JP5373619B2 - キャパシタとそれを有する半導体装置およびキャパシタの製造方法 - Google Patents
キャパシタとそれを有する半導体装置およびキャパシタの製造方法 Download PDFInfo
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- JP5373619B2 JP5373619B2 JP2009539065A JP2009539065A JP5373619B2 JP 5373619 B2 JP5373619 B2 JP 5373619B2 JP 2009539065 A JP2009539065 A JP 2009539065A JP 2009539065 A JP2009539065 A JP 2009539065A JP 5373619 B2 JP5373619 B2 JP 5373619B2
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- tin
- lower electrode
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- 239000003990 capacitor Substances 0.000 title claims abstract description 113
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000000203 mixture Substances 0.000 claims abstract description 72
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 40
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 30
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 229910052718 tin Inorganic materials 0.000 claims description 82
- 229910016909 AlxOy Inorganic materials 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 18
- 239000002131 composite material Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910052741 iridium Inorganic materials 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 11
- 238000005121 nitriding Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 336
- 238000000137 annealing Methods 0.000 description 41
- 230000000694 effects Effects 0.000 description 40
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 29
- 239000001301 oxygen Substances 0.000 description 29
- 239000010410 layer Substances 0.000 description 25
- 229910021332 silicide Inorganic materials 0.000 description 23
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 23
- 230000003647 oxidation Effects 0.000 description 21
- 238000007254 oxidation reaction Methods 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 230000006866 deterioration Effects 0.000 description 11
- 229910007875 ZrAlO Inorganic materials 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000002484 cyclic voltammetry Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- -1 zircon aluminate Chemical class 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- BLOIXGFLXPCOGW-UHFFFAOYSA-N [Ti].[Sn] Chemical compound [Ti].[Sn] BLOIXGFLXPCOGW-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
2 素子分離領域
3 ゲート酸化膜
4 ゲート電極
5 n型拡散領域
6 第1層間絶縁膜
7 コンタクトホール
8 TiN膜
9 W膜
10 メモリセル選択用トランジスタ
11 容量コンタクト
12 ビットコンタクト
13 ストッパー絶縁膜
14 第2層間絶縁膜
15 シリンダ溝
16 下部電極(TiN膜)
17 容量絶縁膜
18 上部電極(TiN膜)
19 MIM構造のキャパシタ
20 容量用配線
21 開口部
22 第3層間絶縁膜
23 コンタクトホール
24 TiN膜
25 ビット配線
26、29 多結晶シリコン層
27 タングステン層
28、30、31 金属シリサイド層
101 TiN膜
102 Ru膜
103 下部電極
104 容量絶縁膜
105 上部電極
106 シリコン基板(第1の電極)
107 自然酸化膜
108 容量絶縁膜
109 第2の電極
201 TiN膜
202 酸化したTiN膜
203 下部電極
204 容量絶縁膜
205 上部電極
301 シリコン基板
302 TiN膜
303 Ru膜
304 下部電極
305 Zr(1-x)AlxOy膜
306 上部電極
401 TiN膜
402 Ru膜
図12は、本発明の実施例1に関わるキャパシタ構造を示した図である。シリコン基板301にTiN膜302を20nmの膜厚に堆積した後、Ru膜303を1nm〜10nmの膜厚に堆積して下部電極304を形成する。TiN膜およびRu膜は、スパッタリング法、化学気相成長もしくはALD法により形成することができる。次に、RuとTiNの積層構造を有するシリコン基板301に、金属酸化物層としてZr(1-x)AlyOz 305を化学気相成長法もしくは原子層堆積法により2nm〜20nmの範囲で形成した。基板温度は300℃とし、有機金属原料としてトリメチルアルミニウム(Al(CH3)3)およびテトラキスジエチルアミノジルコニウム〔Zr(NEt2) 4:Zr[N(C2H5) 2]4〕を用い、酸化剤としてH2Oを使用した。成膜方法は、導入する酸化剤の分圧を制御することにより設定可能であり、酸化剤の分圧が高い場合は、CVD法、低い場合はALD法となる。また、金属原料ガスと酸化剤を同時に供給した場合は、CVD法により膜を形成することができる。図13に本実施形態における原料ガスの供給工程の概略を示す。本発明における原料ガスの供給工程は、図13に示されるように、ZrとAlの金属酸化物層(以下ZrAlO膜と記載)の形成工程とZrO2膜の形成工程からなっている。ZrAlO膜の形成工程は、まず基板上に酸化剤であるH2Oを供給する。H2Oは、マスフローコントローラによって流量5sccmを2sec供給する。ここで、ccmはcc(cm3)/min、即ち1分間あたりの流量を規定する単位であり、sccmはstandard cc/min、即ち1atm、0℃で規格化されたccmである。
本発明の実施例2では、実施例1と同様の工程にて、電極上にAl組成0≦x≦0.40の範囲のZr(1-x)AlxOy膜を2nm〜20nmの範囲で成膜し、窒素雰囲気中で400℃および600℃の温度において、10minのアニール処理を行った。そして、Zr(1-x)AlxOy膜上に真空蒸着法によりAuを100nmの膜厚で堆積し、キャパシタを形成した。ここで、RuとTiNの積層電極を第1の電極、Auを第2の電極とする。
図15A(a)〜図15E(k)は、本発明の実施例3である半導体装置の製造方法を工程順に示した断面図である。図15A(a)に示すように、p型シリコン基板1の表面領域にLOCOS(Local Oxidation of Silicon)法あるいはSTI(Shallow Trench Isolation)法により素子分離領域2を形成した。次に、素子分離領域2により囲まれた活性領域にシリコン酸化膜および多結晶シリコン膜を順次に成膜し、これらの積層膜をフォトリソグラフィ技術およびRIE(Reactive Ion Etching)技術を用いて所望の形状に加工してゲート酸化膜3およびゲート電極4を形成する。次に、ゲート酸化膜3およびゲート電極4をマスクとしてイオン注入を行い、n型不純物をp型シリコン基板1に導入して、ソース領域またはドレイン領域となる複数のn型拡散領域5を自己整合的に形成する。これにより、MOS型トランジスタからなるメモリ選択用トランジスタ10が形成される。ここで、上述のソース領域またはドレイン領域を構成するn型拡散領域5は、高不純物領域と低不純物領域とを組み合わせたLDD(Lightly Doped Drain)構造になっていても、高不純物濃度領域の非LDD構造になっていてもよい。また、ソース・ドレイン領域にサリサイド法によりシリサイド層を形成してもよい。このとき、シリサイド層はコンタクト抵抗の観点から、Niシリサイド、CoシリサイドあるいはTiシリサイドを用いてもよい。
図16は、本発明の実施例4の半導体装置を示す断面図である。本実施例4は、トランジスタのゲート電極が、n型不純物を含有する多結晶シリコン層26とタングステン層27から形成されている点で、実施例3と異なる。ゲート電極形成以降の工程は、実施例3の場合と同様である。
図17は、本発明の実施例5の半導体装置を示す断面図である。本実施例は、実施例3および実施例4におけるトランジスタのソース・ドレイン拡散領域の一部に、ニッケルシリサイド層28を用い、ゲート電極をリン、ヒ素等のn型不純物を含有する多結晶シリコン層29とニッケルシリサイドからなる金属シリサイド層30から形成する点で、実施例3および実施例4と異なる。ゲート電極形成以降の工程は、誘電体膜のアニール温度が異なる点以外は実施例3の場合と同様である。ここで、誘電体膜のアニール工程は、窒素雰囲気中で、400℃、10minの処理を行った。
図18は、本発明の実施例6の半導体装置を示す断面図である。本実施例6は、実施例5におけるトランジスタのゲート電極をNiシリサイドからなる金属シリサイド層31から形成する点で、実施例5と異なる。ゲート電極形成以降の工程は実施例5と同一である。
Claims (16)
- 容量絶縁膜の上下面にそれぞれ上部電極および下部電極が形成されてなるキャパシタであって、前記容量絶縁膜は、ZrとAlとOとを主成分とし、ZrとAlの組成比が(1−x):x(0.01≦x≦0.15)であり、かつ結晶構造を有する誘電体からなり、前記下部電極が、TiN膜と、Ru膜、Pt膜およびIr膜から選択されるいずれかの膜との積層構造からなり、かつ前記Ru膜もしくは前記Pt膜もしくは前記Ir膜が前記容量絶縁膜と接しており、
前記誘電体の組成は、Zr(1−x)AlxOy(0.02≦x≦0.05、1≦y≦2−0.5x)であることを特徴とするキャパシタ。 - 容量絶縁膜の上下面にそれぞれ上部電極および下部電極が形成されてなるキャパシタであって、前記容量絶縁膜は、ZrとAlとOとを主成分とし、ZrとAlの組成比が(1−x):x(0.01≦x≦0.15)であり、かつ比誘電率が40以上70以下の誘電体からなり、前記下部電極が、TiN膜と、Ru膜、Pt膜およびIr膜から選択されるいずれかの膜との積層構造からなり、かつ前記Ru膜もしくは前記Pt膜もしくは前記Ir膜が前記容量絶縁膜と接していることを特徴とするキャパシタ。
- 前記下部電極を構成する前記Ru膜、前記Pt膜および前記Ir膜から選択されるいずれかの膜が、1nm以上20nm以下の膜厚を有することを特徴とする請求項1または2に記載のキャパシタ。
- 前記誘電体の組成は、Zr(1−x)AlxOy(0.01≦x≦0.15、1≦y≦2−0.5x)であることを特徴とする請求項2又は3に記載のキャパシタ。
- 前記誘電体の組成は、Zr(1−x)AlxOy(0.01≦x≦0.10、1≦y≦2−0.5x)であることを特徴とする請求項2又は3に記載のキャパシタ。
- 前記誘電体の組成は、Zr(1−x)AlxOy(0.02≦x≦0.05、1≦y≦2−0.5x)であることを特徴とする請求項2又は3に記載のキャパシタ。
- 前記上部電極は、TiN、Ti、WN、W、Pt、Ir、Ruからなる群から選択される金属または金属窒化物の少なくとも一つからなることを特徴とする請求項1から6のいずれか一項に記載のキャパシタ。
- 前記下部電極と前記容量絶縁膜と前記上部電極との3層構造が、部分的に他の部分と異なる面上に形成されていることを特徴とする請求項1から7のいずれか一項に記載のキャパシタ。
- 前記3層構造が、部分的に他の部分と直交していることを特徴とする請求項8に記載のキャパシタ。
- 少なくとも部分的に筒型構造を有することを特徴とする請求項1から7のいずれか一項に記載のキャパシタ。
- 請求項1から10のいずれか一項に記載されたキャパシタが、少なくとも表面が半導体で構成された半導体基板上に形成されていることを特徴とする半導体装置。
- 前記キャパシタと、前記半導体基板上に形成されたスイッチング素子とが電気的に接続されていることを特徴とする請求項11に記載の半導体装置。
- TiN膜を形成する工程と、前記TiN膜上にRu膜、Pt膜およびIr膜から選択されるいずれかの膜を堆積して下部電極を形成する工程と、前記下部電極上に、ZrとAlとOとを主成分とし、ZrとAlの組成比が(1−x):x(0.01≦x≦0.15)である複合酸化物膜を形成する工程と、熱処理を行って前記複合酸化物膜を結晶化させる工程と、を有し、
前記複合酸化物膜のZrとAlの組成比が(1−x):x(0.02≦x≦0.05)であって、前記熱処理が400℃以下の温度で行なわれることを特徴とするキャパシタの製造方法。 - 前記TiN膜を形成する工程の後、前記TiN膜上に前記Ru膜、前記Pt膜および前記Ir膜から選択されるいずれかの膜を堆積する前に、ラジカル窒化処理を行うことを特徴とする請求項13に記載のキャパシタの製造方法。
- 前記複合酸化物膜を形成する工程が、Zrを含む原料とAlを含む原料とを同時に供給してZrとAlとを含む酸化物膜を形成する工程を1回、Zrを含む原料供給してZrを含む酸化物膜を形成する工程をN(Nは1以上の整数)回行なうプロセスを1セットとして、前記プロセスをM(Mは1以上の整数)セット行なうことであることを特徴とする請求項13又は14に記載のキャパシタの製造方法。
- 前記熱処理が300℃から400℃の温度範囲で行なわれることを特徴とする請求項13から15のいずれか一項に記載のキャパシタの製造方法。
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