JP5397215B2 - 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム - Google Patents

半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム Download PDF

Info

Publication number
JP5397215B2
JP5397215B2 JP2009293839A JP2009293839A JP5397215B2 JP 5397215 B2 JP5397215 B2 JP 5397215B2 JP 2009293839 A JP2009293839 A JP 2009293839A JP 2009293839 A JP2009293839 A JP 2009293839A JP 5397215 B2 JP5397215 B2 JP 5397215B2
Authority
JP
Japan
Prior art keywords
adhesion probability
chamber
probability
adhesion
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009293839A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011134927A (ja
JP2011134927A5 (https=
Inventor
信行 久保井
哲也 辰巳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2009293839A priority Critical patent/JP5397215B2/ja
Priority to TW99139808A priority patent/TWI469214B/zh
Priority to KR1020100122501A priority patent/KR20110074665A/ko
Priority to US12/962,816 priority patent/US8649893B2/en
Priority to CN201010593711.6A priority patent/CN102136412B/zh
Publication of JP2011134927A publication Critical patent/JP2011134927A/ja
Publication of JP2011134927A5 publication Critical patent/JP2011134927A5/ja
Application granted granted Critical
Publication of JP5397215B2 publication Critical patent/JP5397215B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009293839A 2009-12-25 2009-12-25 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム Active JP5397215B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009293839A JP5397215B2 (ja) 2009-12-25 2009-12-25 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム
TW99139808A TWI469214B (zh) 2009-12-25 2010-11-18 半導體製造裝置，半導體裝置製造方法，模擬裝置及模擬程式
KR1020100122501A KR20110074665A (ko) 2009-12-25 2010-12-03 반도체 제조 장치, 반도체 장치의 제조 방법, 시뮬레이션 장치 및 시뮬레이션 프로그램
US12/962,816 US8649893B2 (en) 2009-12-25 2010-12-08 Semiconductor manufacturing device, semiconductor device manufacturing method, simulation device, and simulation program
CN201010593711.6A CN102136412B (zh) 2009-12-25 2010-12-17 半导体制造装置和半导体器件制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009293839A JP5397215B2 (ja) 2009-12-25 2009-12-25 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム

Publications (3)

Publication Number Publication Date
JP2011134927A JP2011134927A (ja) 2011-07-07
JP2011134927A5 JP2011134927A5 (https=) 2013-02-14
JP5397215B2 true JP5397215B2 (ja) 2014-01-22

Family

ID=44188478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009293839A Active JP5397215B2 (ja) 2009-12-25 2009-12-25 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム

Country Status (5)

Country Link
US (1) US8649893B2 (https=)
JP (1) JP5397215B2 (https=)
KR (1) KR20110074665A (https=)
CN (1) CN102136412B (https=)
TW (1) TWI469214B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5802069B2 (ja) * 2011-06-30 2015-10-28 株式会社ニューフレアテクノロジー 気相成長方法及び気相成長装置
US9287097B2 (en) * 2011-11-30 2016-03-15 Sony Corporation Predicting ultraviolet ray damage with visible wavelength spectroscopy during a semiconductor manufacturing process
US9002498B2 (en) * 2012-02-02 2015-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Tool function to improve fab process in semiconductor manufacturing
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
JP6570894B2 (ja) * 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
US11233593B2 (en) * 2018-12-11 2022-01-25 At&T Intellectual Property I, L.P. Signal strength prediction based on line of sight analysis
US11840757B2 (en) * 2020-07-08 2023-12-12 Tdk Corporation Film deposition system, factory system, and method of depositing film on wafer

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252178A (en) * 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
US5573597A (en) * 1995-06-07 1996-11-12 Sony Corporation Plasma processing system with reduced particle contamination
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US5904800A (en) * 1997-02-03 1999-05-18 Motorola, Inc. Semiconductor wafer processing chamber for reducing particles deposited onto the semiconductor wafer
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
JPH1116858A (ja) * 1997-06-21 1999-01-22 Tokyo Electron Ltd 成膜装置のクリーニング方法及び処理方法
JP4095246B2 (ja) * 1997-07-22 2008-06-04 松下電器産業株式会社 半導体装置の製造方法
JPH1187247A (ja) * 1997-09-02 1999-03-30 Matsushita Electron Corp 半導体装置の製造装置及びその製造方法
JP4237317B2 (ja) * 1997-12-26 2009-03-11 株式会社日立製作所 プラズマ処理装置
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
DE19814871A1 (de) * 1998-04-02 1999-10-07 Max Planck Gesellschaft Verfahren und Vorrichtung zur gezielten Teilchenmanipulierung und -deposition
US6184489B1 (en) * 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6106634A (en) * 1999-02-11 2000-08-22 Applied Materials, Inc. Methods and apparatus for reducing particle contamination during wafer transport
JP4819267B2 (ja) * 1999-08-17 2011-11-24 東京エレクトロン株式会社 パルスプラズマ処理方法および装置
US6432255B1 (en) * 2000-01-31 2002-08-13 Applied Materials, Inc. Method and apparatus for enhancing chamber cleaning
US6786935B1 (en) * 2000-03-10 2004-09-07 Applied Materials, Inc. Vacuum processing system for producing components
JP2002110635A (ja) * 2000-10-03 2002-04-12 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP4213871B2 (ja) * 2001-02-01 2009-01-21 株式会社日立製作所 半導体装置の製造方法
US20030037801A1 (en) * 2001-08-27 2003-02-27 Applied Materials, Inc. Method for increasing the efficiency of substrate processing chamber contamination detection
JP2003197609A (ja) * 2001-12-27 2003-07-11 Tokyo Electron Ltd プラズマ処理装置の監視方法及びプラズマ処理装置
JP3905466B2 (ja) * 2002-12-05 2007-04-18 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2006524914A (ja) * 2003-03-31 2006-11-02 東京エレクトロン株式会社 プラズマ処理システム及び方法
KR100976648B1 (ko) * 2003-05-16 2010-08-18 도쿄엘렉트론가부시키가이샤 헬스 인덱스 처리 시스템 및 이를 이용한 방법
JP4754196B2 (ja) * 2003-08-25 2011-08-24 東京エレクトロン株式会社 減圧処理室内の部材清浄化方法および基板処理装置
US8608422B2 (en) * 2003-10-08 2013-12-17 Tokyo Electron Limited Particle sticking prevention apparatus and plasma processing apparatus
JP4448335B2 (ja) * 2004-01-08 2010-04-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR100672820B1 (ko) * 2004-11-12 2007-01-22 삼성전자주식회사 플라즈마를 사용한 피처리체의 처리 방법
JP4979389B2 (ja) * 2004-12-17 2012-07-18 東京エレクトロン株式会社 プラズマ処理装置
JP2006216710A (ja) * 2005-02-02 2006-08-17 Hitachi High-Technologies Corp 半導体製造装置
JP2007073751A (ja) * 2005-09-07 2007-03-22 Hitachi High-Technologies Corp プラズマ処理装置および処理方法
JP5121698B2 (ja) * 2006-03-06 2013-01-16 東京エレクトロン株式会社 プラズマ処理装置
JP4674177B2 (ja) * 2006-03-15 2011-04-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4914119B2 (ja) * 2006-05-31 2012-04-11 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US7799138B2 (en) * 2006-06-22 2010-09-21 Hitachi Global Storage Technologies Netherlands In-situ method to reduce particle contamination in a vacuum plasma processing tool
US8075952B2 (en) * 2006-06-29 2011-12-13 Applied Materials, Inc. Power loading substrates to reduce particle contamination
US20080142481A1 (en) * 2006-12-18 2008-06-19 White John M In-situ particle collector
JP4959457B2 (ja) * 2007-07-26 2012-06-20 東京エレクトロン株式会社 基板搬送モジュール及び基板処理システム
JP5010414B2 (ja) * 2007-09-26 2012-08-29 東京エレクトロン株式会社 基板処理システム，基板処理装置の制御方法，およびプログラム
US8101510B2 (en) * 2009-04-03 2012-01-24 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus

Also Published As

Publication number Publication date
CN102136412A (zh) 2011-07-27
JP2011134927A (ja) 2011-07-07
TWI469214B (zh) 2015-01-11
KR20110074665A (ko) 2011-07-01
CN102136412B (zh) 2014-10-08
US20110160889A1 (en) 2011-06-30
TW201126599A (en) 2011-08-01
US8649893B2 (en) 2014-02-11

Similar Documents

Publication Publication Date Title
JP5397215B2 (ja) 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム
TWI496185B (zh) 依電漿加工法之加工形狀的預測系統，其方法及程式
US11101138B2 (en) Etching method
JP7712394B2 (ja) 特徴モデルを使用するプロセスレシピ作成およびマッチング
TWI661323B (zh) 模擬方法，模擬程式，製程控制系統，模擬器，製程設計方法及光罩設計方法
KR20140135725A (ko) 그래핀 형성 방법 및 시스템
Economou et al. Uniformity of etching in parallel plate plasma reactors
US20120150330A1 (en) Method of controlling semiconductor process distribution
US9287097B2 (en) Predicting ultraviolet ray damage with visible wavelength spectroscopy during a semiconductor manufacturing process
CN111261544A (zh) 原位实时等离子腔室状态监测
US10534355B2 (en) Information processing device, processing device, prediction method, and processing method
WO2010095196A1 (ja) プラズマ処理方法およびプラズマ処理装置
Ma et al. Recombination coefficients for Cl on plasma-conditioned yttrium oxide chamber wall surfaces
JP5778893B2 (ja) 終点検出装置、プラズマ処理装置および終点検出方法
KR20160053418A (ko) 증착 속도 예측 방법
JP2013115354A (ja) シミュレーション方法、シミュレーションプログラム、半導体製造装置
JP2006274420A (ja) プラズマ成膜方法及びプラズマｃｖｄ装置
JP2018083972A (ja) スパッタリング装置及び膜の製造方法
US20060049036A1 (en) Method and apparatus for real-time control and monitor of deposition processes
KR20250165653A (ko) 다변 (multivariate) 모델을 사용한 프로세스 진단 및 설계
Chingsungnoen et al. Spectroscopic Electron Temperature Measurement in Methane/helium Plasma During Diamond-like Carbon Coating
KR20250160172A (ko) 제조 툴 교정
Song et al. Atomic and molecular data for industrial application plasmas

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121219

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130724

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130730

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130905

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130924

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131007

R151 Written notification of patent or utility model registration

Ref document number: 5397215

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250