TWI469214B - 半導體製造裝置，半導體裝置製造方法，模擬裝置及模擬程式 - Google Patents

半導體製造裝置，半導體裝置製造方法，模擬裝置及模擬程式 Download PDF

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Publication number
TWI469214B
TWI469214B TW99139808A TW99139808A TWI469214B TW I469214 B TWI469214 B TW I469214B TW 99139808 A TW99139808 A TW 99139808A TW 99139808 A TW99139808 A TW 99139808A TW I469214 B TWI469214 B TW I469214B
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Taiwan
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adhesion probability
chamber
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TW99139808A
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English (en)
Chinese (zh)
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TW201126599A (en
Inventor
久保井信行
辰巳哲也
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新力股份有限公司
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Publication of TW201126599A publication Critical patent/TW201126599A/zh
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Publication of TWI469214B publication Critical patent/TWI469214B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
TW99139808A 2009-12-25 2010-11-18 半導體製造裝置，半導體裝置製造方法，模擬裝置及模擬程式 TWI469214B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009293839A JP5397215B2 (ja) 2009-12-25 2009-12-25 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム

Publications (2)

Publication Number Publication Date
TW201126599A TW201126599A (en) 2011-08-01
TWI469214B true TWI469214B (zh) 2015-01-11

Family

ID=44188478

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99139808A TWI469214B (zh) 2009-12-25 2010-11-18 半導體製造裝置，半導體裝置製造方法，模擬裝置及模擬程式

Country Status (5)

Country Link
US (1) US8649893B2 (https=)
JP (1) JP5397215B2 (https=)
KR (1) KR20110074665A (https=)
CN (1) CN102136412B (https=)
TW (1) TWI469214B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5802069B2 (ja) * 2011-06-30 2015-10-28 株式会社ニューフレアテクノロジー 気相成長方法及び気相成長装置
US9287097B2 (en) * 2011-11-30 2016-03-15 Sony Corporation Predicting ultraviolet ray damage with visible wavelength spectroscopy during a semiconductor manufacturing process
US9002498B2 (en) * 2012-02-02 2015-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Tool function to improve fab process in semiconductor manufacturing
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
JP6570894B2 (ja) * 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
US11233593B2 (en) * 2018-12-11 2022-01-25 At&T Intellectual Property I, L.P. Signal strength prediction based on line of sight analysis
US11840757B2 (en) * 2020-07-08 2023-12-12 Tdk Corporation Film deposition system, factory system, and method of depositing film on wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050087136A1 (en) * 2003-10-08 2005-04-28 Tokyo Electron Limited Particle sticking prevention apparatus and plasma processing apparatus
US20090028672A1 (en) * 2007-07-26 2009-01-29 Tokyo Electron Limited Substrate transfer module and substrate processing system

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252178A (en) * 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
US5573597A (en) * 1995-06-07 1996-11-12 Sony Corporation Plasma processing system with reduced particle contamination
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US5904800A (en) * 1997-02-03 1999-05-18 Motorola, Inc. Semiconductor wafer processing chamber for reducing particles deposited onto the semiconductor wafer
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
JPH1116858A (ja) * 1997-06-21 1999-01-22 Tokyo Electron Ltd 成膜装置のクリーニング方法及び処理方法
JP4095246B2 (ja) * 1997-07-22 2008-06-04 松下電器産業株式会社 半導体装置の製造方法
JPH1187247A (ja) * 1997-09-02 1999-03-30 Matsushita Electron Corp 半導体装置の製造装置及びその製造方法
JP4237317B2 (ja) * 1997-12-26 2009-03-11 株式会社日立製作所 プラズマ処理装置
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
DE19814871A1 (de) * 1998-04-02 1999-10-07 Max Planck Gesellschaft Verfahren und Vorrichtung zur gezielten Teilchenmanipulierung und -deposition
US6184489B1 (en) * 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6106634A (en) * 1999-02-11 2000-08-22 Applied Materials, Inc. Methods and apparatus for reducing particle contamination during wafer transport
JP4819267B2 (ja) * 1999-08-17 2011-11-24 東京エレクトロン株式会社 パルスプラズマ処理方法および装置
US6432255B1 (en) * 2000-01-31 2002-08-13 Applied Materials, Inc. Method and apparatus for enhancing chamber cleaning
US6786935B1 (en) * 2000-03-10 2004-09-07 Applied Materials, Inc. Vacuum processing system for producing components
JP2002110635A (ja) * 2000-10-03 2002-04-12 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP4213871B2 (ja) * 2001-02-01 2009-01-21 株式会社日立製作所 半導体装置の製造方法
US20030037801A1 (en) * 2001-08-27 2003-02-27 Applied Materials, Inc. Method for increasing the efficiency of substrate processing chamber contamination detection
JP2003197609A (ja) * 2001-12-27 2003-07-11 Tokyo Electron Ltd プラズマ処理装置の監視方法及びプラズマ処理装置
JP3905466B2 (ja) * 2002-12-05 2007-04-18 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2006524914A (ja) * 2003-03-31 2006-11-02 東京エレクトロン株式会社 プラズマ処理システム及び方法
KR100976648B1 (ko) * 2003-05-16 2010-08-18 도쿄엘렉트론가부시키가이샤 헬스 인덱스 처리 시스템 및 이를 이용한 방법
JP4754196B2 (ja) * 2003-08-25 2011-08-24 東京エレクトロン株式会社 減圧処理室内の部材清浄化方法および基板処理装置
JP4448335B2 (ja) * 2004-01-08 2010-04-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR100672820B1 (ko) * 2004-11-12 2007-01-22 삼성전자주식회사 플라즈마를 사용한 피처리체의 처리 방법
JP4979389B2 (ja) * 2004-12-17 2012-07-18 東京エレクトロン株式会社 プラズマ処理装置
JP2006216710A (ja) * 2005-02-02 2006-08-17 Hitachi High-Technologies Corp 半導体製造装置
JP2007073751A (ja) * 2005-09-07 2007-03-22 Hitachi High-Technologies Corp プラズマ処理装置および処理方法
JP5121698B2 (ja) * 2006-03-06 2013-01-16 東京エレクトロン株式会社 プラズマ処理装置
JP4674177B2 (ja) * 2006-03-15 2011-04-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4914119B2 (ja) * 2006-05-31 2012-04-11 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US7799138B2 (en) * 2006-06-22 2010-09-21 Hitachi Global Storage Technologies Netherlands In-situ method to reduce particle contamination in a vacuum plasma processing tool
US8075952B2 (en) * 2006-06-29 2011-12-13 Applied Materials, Inc. Power loading substrates to reduce particle contamination
US20080142481A1 (en) * 2006-12-18 2008-06-19 White John M In-situ particle collector
JP5010414B2 (ja) * 2007-09-26 2012-08-29 東京エレクトロン株式会社 基板処理システム，基板処理装置の制御方法，およびプログラム
US8101510B2 (en) * 2009-04-03 2012-01-24 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050087136A1 (en) * 2003-10-08 2005-04-28 Tokyo Electron Limited Particle sticking prevention apparatus and plasma processing apparatus
US20090028672A1 (en) * 2007-07-26 2009-01-29 Tokyo Electron Limited Substrate transfer module and substrate processing system

Also Published As

Publication number Publication date
CN102136412A (zh) 2011-07-27
JP2011134927A (ja) 2011-07-07
JP5397215B2 (ja) 2014-01-22
KR20110074665A (ko) 2011-07-01
CN102136412B (zh) 2014-10-08
US20110160889A1 (en) 2011-06-30
TW201126599A (en) 2011-08-01
US8649893B2 (en) 2014-02-11

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