link |
---|---|
US (1) | US7105375B2 (ja) |
JP (1) | JP5406421B2 (ja) |
CA (1) | CA2514133C (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5916976B2 (ja) * | 2006-05-18 | 2016-05-11 | コニカミノルタ株式会社 | 有機薄膜トランジスタの形成方法、及び有機薄膜トランジスタ |
EP1930963B1 (en) * | 2006-12-07 | 2016-03-02 | Samsung Display Co., Ltd. | Method of manufacturing a semiconducting device and semiconducting device |
US8981348B2 (en) * | 2006-12-07 | 2015-03-17 | Samsung Display Co., Ltd. | Semiconducting element, organic light emitting display including the same, and method of manufacturing the semiconducting element |
WO2009067577A1 (en) * | 2007-11-21 | 2009-05-28 | The Board Of Trustees Of The Leland Stanford Junior University. | Patterning of organic semiconductor materials |
US8136922B2 (en) * | 2009-09-01 | 2012-03-20 | Xerox Corporation | Self-assembly monolayer modified printhead |
FR2954918B1 (fr) | 2010-01-04 | 2012-01-27 | Commissariat Energie Atomique | Procede de realisation de trous a l'aide d'un jet d'eau |
EP2608251A4 (en) * | 2010-08-18 | 2014-01-15 | Nat Inst Of Advanced Ind Scien | METHOD FOR PRODUCING AN ORGANIC SEMICONDUCTOR THIN LAYER AND A MONOCRYSTALLINE ORGANIC SEMICONDUCTOR THIN LAYER |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02123768A (ja) * | 1988-11-02 | 1990-05-11 | Mitsubishi Electric Corp | 有機半導体薄膜の製造方法および該薄膜を含む半導体デバイス |
JP3229435B2 (ja) | 1993-04-28 | 2001-11-19 | 住友特殊金属株式会社 | 射出成形法によるR−Fe−B系焼結磁石の製造方法 |
JPH07286117A (ja) | 1994-04-20 | 1995-10-31 | Hitachi Chem Co Ltd | 光硬化性防湿絶縁塗料および防湿絶縁された電子部品の製造法 |
US5946551A (en) * | 1997-03-25 | 1999-08-31 | Dimitrakopoulos; Christos Dimitrios | Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric |
US5981970A (en) * | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
JP3541625B2 (ja) * | 1997-07-02 | 2004-07-14 | セイコーエプソン株式会社 | 表示装置及びアクティブマトリクス基板 |
JP3580092B2 (ja) * | 1997-08-21 | 2004-10-20 | セイコーエプソン株式会社 | アクティブマトリクス型表示装置 |
US5936259A (en) * | 1997-10-16 | 1999-08-10 | Lucent Technologies Inc. | Thin film transistor and organic semiconductor material thereof |
CA2323879C (en) * | 1998-04-10 | 2007-01-16 | E Ink Corporation | Electronic displays using organic-based field effect transistors |
US6265243B1 (en) * | 1999-03-29 | 2001-07-24 | Lucent Technologies Inc. | Process for fabricating organic circuits |
US6498114B1 (en) * | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
GB9910964D0 (en) * | 1999-05-12 | 1999-07-14 | Secr Defence | Conducting polymers |
AU7094400A (en) * | 1999-08-31 | 2001-03-26 | E-Ink Corporation | A solvent annealing process for forming a thin semiconductor film with advantageous properties |
EP1208612B1 (en) * | 1999-08-31 | 2011-01-12 | E Ink Corporation | Method for forming a patterned semiconductor film |
CA2394881A1 (en) * | 1999-12-21 | 2001-06-28 | Plastic Logic Limited | Solution processed devices |
US6403397B1 (en) * | 2000-06-28 | 2002-06-11 | Agere Systems Guardian Corp. | Process for fabricating organic semiconductor device involving selective patterning |
GB2367788A (en) * | 2000-10-16 | 2002-04-17 | Seiko Epson Corp | Etching using an ink jet print head |
JP4841751B2 (ja) * | 2001-06-01 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 有機半導体装置及びその作製方法 |
CN100334263C (zh) * | 2001-08-09 | 2007-08-29 | 旭化成株式会社 | 有机半导体元件 |
JP2003149831A (ja) * | 2001-11-09 | 2003-05-21 | Seiko Epson Corp | 単分子層のパターン形成方法、パターン化単分子層を利用した導電膜パターンの形成方法、及び電気光学装置 |
GB0130485D0 (en) * | 2001-12-21 | 2002-02-06 | Plastic Logic Ltd | Self-aligned printing |
US6603141B2 (en) * | 2001-12-28 | 2003-08-05 | Motorola, Inc. | Organic semiconductor and method |
US6949762B2 (en) * | 2002-01-11 | 2005-09-27 | Xerox Corporation | Polythiophenes and devices thereof |
US6770904B2 (en) * | 2002-01-11 | 2004-08-03 | Xerox Corporation | Polythiophenes and electronic devices generated therefrom |
US6621099B2 (en) * | 2002-01-11 | 2003-09-16 | Xerox Corporation | Polythiophenes and devices thereof |
US6620657B2 (en) * | 2002-01-15 | 2003-09-16 | International Business Machines Corporation | Method of forming a planar polymer transistor using substrate bonding techniques |
JP4545373B2 (ja) * | 2002-11-07 | 2010-09-15 | 旭化成株式会社 | 有機半導体薄膜及びその製造方法 |
US7053401B2 (en) * | 2002-12-20 | 2006-05-30 | International Business Machines Corporation | Synthesis and application of photosensitive pentacene precursor in organic thin film transistors |
-
2004
- 2004-07-30 US US10/909,081 patent/US7105375B2/en not_active Expired - Lifetime
-
2005
- 2005-07-27 JP JP2005216854A patent/JP5406421B2/ja active Active
- 2005-07-29 CA CA2514133A patent/CA2514133C/en active Active
Also Published As
Publication number | Publication date |
---|---|
CA2514133C (en) | 2013-01-15 |
US20060024859A1 (en) | 2006-02-02 |
JP2006049891A (ja) | 2006-02-16 |
US7105375B2 (en) | 2006-09-12 |
CA2514133A1 (en) | 2006-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4433796B2 (ja) | 基板上パターン層の製造方法 | |
JP5428104B2 (ja) | 有機半導体組成物 | |
JP5060695B2 (ja) | 電子素子配列から電子回路を構成する方法および該方法により形成される電子回路 | |
JP5406421B2 (ja) | リバースプリンティング | |
US8277900B2 (en) | Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board | |
US7709306B2 (en) | Active layer island | |
JP5360737B2 (ja) | 有機トランジスタの製造方法および有機トランジスタ | |
JP4730623B2 (ja) | 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器 | |
KR100909481B1 (ko) | 잉크젯으로 제조되는 집적회로 및 전자 디바이스 제조 방법 | |
US20100078639A1 (en) | Thin film semiconductor device fabrication method and thin film semiconductor device | |
JP2012156543A (ja) | ポリマー薄膜における自己整合ビアホールの形成 | |
US20070082438A1 (en) | Thin film transistor and method for fabrication of an electronic device | |
US9263686B2 (en) | Method of manufacturing organic thin film transistor having organic polymer insulating layer | |
KR100770729B1 (ko) | 반도체 장치의 제조 방법 및 전자 기기의 제조 방법 | |
JP2007095777A (ja) | 有機半導体薄膜の製造方法及び有機半導体薄膜並びに電界効果トランジスタ | |
JP5715664B2 (ja) | 有機半導体組成物 | |
US8691621B1 (en) | Thiol bond formation concurrent with silver nanoparticle ink thermal treatment | |
US20080093594A1 (en) | Organic semiconductor device, manufacturing method of the same, organic transistor array, and display | |
CA2675083C (en) | Device and process involving pinhole undercut area | |
JP2009239033A (ja) | 有機薄膜トランジスタまたは/および有機薄膜トランジスタアレイの製造方法と有機薄膜トランジスタ、有機薄膜トランジスタアレイ | |
KR20180046257A (ko) | 박막 트랜지스터 제조 방법, 박막 트랜지스터, 및 이를 포함하는 전자 소자 | |
WO2014080575A1 (en) | Method for treating metal surface with thiol | |
JP5103982B2 (ja) | 有機半導体素子の製造方法 | |
JP2006281137A (ja) | 膜付き基板の製造方法、および電子機器の製造方法 | |
JP2008192669A (ja) | 有機半導体用組成物、及びトランジスタの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080724 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120309 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120828 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121226 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130111 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20130315 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130917 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131101 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5406421 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |