JP5373094B2 - ネオペンタシランの製造方法 - Google Patents
ネオペンタシランの製造方法 Download PDFInfo
- Publication number
- JP5373094B2 JP5373094B2 JP2011531450A JP2011531450A JP5373094B2 JP 5373094 B2 JP5373094 B2 JP 5373094B2 JP 2011531450 A JP2011531450 A JP 2011531450A JP 2011531450 A JP2011531450 A JP 2011531450A JP 5373094 B2 JP5373094 B2 JP 5373094B2
- Authority
- JP
- Japan
- Prior art keywords
- neopentasilane
- general formula
- thf
- producing
- ether compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title description 4
- -1 ether compound Chemical class 0.000 claims description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 125000006413 ring segment Chemical group 0.000 claims description 4
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical group Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 8
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 150000002170 ethers Chemical class 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- VFTFKUDGYRBSAL-UHFFFAOYSA-N 15-crown-5 Chemical compound C1COCCOCCOCCOCCO1 VFTFKUDGYRBSAL-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229920000570 polyether Polymers 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- XFPJTCMBFSZPEX-UHFFFAOYSA-N tetrasilylsilane Chemical compound [SiH3][Si]([SiH3])([SiH3])[SiH3] XFPJTCMBFSZPEX-UHFFFAOYSA-N 0.000 description 2
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- JYUXDXWXTPSAEL-UHFFFAOYSA-N 1,4-dioxane;oxolane Chemical compound C1CCOC1.C1COCCO1 JYUXDXWXTPSAEL-UHFFFAOYSA-N 0.000 description 1
- QNTPNTFBQZBRCK-UHFFFAOYSA-N 1,5,9,13-tetraoxacyclohexadecane Chemical compound C1COCCCOCCCOCCCOC1 QNTPNTFBQZBRCK-UHFFFAOYSA-N 0.000 description 1
- HGRVTNYKVLTPAB-UHFFFAOYSA-N 2,2-dimethyl-1,4-dioxane Chemical compound CC1(C)COCCO1 HGRVTNYKVLTPAB-UHFFFAOYSA-N 0.000 description 1
- LJPCNSSTRWGCMZ-UHFFFAOYSA-N 3-methyloxolane Chemical compound CC1CCOC1 LJPCNSSTRWGCMZ-UHFFFAOYSA-N 0.000 description 1
- SBUOHGKIOVRDKY-UHFFFAOYSA-N 4-methyl-1,3-dioxolane Chemical compound CC1COCO1 SBUOHGKIOVRDKY-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- SIPUZPBQZHNSDW-UHFFFAOYSA-N bis(2-methylpropyl)aluminum Chemical compound CC(C)C[Al]CC(C)C SIPUZPBQZHNSDW-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000003983 crown ethers Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PZKOFHKJGUNVTM-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyl)silyl]silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl PZKOFHKJGUNVTM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Description
この際、一般式(2)
RはH、Cl、Br、及びIから選択されており、
Xは負ではない整数〜5である]
のケイ素化合物を、エーテル化合物(E)の存在下で反応させる、前記製造方法である。
熱電対、還流冷却器、及び栓を有する、窒素ブランケットされた3つ口フラスコ中に、ヘキサクロロジシラン127g、及びテトラヒドロフラン10gを装入し、そして撹拌しながら沸騰するまで加熱した。ヘキサクロロジシランは154℃でようやく沸騰したのにも拘わらず、約100℃ですでに冷却器のところに凝縮物(Kondensat)の形成が観察された。
続いて、THF(1g)とヘキサクロロジシラン(10g)との様々な混合物を、室温で数日間貯蔵した。未反応のヘキサクロロジシランの他に再び、テトラクロロシランとドデカクロロネオペンタシランが形成された(Si29によって検出)。
この試験のためにヘキサクロロジシラン約5g及び触媒1gを、両側でネジ止めされた鋼管に入れ、そして油浴中で170℃に加熱した。
15−クラウン−5 98%、1,4,7,10,13−ペンタオキサシクロペンタデカン(クラウンエーテル)
シリコン油 AK20(本発明によらないもの)
THF
1,4−ジオキサン
である。
熱電対、撹拌冷却器、及びマグネチックスターラを備え、アルゴンブランケットを有するフラスコ中に、ヘキサクロロジシラン106g、及びテトラヒドロフラン10gを装入した。この混合物を5時間、還流で加熱し、引き続き冷却した。今回は26℃で再度発熱性反応が起こった(約4℃の温度上昇)。翌日、もう一度5時間還流で煮沸し、26℃での冷却の際に4℃の温度上昇が起こった。このことから結論づけられるのは、付加生成物の結晶化においては、テトラクロロシランとドデカクロロネオペンタシランが熱を放出するということである。冷却後にはその都度、無色の結晶が生成し、この結晶をグローブボックス中で濾別し、そしてテトラクロロシランで後洗浄した。固体が約32g得られた。
テトラヒドロフラン量についての、ヘキサクロロジシラン分解の依存性試験
これらの試験は実施例3に記載されたように、鋼管内で210℃で3日間行った。混合物はまた、同じ時間、室温で貯蔵した。
THF 5.1%:同上
THF 1%:同上
THF 0.5%:同上
THF 0.25%:同上
THF 470ppm:分解の痕跡量
THF 240ppm:分解の痕跡量。
これらの試験は実施例3に記載されたように、鋼管内で100℃若しくは150℃で1.3日間行った。
Claims (3)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008042934A DE102008042934A1 (de) | 2008-10-17 | 2008-10-17 | Verfahren zur Herstellung von Neopentasilanen |
DE102008042934.1 | 2008-10-17 | ||
PCT/EP2009/063136 WO2010043551A1 (de) | 2008-10-17 | 2009-10-09 | Verfahren zur herstellung von neopentasilanen |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012505815A JP2012505815A (ja) | 2012-03-08 |
JP5373094B2 true JP5373094B2 (ja) | 2013-12-18 |
Family
ID=41395818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011531450A Expired - Fee Related JP5373094B2 (ja) | 2008-10-17 | 2009-10-09 | ネオペンタシランの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8883111B2 (ja) |
EP (1) | EP2334599A1 (ja) |
JP (1) | JP5373094B2 (ja) |
KR (1) | KR101336407B1 (ja) |
CN (1) | CN102186774A (ja) |
DE (1) | DE102008042934A1 (ja) |
WO (1) | WO2010043551A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009027194A1 (de) | 2009-06-25 | 2010-12-30 | Wacker Chemie Ag | Verfahren zur Herstellung von Dodecahalogenneopentasilanen |
DE102010062984A1 (de) | 2010-12-14 | 2012-06-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Halogen- und Hydridosilane |
DE102011005387A1 (de) * | 2011-03-10 | 2012-09-13 | Wacker Chemie Ag | Verfahren zur Reduzierung des Aluminiumgehaltes von Neopentasilan |
DE102013010099B4 (de) * | 2013-06-18 | 2015-07-09 | Evonik Industries Ag | Verfahren zur Herstellung strukturierter Beschichtungen, mit dem Verfahren hergestellte strukturierte Beschichtungen und ihre Verwendung |
JP6346555B2 (ja) * | 2013-12-20 | 2018-06-20 | 株式会社日本触媒 | 環状ハロシラン中性錯体 |
US11104582B2 (en) * | 2014-07-22 | 2021-08-31 | Momentive Performance Materials Gmbh | Process for the cleavage of silicon-silicon bonds and/or silicon-chlorine bonds in mono-, poly- and/or oligosilanes |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4610859A (en) * | 1983-12-29 | 1986-09-09 | Mitsui Toatsu Chemicals, Inc. | Process for producing silicon hydrides |
JPS60176915A (ja) * | 1984-02-21 | 1985-09-11 | Central Glass Co Ltd | ジシランの製造法 |
JPS6191011A (ja) | 1984-10-08 | 1986-05-09 | Mitsui Toatsu Chem Inc | 水素化ケイ素の製造方法 |
EP1765332A2 (en) * | 2004-06-17 | 2007-03-28 | Cengent Therapeutics, Inc. | Trisubstituted nitrogen modulators of tyrosine phosphatases |
WO2008051328A1 (en) | 2006-10-24 | 2008-05-02 | Dow Corning Corporation | Composition comprising neopentasilane and method of preparing same |
DE102008025260B4 (de) * | 2008-05-27 | 2010-03-18 | Rev Renewable Energy Ventures, Inc. | Halogeniertes Polysilan und thermisches Verfahren zu dessen Herstellung |
-
2008
- 2008-10-17 DE DE102008042934A patent/DE102008042934A1/de not_active Withdrawn
-
2009
- 2009-10-09 US US13/062,868 patent/US8883111B2/en not_active Expired - Fee Related
- 2009-10-09 JP JP2011531450A patent/JP5373094B2/ja not_active Expired - Fee Related
- 2009-10-09 WO PCT/EP2009/063136 patent/WO2010043551A1/de active Application Filing
- 2009-10-09 KR KR1020117007245A patent/KR101336407B1/ko not_active IP Right Cessation
- 2009-10-09 EP EP09783870A patent/EP2334599A1/de not_active Withdrawn
- 2009-10-09 CN CN200980140834XA patent/CN102186774A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20110171098A1 (en) | 2011-07-14 |
DE102008042934A1 (de) | 2010-04-22 |
US8883111B2 (en) | 2014-11-11 |
CN102186774A (zh) | 2011-09-14 |
JP2012505815A (ja) | 2012-03-08 |
WO2010043551A1 (de) | 2010-04-22 |
KR20110063502A (ko) | 2011-06-10 |
EP2334599A1 (de) | 2011-06-22 |
KR101336407B1 (ko) | 2013-12-04 |
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