JP5393251B2 - 光電変換装置、及び当該光電変換装置を具備する電子機器 - Google Patents

光電変換装置、及び当該光電変換装置を具備する電子機器 Download PDF

Info

Publication number
JP5393251B2
JP5393251B2 JP2009118359A JP2009118359A JP5393251B2 JP 5393251 B2 JP5393251 B2 JP 5393251B2 JP 2009118359 A JP2009118359 A JP 2009118359A JP 2009118359 A JP2009118359 A JP 2009118359A JP 5393251 B2 JP5393251 B2 JP 5393251B2
Authority
JP
Japan
Prior art keywords
terminal
photoelectric conversion
electrically connected
circuit
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009118359A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010004026A5 (enExample
JP2010004026A (ja
Inventor
潤 小山
篤志 広瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009118359A priority Critical patent/JP5393251B2/ja
Publication of JP2010004026A publication Critical patent/JP2010004026A/ja
Publication of JP2010004026A5 publication Critical patent/JP2010004026A5/ja
Application granted granted Critical
Publication of JP5393251B2 publication Critical patent/JP5393251B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Amplifiers (AREA)
JP2009118359A 2008-05-22 2009-05-15 光電変換装置、及び当該光電変換装置を具備する電子機器 Expired - Fee Related JP5393251B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009118359A JP5393251B2 (ja) 2008-05-22 2009-05-15 光電変換装置、及び当該光電変換装置を具備する電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008134663 2008-05-22
JP2008134663 2008-05-22
JP2009118359A JP5393251B2 (ja) 2008-05-22 2009-05-15 光電変換装置、及び当該光電変換装置を具備する電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013214516A Division JP5679487B2 (ja) 2008-05-22 2013-10-15 光電変換装置

Publications (3)

Publication Number Publication Date
JP2010004026A JP2010004026A (ja) 2010-01-07
JP2010004026A5 JP2010004026A5 (enExample) 2012-05-17
JP5393251B2 true JP5393251B2 (ja) 2014-01-22

Family

ID=41341381

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009118359A Expired - Fee Related JP5393251B2 (ja) 2008-05-22 2009-05-15 光電変換装置、及び当該光電変換装置を具備する電子機器
JP2013214516A Expired - Fee Related JP5679487B2 (ja) 2008-05-22 2013-10-15 光電変換装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013214516A Expired - Fee Related JP5679487B2 (ja) 2008-05-22 2013-10-15 光電変換装置

Country Status (2)

Country Link
US (1) US8053717B2 (enExample)
JP (2) JP5393251B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014017522A (ja) * 2008-05-22 2014-01-30 Semiconductor Energy Lab Co Ltd 電子機器

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7923800B2 (en) * 2006-12-27 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102162746B1 (ko) 2009-10-21 2020-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
CN101938255B (zh) * 2010-09-16 2012-09-05 中国电子科技集团公司第二十四研究所 低于100mW低功耗真对数放大器
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
CN103475318B (zh) * 2013-09-13 2016-06-08 天津市畅悦电子科技有限公司 一种用于测光系统中的光电信号放大电路
CN106153083A (zh) * 2016-06-27 2016-11-23 北京交通大学 基于电子设备制作便携式精密测试仪器的方法及装置
CN106125812B (zh) * 2016-06-29 2017-10-31 中国科学院深圳先进技术研究院 用于pet探测器光电放大器的温漂补偿方法和系统

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196746A (ja) * 1992-12-25 1994-07-15 Canon Inc 光電変換装置、駆動回路、半導体発光素子駆動回路、記憶装置、及びシーケンシャルアクセスメモリー
JP2599429Y2 (ja) * 1993-12-24 1999-09-06 新日本無線株式会社 光電変換回路
JPH08125524A (ja) * 1994-10-24 1996-05-17 Mitsubishi Electric Corp 出力回路及び入力回路
JP3309629B2 (ja) * 1995-03-06 2002-07-29 トヨタ自動車株式会社 プッシュプル出力回路
JPH08340128A (ja) * 1995-06-13 1996-12-24 Olympus Optical Co Ltd 光電変換回路
JP3444093B2 (ja) 1996-06-10 2003-09-08 株式会社デンソー 光センサ回路
JPH10200342A (ja) * 1997-01-07 1998-07-31 Nec Corp バイアス電圧供給回路
JP3280616B2 (ja) * 1998-02-20 2002-05-13 キヤノン株式会社 光電変換装置
JP2000058901A (ja) * 1998-07-31 2000-02-25 Sharp Corp 電流電圧変換増幅回路
JP2002094334A (ja) 2000-09-12 2002-03-29 Canon Inc 温度特性補正回路及び半導体集積回路
JP3805689B2 (ja) * 2002-01-25 2006-08-02 シャープ株式会社 光電共用伝送装置、光伝送装置およびそれを用いる電子機器
JP4086514B2 (ja) * 2002-02-13 2008-05-14 キヤノン株式会社 光電変換装置及び撮像装置
ATE306745T1 (de) * 2003-03-10 2005-10-15 Suisse Electronique Microtech Elektrische schaltung, verfahren und vorrichtung zur demodulation eines intensitätsmodulierten signals
JP4152797B2 (ja) * 2003-04-14 2008-09-17 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
JP2005129909A (ja) 2003-09-19 2005-05-19 Semiconductor Energy Lab Co Ltd 光センサー装置および電子機器
US7253391B2 (en) 2003-09-19 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Optical sensor device and electronic apparatus
JP2005175418A (ja) * 2003-11-19 2005-06-30 Canon Inc 光電変換装置
JP2006294682A (ja) 2005-04-06 2006-10-26 Sharp Corp 光電変換装置および電子機器
JP4878005B2 (ja) * 2006-05-30 2012-02-15 株式会社半導体エネルギー研究所 半導体装置及びそれを用いた電子機器
JP2008241518A (ja) * 2007-03-28 2008-10-09 Seiko Npc Corp 電流電圧変換回路およびこれを用いた自動調光装置
US8053717B2 (en) * 2008-05-22 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device having a reference voltage generation circuit with a resistor and a second diode element and electronic device having the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014017522A (ja) * 2008-05-22 2014-01-30 Semiconductor Energy Lab Co Ltd 電子機器

Also Published As

Publication number Publication date
US20090289173A1 (en) 2009-11-26
JP2010004026A (ja) 2010-01-07
JP5679487B2 (ja) 2015-03-04
JP2014017522A (ja) 2014-01-30
US8053717B2 (en) 2011-11-08

Similar Documents

Publication Publication Date Title
JP5679487B2 (ja) 光電変換装置
JP5587558B2 (ja) 光電変換装置
JP5222649B2 (ja) 光電変換装置及びその光電変換装置を具備する電子機器
CN101082521B (zh) 半导体装置以及使用该半导体装置的电子设备
CN101233394B (zh) 半导体装置
JP6562973B2 (ja) 測定装置
US8106474B2 (en) Semiconductor device
JP5667273B2 (ja) 光電変換装置
US8431883B2 (en) Photoelectric conversion device comprising a current mirror circuit connected to a field effect transistor, a buffer and a voltage detection circuit
JP2010004025A (ja) 光電変換装置、及び当該光電変換装置の駆動方法、並びに当該光電変換装置を具備する電子機器
US8502131B2 (en) Color sensor and electronic device having the same
JP4878005B2 (ja) 半導体装置及びそれを用いた電子機器
JP2006352098A (ja) 光電変換装置及びその作製方法、並びに半導体装置
JP2007059889A (ja) 半導体装置
US7679091B2 (en) Photoelectric conversion element having a semiconductor and semiconductor device using the same
JP5132443B2 (ja) 光電変換装置、並びに当該光電変換装置を具備するフォトｉｃ及び電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120326

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120326

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130612

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130625

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130731

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131008

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131015

R150 Certificate of patent or registration of utility model

Ref document number: 5393251

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees