JP5397152B2 - ポジ型感放射線性組成物、層間絶縁膜及びその形成方法 - Google Patents

ポジ型感放射線性組成物、層間絶縁膜及びその形成方法 Download PDF

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JP5397152B2
JP5397152B2 JP2009243920A JP2009243920A JP5397152B2 JP 5397152 B2 JP5397152 B2 JP 5397152B2 JP 2009243920 A JP2009243920 A JP 2009243920A JP 2009243920 A JP2009243920 A JP 2009243920A JP 5397152 B2 JP5397152 B2 JP 5397152B2
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Japan
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ether
solvent
dimethylbutyl
mass
positive
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JP2009243920A
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English (en)
Japanese (ja)
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JP2011090164A (ja
Inventor
大吾 一戸
政暁 花村
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JSR Corp
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JSR Corp
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Priority to JP2009243920A priority Critical patent/JP5397152B2/ja
Priority to KR1020100101781A priority patent/KR20110044147A/ko
Priority to CN2010105225569A priority patent/CN102043339A/zh
Publication of JP2011090164A publication Critical patent/JP2011090164A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0223—Iminoquinonediazides; Para-quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
JP2009243920A 2009-10-22 2009-10-22 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法 Active JP5397152B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009243920A JP5397152B2 (ja) 2009-10-22 2009-10-22 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
KR1020100101781A KR20110044147A (ko) 2009-10-22 2010-10-19 포지티브형 감방사선성 수지 조성물, 및 층간 절연막 및 그 형성 방법
CN2010105225569A CN102043339A (zh) 2009-10-22 2010-10-20 正型放射线敏感性组合物、层间绝缘膜及其形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009243920A JP5397152B2 (ja) 2009-10-22 2009-10-22 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法

Publications (2)

Publication Number Publication Date
JP2011090164A JP2011090164A (ja) 2011-05-06
JP5397152B2 true JP5397152B2 (ja) 2014-01-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009243920A Active JP5397152B2 (ja) 2009-10-22 2009-10-22 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法

Country Status (3)

Country Link
JP (1) JP5397152B2 (zh)
KR (1) KR20110044147A (zh)
CN (1) CN102043339A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6098635B2 (ja) * 2012-03-09 2017-03-22 旭硝子株式会社 ポジ型感光性樹脂組成物、隔壁及び光学素子
JP2014071373A (ja) * 2012-09-28 2014-04-21 Asahi Kasei E-Materials Corp 感光性樹脂組成物
JP2018028630A (ja) * 2016-08-19 2018-02-22 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ブラックマトリックス用組成物、およびそれを用いたブラックマトリックスの製造方法
JP7111115B2 (ja) * 2018-02-05 2022-08-02 Jsr株式会社 半導体リソグラフィープロセス用膜形成組成物、ケイ素含有膜及びレジストパターン形成方法
JP6639724B1 (ja) * 2019-03-15 2020-02-05 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ポジ型感光性ポリシロキサン組成物
WO2020196601A1 (ja) * 2019-03-26 2020-10-01 東レ株式会社 ポジ型感光性樹脂組成物、その硬化膜およびそれを具備する光学デバイス

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4586703B2 (ja) * 2004-10-14 2010-11-24 住友化学株式会社 感放射線性樹脂組成物
EP1662322B1 (en) * 2004-11-26 2017-01-11 Toray Industries, Inc. Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film
JP4771083B2 (ja) * 2005-11-29 2011-09-14 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
WO2008038550A1 (fr) * 2006-09-25 2008-04-03 Hitachi Chemical Company, Ltd. Composition sensible au rayonnement, procédé de formation d'un film de protection à base de silice, film de protection à base de silice, appareil et élément comportant un film de protection à base de silice et agent photosensibilisant destiné à isoler un film
JP2008102429A (ja) * 2006-10-20 2008-05-01 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法およびネガ型レジスト組成物
JP5240459B2 (ja) * 2008-02-19 2013-07-17 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズならびにそれらの形成方法
JP5182365B2 (ja) * 2008-03-31 2013-04-17 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物、マイクロレンズおよびマイクロレンズの形成方法

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KR20110044147A (ko) 2011-04-28
CN102043339A (zh) 2011-05-04
JP2011090164A (ja) 2011-05-06

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