CN102136412B - 半导体制造装置和半导体器件制造方法 - Google Patents

半导体制造装置和半导体器件制造方法 Download PDF

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Publication number
CN102136412B
CN102136412B CN201010593711.6A CN201010593711A CN102136412B CN 102136412 B CN102136412 B CN 102136412B CN 201010593711 A CN201010593711 A CN 201010593711A CN 102136412 B CN102136412 B CN 102136412B
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China
Prior art keywords
sticking probability
value
chamber
probability
particle density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201010593711.6A
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English (en)
Chinese (zh)
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CN102136412A (zh
Inventor
久保井信行
辰巳哲也
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Sony Corp
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Sony Corp
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CN201010593711.6A 2009-12-25 2010-12-17 半导体制造装置和半导体器件制造方法 Expired - Fee Related CN102136412B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009293839A JP5397215B2 (ja) 2009-12-25 2009-12-25 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム
JP2009-293839 2009-12-25

Publications (2)

Publication Number Publication Date
CN102136412A CN102136412A (zh) 2011-07-27
CN102136412B true CN102136412B (zh) 2014-10-08

Family

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Family Applications (1)

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CN201010593711.6A Expired - Fee Related CN102136412B (zh) 2009-12-25 2010-12-17 半导体制造装置和半导体器件制造方法

Country Status (5)

Country Link
US (1) US8649893B2 (https=)
JP (1) JP5397215B2 (https=)
KR (1) KR20110074665A (https=)
CN (1) CN102136412B (https=)
TW (1) TWI469214B (https=)

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US9002498B2 (en) * 2012-02-02 2015-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Tool function to improve fab process in semiconductor manufacturing
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
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US11233593B2 (en) * 2018-12-11 2022-01-25 At&T Intellectual Property I, L.P. Signal strength prediction based on line of sight analysis
US11840757B2 (en) * 2020-07-08 2023-12-12 Tdk Corporation Film deposition system, factory system, and method of depositing film on wafer

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CN1641841A (zh) * 2004-01-08 2005-07-20 东京毅力科创株式会社 等离子体处理方法和等离子体装置

Also Published As

Publication number Publication date
CN102136412A (zh) 2011-07-27
JP2011134927A (ja) 2011-07-07
TWI469214B (zh) 2015-01-11
JP5397215B2 (ja) 2014-01-22
KR20110074665A (ko) 2011-07-01
US20110160889A1 (en) 2011-06-30
TW201126599A (en) 2011-08-01
US8649893B2 (en) 2014-02-11

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