JP5383113B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5383113B2
JP5383113B2 JP2008203906A JP2008203906A JP5383113B2 JP 5383113 B2 JP5383113 B2 JP 5383113B2 JP 2008203906 A JP2008203906 A JP 2008203906A JP 2008203906 A JP2008203906 A JP 2008203906A JP 5383113 B2 JP5383113 B2 JP 5383113B2
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JP
Japan
Prior art keywords
laser
phase shift
shift mask
film
semiconductor film
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2008203906A
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English (en)
Japanese (ja)
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JP2009065138A5 (https=
JP2009065138A (ja
Inventor
秀和 宮入
純平 桃
史人 井坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008203906A priority Critical patent/JP5383113B2/ja
Publication of JP2009065138A publication Critical patent/JP2009065138A/ja
Publication of JP2009065138A5 publication Critical patent/JP2009065138A5/ja
Application granted granted Critical
Publication of JP5383113B2 publication Critical patent/JP5383113B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2008203906A 2007-08-16 2008-08-07 半導体装置の作製方法 Expired - Fee Related JP5383113B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008203906A JP5383113B2 (ja) 2007-08-16 2008-08-07 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007212046 2007-08-16
JP2007212046 2007-08-16
JP2008203906A JP5383113B2 (ja) 2007-08-16 2008-08-07 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009065138A JP2009065138A (ja) 2009-03-26
JP2009065138A5 JP2009065138A5 (https=) 2011-07-28
JP5383113B2 true JP5383113B2 (ja) 2014-01-08

Family

ID=40362931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008203906A Expired - Fee Related JP5383113B2 (ja) 2007-08-16 2008-08-07 半導体装置の作製方法

Country Status (3)

Country Link
US (1) US20090046757A1 (https=)
JP (1) JP5383113B2 (https=)
KR (1) KR101541701B1 (https=)

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KR101041137B1 (ko) * 2009-03-25 2011-06-13 삼성모바일디스플레이주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법
ES2398787B1 (es) * 2010-12-16 2014-02-18 BSH Electrodomésticos España S.A. Procedimiento para fabricar una placa de campo de cocción para un campo de cocción
FR2974183B1 (fr) * 2011-04-13 2013-12-13 Proton World Int Nv Dispositif de perturbation du fonctionnement d'un circuit integre.
WO2012164626A1 (ja) * 2011-06-02 2012-12-06 パナソニック株式会社 薄膜半導体装置の製造方法、薄膜半導体アレイ基板の製造方法、結晶性シリコン薄膜の形成方法、及び結晶性シリコン薄膜の形成装置
CN103189990A (zh) * 2011-10-28 2013-07-03 松下电器产业株式会社 薄膜半导体器件及其制造方法
KR102388723B1 (ko) * 2015-08-07 2022-04-21 삼성디스플레이 주식회사 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
DE102015216342B3 (de) * 2015-08-26 2016-12-22 Laser-Laboratorium Göttingen e.V. Technik zur Herstellung periodischer Strukturen
KR102467462B1 (ko) * 2017-12-05 2022-11-16 삼성디스플레이 주식회사 레이저 결정화 장치

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Also Published As

Publication number Publication date
KR20090017989A (ko) 2009-02-19
KR101541701B1 (ko) 2015-08-04
US20090046757A1 (en) 2009-02-19
JP2009065138A (ja) 2009-03-26

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