JP5399151B2 - 誘導結合プラズマ処理装置、プラズマ処理方法及び記憶媒体 - Google Patents

誘導結合プラズマ処理装置、プラズマ処理方法及び記憶媒体 Download PDF

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JP5399151B2
JP5399151B2 JP2009165598A JP2009165598A JP5399151B2 JP 5399151 B2 JP5399151 B2 JP 5399151B2 JP 2009165598 A JP2009165598 A JP 2009165598A JP 2009165598 A JP2009165598 A JP 2009165598A JP 5399151 B2 JP5399151 B2 JP 5399151B2
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circuit
antenna
parallel
inductively coupled
impedance
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JP2010135298A5 (enExample
JP2010135298A (ja
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和男 佐々木
均 齊藤
亮 佐藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2009165598A priority Critical patent/JP5399151B2/ja
Priority to TW098135948A priority patent/TWI508633B/zh
Priority to CN200910207040.2A priority patent/CN101730375B/zh
Priority to KR1020090102183A priority patent/KR101143742B1/ko
Publication of JP2010135298A publication Critical patent/JP2010135298A/ja
Priority to KR1020110062799A priority patent/KR20110089116A/ko
Publication of JP2010135298A5 publication Critical patent/JP2010135298A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2009165598A 2008-10-27 2009-07-14 誘導結合プラズマ処理装置、プラズマ処理方法及び記憶媒体 Active JP5399151B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009165598A JP5399151B2 (ja) 2008-10-27 2009-07-14 誘導結合プラズマ処理装置、プラズマ処理方法及び記憶媒体
TW098135948A TWI508633B (zh) 2008-10-27 2009-10-23 Inductively coupled plasma processing device, plasma processing method and memory medium
CN200910207040.2A CN101730375B (zh) 2008-10-27 2009-10-27 感应耦合等离子体处理装置和等离子体处理方法
KR1020090102183A KR101143742B1 (ko) 2008-10-27 2009-10-27 유도 결합 플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체
KR1020110062799A KR20110089116A (ko) 2008-10-27 2011-06-28 유도 결합 플라즈마 처리 장치 및 플라즈마 처리 방법

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Application Number Priority Date Filing Date Title
JP2008275580 2008-10-27
JP2008275580 2008-10-27
JP2009165598A JP5399151B2 (ja) 2008-10-27 2009-07-14 誘導結合プラズマ処理装置、プラズマ処理方法及び記憶媒体

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JP2010135298A5 JP2010135298A5 (enExample) 2012-06-28
JP5399151B2 true JP5399151B2 (ja) 2014-01-29

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JP2013094410A Expired - Fee Related JP5566498B2 (ja) 2008-10-27 2013-04-26 誘導結合プラズマ処理装置、プラズマ処理方法及び記憶媒体

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JP (2) JP5399151B2 (enExample)
KR (1) KR20110089116A (enExample)
CN (1) CN101730375B (enExample)
TW (1) TWI508633B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210030371A (ko) 2018-07-26 2021-03-17 와이에이씨 테크놀로지 가부시키가이샤 플라즈마 처리 장치
TWI767618B (zh) * 2020-04-02 2022-06-11 大陸商中微半導體設備（上海）股份有限公司 等離子體反應器及其射頻功率分佈調節方法

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US20110097901A1 (en) * 2009-10-26 2011-04-28 Applied Materials, Inc. Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
JP5595136B2 (ja) * 2010-06-18 2014-09-24 三菱重工業株式会社 誘導結合プラズマ発生装置
JP5916044B2 (ja) * 2010-09-28 2016-05-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5851682B2 (ja) * 2010-09-28 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP5723130B2 (ja) * 2010-09-28 2015-05-27 東京エレクトロン株式会社 プラズマ処理装置
JP5800532B2 (ja) * 2011-03-03 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5800547B2 (ja) * 2011-03-29 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
JP2013077715A (ja) * 2011-09-30 2013-04-25 Tokyo Electron Ltd 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置
JP2013105664A (ja) * 2011-11-15 2013-05-30 Tokyo Electron Ltd 高周波アンテナ回路及び誘導結合プラズマ処理装置
JP5894785B2 (ja) * 2011-12-19 2016-03-30 東京エレクトロン株式会社 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置
JP5878771B2 (ja) * 2012-02-07 2016-03-08 東京エレクトロン株式会社 誘導結合プラズマ処理方法および誘導結合プラズマ処理装置
KR20140059422A (ko) * 2012-11-08 2014-05-16 엘아이지에이디피 주식회사 유도 결합 플라즈마 처리 장치 및 그 제어방법
KR20140066483A (ko) * 2012-11-23 2014-06-02 엘아이지에이디피 주식회사 유도 결합 플라즈마 처리 장치 및 그 제어방법
KR20140089458A (ko) * 2013-01-04 2014-07-15 피에스케이 주식회사 플라즈마 챔버 및 기판 처리 장치
CN106601579B (zh) * 2015-10-19 2019-02-19 北京北方华创微电子装备有限公司 上电极机构及半导体加工设备
KR101939661B1 (ko) * 2017-08-22 2019-01-18 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR101986744B1 (ko) * 2017-09-27 2019-06-07 주식회사 유진테크 플라즈마 처리 장치 및 방법
KR101972783B1 (ko) * 2017-10-13 2019-08-16 주식회사 유진테크 Icp 안테나 및 이를 포함하는 플라즈마 처리 장치
US11515122B2 (en) * 2019-03-19 2022-11-29 Tokyo Electron Limited System and methods for VHF plasma processing
KR102081686B1 (ko) * 2019-05-16 2020-02-26 주식회사 유진테크 플라즈마를 이용한 기판 처리 방법
CN111430211A (zh) * 2020-04-02 2020-07-17 上海理想万里晖薄膜设备有限公司 用于等离子体处理设备的射频系统及其调节方法
JP7650834B2 (ja) * 2022-02-16 2025-03-25 東京エレクトロン株式会社 プラズマ処理装置

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JP3077009B2 (ja) * 1993-03-27 2000-08-14 東京エレクトロン株式会社 プラズマ処理装置
JPH0982495A (ja) * 1995-09-18 1997-03-28 Toshiba Corp プラズマ生成装置およびプラズマ生成方法
JPH11152576A (ja) * 1997-11-17 1999-06-08 Sony Corp プラズマｃｖｄ装置及び薄膜成膜方法
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
JP4852189B2 (ja) * 1999-03-09 2012-01-11 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
KR100338057B1 (ko) * 1999-08-26 2002-05-24 황 철 주 유도 결합형 플라즈마 발생용 안테나 장치
US7096819B2 (en) * 2001-03-30 2006-08-29 Lam Research Corporation Inductive plasma processor having coil with plural windings and method of controlling plasma density
JP4042363B2 (ja) * 2001-07-23 2008-02-06 株式会社日立国際電気 プラズマ生成用の螺旋共振装置
KR100486712B1 (ko) * 2002-09-04 2005-05-03 삼성전자주식회사 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치
KR100486724B1 (ko) * 2002-10-15 2005-05-03 삼성전자주식회사 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치
JP2006216903A (ja) * 2005-02-07 2006-08-17 Hitachi High-Technologies Corp プラズマ処理装置
JP2007311182A (ja) * 2006-05-18 2007-11-29 Tokyo Electron Ltd 誘導結合プラズマ処理装置およびプラズマ処理方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210030371A (ko) 2018-07-26 2021-03-17 와이에이씨 테크놀로지 가부시키가이샤 플라즈마 처리 장치
US11515119B2 (en) 2018-07-26 2022-11-29 Y.A.C. Technologies Co., Ltd. Plasma processing device
TWI767618B (zh) * 2020-04-02 2022-06-11 大陸商中微半導體設備（上海）股份有限公司 等離子體反應器及其射頻功率分佈調節方法

Also Published As

Publication number Publication date
CN101730375B (zh) 2015-09-02
KR20110089116A (ko) 2011-08-04
CN101730375A (zh) 2010-06-09
TW201026166A (en) 2010-07-01
JP2010135298A (ja) 2010-06-17
TWI508633B (zh) 2015-11-11
JP2013201134A (ja) 2013-10-03
JP5566498B2 (ja) 2014-08-06

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