JP5385537B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP5385537B2 JP5385537B2 JP2008044327A JP2008044327A JP5385537B2 JP 5385537 B2 JP5385537 B2 JP 5385537B2 JP 2008044327 A JP2008044327 A JP 2008044327A JP 2008044327 A JP2008044327 A JP 2008044327A JP 5385537 B2 JP5385537 B2 JP 5385537B2
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- 239000000758 substrate Substances 0.000 title claims description 221
- 238000012545 processing Methods 0.000 title claims description 120
- 230000007246 mechanism Effects 0.000 claims description 108
- 238000003825 pressing Methods 0.000 claims description 98
- 238000004140 cleaning Methods 0.000 claims description 37
- 230000009471 action Effects 0.000 claims description 24
- 230000005540 biological transmission Effects 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 31
- 239000007788 liquid Substances 0.000 description 21
- 239000000126 substance Substances 0.000 description 21
- 230000002093 peripheral effect Effects 0.000 description 17
- 239000000243 solution Substances 0.000 description 12
- 102100030373 HSPB1-associated protein 1 Human genes 0.000 description 10
- 101000843045 Homo sapiens HSPB1-associated protein 1 Proteins 0.000 description 10
- 239000011553 magnetic fluid Substances 0.000 description 8
- 238000012856 packing Methods 0.000 description 7
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning In General (AREA)
Description
請求項3記載の発明は、前記シーソー部材が、鉛直面に沿って揺動するように、前記支持部材に支持されており、前記押圧用アクチュエータが、前記シーソー部材の前記力点部の下方から駆動力を与えるように配置されている、請求項1または2記載の基板処理装置である。
20 ブラシ
45 回転シャフト(シャフト)
79 第1リニアガイド機構(ガイド機構)
82 ブラケット(伝達部材)
83 水平板(被作用点部)
90 支持部材
91 シーソー部材
92 押圧用アクチュエータ
93 支点軸(支点)
95 貫通孔(肉抜き部)
96 力点部
97 作用点部
150 モータ(回転用アクチュエータ)
W 基板
Claims (7)
- 基板を洗浄するためのブラシと、
支持部材を支点として揺動可能であって、前記支点に対して一方側に力点部を有し、前記支点に対して他方側に作用点部を有するシーソー部材と、
前記シーソー部材の力点部に駆動力を与えることにより、当該シーソー部材を前記支点を中心に揺動させる押圧用アクチュエータと、
その下端部に前記ブラシが結合されたシャフトと、
鉛直方向に移動可能であり、前記シーソー部材の前記作用点部から駆動力を受け、当該駆動力を前記ブラシを基板に押し付けるための押し付け力として前記シャフトに伝達する伝達部材と、
前記伝達部材と共に鉛直方向に移動する延設部と、
前記シーソー部材から前記伝達部材に駆動力が付与されていない状態において、前記延設部から鉛直方向に前記ブラシと基板との鉛直方向の間隔よりも長い所定距離だけ離隔して位置する圧力センサとを含み、
前記圧力センサは、前記延設部が前記所定距離以上、鉛直方向に移動すると、前記延設部に当接してエラーとして検出する、基板処理装置。 - 前記ブラシと前記シャフトの自重を相殺する弾性反力により当該ブラシと前記シャフトとを弾性的に支持するばね部材をさらに含む、請求項1記載の基板処理装置。
- 前記シーソー部材が、鉛直面に沿って揺動するように、前記支持部材に支持されており、
前記押圧用アクチュエータが、前記シーソー部材の前記力点部の下方から駆動力を与えるように配置されている、請求項1または2記載の基板処理装置。 - 前記シャフトの側方に配置され、前記シャフトを当該シャフトの軸方向に案内するガイド機構を含む、請求項1〜3のいずれか一項に記載の基板処理装置。
- 前記シャフトの側方に配置され、前記シャフトおよびブラシを一体的に回転させる回転用アクチュエータをさらに含む、請求項1〜4のいずれか一項に記載の基板処理装置。
- 前記シーソー部材が、肉抜き部を有するものである、請求項1〜5のいずれか一項に記載の基板処理装置。
- 前記力点部と前記支点との距離が、前記作用点部と前記支点との距離とは異なっている、請求項1〜6のいずれか一項に記載の基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008044327A JP5385537B2 (ja) | 2008-02-26 | 2008-02-26 | 基板処理装置 |
US12/359,756 US8316497B2 (en) | 2008-02-26 | 2009-01-26 | Substrate processing apparatus |
KR1020090006679A KR101036739B1 (ko) | 2008-02-26 | 2009-01-28 | 기판처리장치 |
TW098104164A TWI381474B (zh) | 2008-02-26 | 2009-02-10 | 基板處理裝置 |
CN2009100077695A CN101521148B (zh) | 2008-02-26 | 2009-02-24 | 基板处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008044327A JP5385537B2 (ja) | 2008-02-26 | 2008-02-26 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009206139A JP2009206139A (ja) | 2009-09-10 |
JP5385537B2 true JP5385537B2 (ja) | 2014-01-08 |
Family
ID=40996873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008044327A Active JP5385537B2 (ja) | 2008-02-26 | 2008-02-26 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8316497B2 (ja) |
JP (1) | JP5385537B2 (ja) |
KR (1) | KR101036739B1 (ja) |
CN (1) | CN101521148B (ja) |
TW (1) | TWI381474B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130092186A1 (en) * | 2011-10-18 | 2013-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Removal of particles on back side of wafer |
US20130111678A1 (en) * | 2011-11-08 | 2013-05-09 | Applied Materials, Inc. | Brush box module for chemical mechanical polishing cleaner |
JP6045869B2 (ja) * | 2012-10-01 | 2016-12-14 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
US20140310895A1 (en) * | 2013-04-19 | 2014-10-23 | Applied Materials, Inc. | Scrubber brush force control assemblies, apparatus and methods for chemical mechanical polishing |
SG10201404086XA (en) | 2013-07-19 | 2015-02-27 | Ebara Corp | Substrate cleaning device, substrate cleaning apparatus, method for manufacturing cleaned substrate and substrate processing apparatus |
JP6345393B2 (ja) * | 2013-07-19 | 2018-06-20 | 株式会社荏原製作所 | 基板洗浄装置および基板洗浄方法 |
CN105013729B (zh) * | 2015-08-06 | 2017-03-08 | 深圳市方泰设备技术有限公司 | 一种清洁胶纸平衡机构 |
CN107452643B (zh) * | 2016-05-31 | 2020-11-13 | 弘塑科技股份有限公司 | 基板压平设备与使用所述基板压平设备的半导体制造方法 |
JP6887280B2 (ja) * | 2017-03-27 | 2021-06-16 | 株式会社Screenホールディングス | 基板処理装置、基板処理方法およびプログラム記録媒体 |
JP6945318B2 (ja) * | 2017-03-27 | 2021-10-06 | 株式会社Screenホールディングス | 基板洗浄方法、基板洗浄装置およびプログラム記録媒体 |
CN113118088A (zh) * | 2019-12-31 | 2021-07-16 | 盛美半导体设备(上海)股份有限公司 | 半导体清洗装置及其刷头压力反馈调节机构 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2660248B2 (ja) * | 1988-01-06 | 1997-10-08 | 株式会社 半導体エネルギー研究所 | 光を用いた膜形成方法 |
JP2746670B2 (ja) * | 1989-07-20 | 1998-05-06 | 東京エレクトロン株式会社 | 洗浄装置 |
US5144711A (en) * | 1991-03-25 | 1992-09-08 | Westech Systems, Inc. | Cleaning brush for semiconductor wafer |
JP2887197B2 (ja) | 1994-09-20 | 1999-04-26 | 大日本スクリーン製造株式会社 | 回転式基板洗浄装置 |
KR0171491B1 (ko) * | 1994-09-20 | 1999-03-30 | 이시다 아키라 | 회전식 기판세정장치 |
JPH10189512A (ja) * | 1996-12-26 | 1998-07-21 | Sony Corp | 基板洗浄装置 |
JPH10242093A (ja) * | 1997-02-27 | 1998-09-11 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置 |
JPH1158202A (ja) | 1997-08-26 | 1999-03-02 | Fuji Oozx Inc | 電気鍛縮機における上部電極の研磨装置 |
US6647579B2 (en) * | 2000-12-18 | 2003-11-18 | International Business Machines Corp. | Brush pressure control system for chemical and mechanical treatment of semiconductor surfaces |
JP4555843B2 (ja) * | 2007-07-30 | 2010-10-06 | Okiセミコンダクタ株式会社 | 基板洗浄方法 |
-
2008
- 2008-02-26 JP JP2008044327A patent/JP5385537B2/ja active Active
-
2009
- 2009-01-26 US US12/359,756 patent/US8316497B2/en active Active
- 2009-01-28 KR KR1020090006679A patent/KR101036739B1/ko active IP Right Grant
- 2009-02-10 TW TW098104164A patent/TWI381474B/zh active
- 2009-02-24 CN CN2009100077695A patent/CN101521148B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR101036739B1 (ko) | 2011-05-24 |
CN101521148A (zh) | 2009-09-02 |
KR20090092222A (ko) | 2009-08-31 |
JP2009206139A (ja) | 2009-09-10 |
TWI381474B (zh) | 2013-01-01 |
US20090211040A1 (en) | 2009-08-27 |
US8316497B2 (en) | 2012-11-27 |
CN101521148B (zh) | 2010-12-22 |
TW200945476A (en) | 2009-11-01 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |