CN102333784A - 环状氮杂-硅化合物 - Google Patents
环状氮杂-硅化合物 Download PDFInfo
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- 150000001875 compounds Chemical class 0.000 title abstract description 7
- 125000004122 cyclic group Chemical group 0.000 title abstract description 3
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 12
- 150000002367 halogens Chemical class 0.000 claims abstract description 12
- 229910008045 Si-Si Inorganic materials 0.000 claims abstract description 11
- 229910006411 Si—Si Inorganic materials 0.000 claims abstract description 11
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910007991 Si-N Inorganic materials 0.000 claims abstract description 8
- 229910006294 Si—N Inorganic materials 0.000 claims abstract description 8
- WNEKQXOSUUVBPY-UHFFFAOYSA-N N1C=CC=CC=C1.[Si] Chemical compound N1C=CC=CC=C1.[Si] WNEKQXOSUUVBPY-UHFFFAOYSA-N 0.000 claims description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 150000001721 carbon Chemical group 0.000 claims description 10
- 229910000077 silane Inorganic materials 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 claims description 9
- -1 amine salt Chemical class 0.000 claims description 8
- 150000001412 amines Chemical class 0.000 claims description 7
- 150000004874 silinanes Chemical class 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 150000002431 hydrogen Chemical class 0.000 abstract 2
- 238000009835 boiling Methods 0.000 description 5
- 125000000031 ethylamino group Chemical group [H]C([H])([H])C([H])([H])N([H])[*] 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- ZFFBIQMNKOJDJE-UHFFFAOYSA-N 2-bromo-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(Br)C(=O)C1=CC=CC=C1 ZFFBIQMNKOJDJE-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical group ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 2
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001335 aliphatic alkanes Chemical group 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Chemical compound [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 2
- XWBDWHCCBGMXKG-UHFFFAOYSA-N ethanamine;hydron;chloride Chemical compound Cl.CCN XWBDWHCCBGMXKG-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012454 non-polar solvent Substances 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- CPRMKOQKXYSDML-UHFFFAOYSA-M rubidium hydroxide Chemical compound [OH-].[Rb+] CPRMKOQKXYSDML-UHFFFAOYSA-M 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- ODZPKZBBUMBTMG-UHFFFAOYSA-N sodium amide Chemical compound [NH2-].[Na+] ODZPKZBBUMBTMG-UHFFFAOYSA-N 0.000 description 2
- IVSQMSIRHKTHCB-UHFFFAOYSA-N 1,3,2,4-diazadisiletidine Chemical class N1[SiH2]N[SiH2]1 IVSQMSIRHKTHCB-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- TYPQLHNIYGLALA-UHFFFAOYSA-N N1[SiH2][SiH2][SiH2]1 Chemical class N1[SiH2][SiH2][SiH2]1 TYPQLHNIYGLALA-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229910001038 basic metal oxide Inorganic materials 0.000 description 1
- 150000003818 basic metals Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- VPZDAHBNTYZYHC-UHFFFAOYSA-N chlorosilylamine Chemical compound N[SiH2]Cl VPZDAHBNTYZYHC-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000005826 halohydrocarbons Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- UBJFKNSINUCEAL-UHFFFAOYSA-N lithium;2-methylpropane Chemical compound [Li+].C[C-](C)C UBJFKNSINUCEAL-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- WMAAIGILTZEOHE-UHFFFAOYSA-N n-[bis(ethylamino)-[tris(ethylamino)silyl]silyl]ethanamine Chemical compound CCN[Si](NCC)(NCC)[Si](NCC)(NCC)NCC WMAAIGILTZEOHE-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- NTTOTNSKUYCDAV-UHFFFAOYSA-N potassium hydride Chemical compound [KH] NTTOTNSKUYCDAV-UHFFFAOYSA-N 0.000 description 1
- 229910000105 potassium hydride Inorganic materials 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- 125000002769 thiazolinyl group Chemical group 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/025—Silicon compounds without C-silicon linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
Abstract
本发明涉及环状氮杂-硅化合物以及其制备方法,该环状氮杂-硅化合物通过Si-Si或Si-N单键键连4至10个通式(I)和(II)的单元制备,其中Y选自-NR1R2、氢和卤素,R1和R2选自氢和具有1至20个碳原子的烃基,以及R3为具有1至20个碳原子的烃基,条件为环中至少两个通式(I)的单元通过Si-Si单键互相键连,最多35mol%的Y基团为氢,和最多15mol%的Y基团为卤素。=SiY2 (I),=NR3 (II)。
Description
技术领域
本发明涉及通过Si-Si或Si-N单键键连的由4至10个单元形成的环状氮杂-硅化合物(环状氮杂-硅杂化合物,cyclic aza-sila compound)以及其制备。
背景技术
氨基硅烷化合物对于Si-N和Si-O层的生产意义重大。为此目的已经研究了氨基取代单硅烷;一些乙硅烷(disilane)也显示出良好的性能。在这方面,人们对具有高硅含量的化合物很感兴趣。特别关注的是环状物,其尚未被描述,且由于相邻的硅原子而具有高含硅量。
US 3565934描述了氨基硅烷的热分解,其中形成了1,3-二氮杂二硅杂环丁烷(1,3-diazadisilacyclobutanes)。胺氯基团促进了这种反应。铵盐导致胺从氨基硅烷中脱除。
WO 2004/044958描述了由氨基氯硅烷和叔丁基锂制备1,3-二氮杂二硅杂环丁烷。
发明内容
本发明提供了由4至10个单元形成的环状氮杂-硅化合物,所述单元通过Si-Si或Si-N单键键连,并且为通式(I)和(II)
=SiY2 (I)
=NR3 (II)
其中,
Y选自-NR1R2、氢和卤素,
R1和R2选自氢和具有1至20个碳原子的烃基基团,以及
R3为具有1至20个碳原子的烃基基团,
附加条件是环中至少两个通式(I)的单元通过Si-Si单键互相键连,
最多35mol%的Y基团为氢并且最多15mol%的Y基团为卤素。
该环状氮杂-硅化合物是挥发性的并因此非常适合用于Si-N和Si-O层的生产。
R1、R2和R3优选线性或支链的烷基、环烷基、芳基、烯基或芳烷基基团,更优选烷基基团。R1、R2和R3基团优选具有1至12,特别是1至6的碳原子。特别优选R1、R2和R3基团为甲基、乙基、正丙基、异丙基、正丁基、异丁基、叔丁基、正戊基、异戊酯、新戊基或叔戊基基团和苯基基团。
在通式(I)中,优选最多20mol%,更优选最多10mol%,特别是没有Y基团为氢。当Y为卤素时,优选溴和碘,并且特别是氯。
在通式(I)中,优选最多1mol%,更优选最多0.1mol%,特别是最多0.01mol%,特别是优选没有Y基团为卤素。
优选,Y为-NHR2基团。R2优选如R3定义的。
该环状氮杂-硅化合物优选由4、6或10个通式(I)和(II)的单元形成。特别优选由3或4个通式(I)的单元和1或2个通式(II)的单元形成的环状氮杂-硅化合物。
特别优选环状氮杂-硅化合物为1-氮杂-2,3,4-三硅杂环丁烷(1-aza-2,3,4-trisilacyclobutanes),特别是1-烷基-2,2,3,3,4,4-六烷氨基-1-氮杂-2,3,4-三硅杂环丁烷(1-alkyl-2,2,3,3,4,4-hexakisalkylamino-1-aza-2,3,4-trisilacyclobutanes)和1,4-二氮杂-2,3,5,6-四硅杂环己烷(1,4-diaza-2,3,5,6-tetrasilacyclohexanes),特别是1,4-二烷基-2,2,3,3,5,5,6,6-八烷氨基-1,4-二氮杂-2,3,5,6-四硅杂环己烷(1,4-dialkyl-2,2,3,3,5,5,6,6-octakisalkylamino-1,4-diaza-2,3,5,6-tetrasilacyclohexanes)。
该环状氮杂-硅化合物可通过通式(III)的线性低聚硅烷和通式(IV)的胺盐反应制备,
Y(SiY2)mSiY3 (III)
X(H2NR3) (IV)
其中,
X为卤素原子,和
m具有1、2或3的值,以及
R3和Y各自如上述定义。
为了控制环的大小,选择使用通式(III)的低聚硅烷和通式(IV)的胺盐的比率。
优选地,X为氯原子。
优选地,相对于通式(III)的线性低聚硅烷使用不足的通式(IV)的胺盐。
优选地,在反应中,基于通式(III)的线性低聚硅烷,存在至少0.1%重量,更优选至少1%重量的通式(IV)的胺盐。
转变温度优选至少20℃,更优选至少50℃,并且优选最高200℃,更优选最高150℃。温度上限优选由使用的化合物的沸点确定。
该方法可以在溶剂中进行,特别是非极性溶剂。优选烃和卤代烃。优选在1巴(bar)下具有最高150℃的沸点或沸程的溶剂混合物。这样的溶剂的例子为具有3至10个碳原子的烷烃、具有6至12个碳原子的芳烃、具有1至3个碳原子的卤代烷烃及其混合物。优选的例子为二氯甲烷、四氯化碳、丁烷、戊烷、己烷、庚烷、辛烷、苯、甲苯和二甲苯及其异构体混合物。
该反应进程可通过游离胺的形成来检测。
该环状氮杂-硅化合物也可通过加热通式(III)的线性低聚硅烷来制备,
Y(SiY2)mSiY3 (III)
其中,
m具有1、2或3的值,以及
Y如上述定义。
通式(III)的线性低聚硅烷可在该制备方法中不成比例(disproportionate)。
转变温度优选至少80℃,更优选至少120℃,并且优选最高250℃,更优选最高200℃。温度上限优选由使用的化合物的沸点确定。
该反应优选在路易斯(Lewis)碱存在的情况下发生。碱的例子为氢氧化物,诸如碱金属和碱土金属氢氧化物,特别是LiOH、NaOH、KOH、RbOH、CsOH、Mg(OH)2、Ca(OH)2、Sr(OH)2、Ba(OH)2;氨;胺;氨基化合物(amide),诸如氨基钠(sodium amide)和氨基钾(potassium amide);硅氮烷化物(silazides),诸如硅氮烷化锂(lithium silazide);氢化物,诸如氢化钠、氢化钾和氢化钙;醇盐(alkoxide),诸如异丙醇盐、乙醇盐和甲醇盐。优选碱为胺,特别是伯胺和仲胺,以及诸如硅氮烷化锂的硅氮烷化物。
优选地,在反应中,基于通式(III)的线性低聚硅烷,存在按重量计至少0.1%,更优选按重量计至少1%的碱。
在一种具体实施方式中,在反应中形成的胺作为催化剂。优选使胺不能从反应混合物中逸出。这优选通过增加压力完成。
该过程可在溶剂中进行,特别是非极性溶剂。优选上述溶剂,虽然也优选高沸点溶剂。
在上式中的所有上述符号是彼此独立定义。
具体实施方式
在下面的实施例中,除非另有说明,在每一种情况下所有量和百分比都基于重量,所有压力为1巴(绝对值)并且所有温度为20℃。
实施例1:1,4-二乙基-2,2,3,3,5,5,6,6-八乙氨基-1,4-二氮杂-2,3,5,6-四硅杂环己烷(1,4-diethyl-2,2,3,3,5,5,6,6-octakisethylamino-1,4-diaza-2,3,5,6-tetrasilacyclohexane)的制备
38g纯度为98%的六乙氨基乙硅烷(hexakisethylaminodisilane)和1.3%重量的乙胺盐酸盐混合,并加热回流7小时。温度短暂上升至135℃,并且几分钟后下降至115℃。这形成了9g的1,4-二乙基-2,2,3,3,5,5,6,6-八乙氨基-1,4-二氮杂-2,3,5,6-四硅杂环己烷。
当使用7%重量的乙胺盐酸盐时,在相同的反应条件下,40g的六乙氨基乙硅烷形成18g的1,4-二乙基-2,2,3,3,5,5,6,6-八乙氨基-1,4-二氮杂-2,3,5,6-四硅杂环己烷。
实施例2:1-乙基-2,2,3,3,4,4-六乙氨基-1-氮杂-2,3,4-三硅杂环丁烷(1-ethyl-2,2,3,3,4,4-hexakisethylamino-1-aza-2,3,4-trisilacyclobutane)的制备
在一个带有回流冷凝器的玻璃烧瓶中,在流动的氮气下在150℃加热40g的六乙氨基乙硅烷,35小时后形成25g的四乙氨基硅烷和2g的1-乙基-2,2,3,3,4,4-六乙氨基-1-氮杂-2,3,4-三硅杂环丁烷的混合物。1,4-二乙基-2,2,3,3,5,5,6,6-八乙氨基-1,4-二氮杂-2,3,5,6-四硅杂环己烷只能痕量检测。与实施例1相比,温度在150℃保持恒定。
实施例3:1-乙基-2,2,3,3,4,4-六乙氨基-1-氮杂-2,3,4-三硅杂环丁烷的制备
4g的六乙氨基乙硅烷被引入到一个在两端有压力密封螺旋盖的钢管中。该管子被加热至150℃,加热5天。除了未分解的起始原料之外,发现4%重量的八乙氨基丙硅烷(octakisethylaminotrisilane)和11%重量的1-乙基-2,2,3,3,4,4-六乙氨基-1-氮杂-2,3,4-三硅杂环丁烷。与实施例1和2相比,该样品包含9%重量的乙胺没有逸出。
Claims (11)
1.一种环状氮杂-硅化合物,由通过Si-Si或Si-N单键键连并且为通式(I)和(II)的4至10个单元形成,
=SiY2 (I)
=NR3 (II)
其中,
Y选自-NR1R2、氢和卤素,
R1和R2选自氢和具有1至20个碳原子的烃基基团,以及
R3为具有1至20个碳原子的烃基基团,
附加条件是环中至少两个通式(I)的单元通过Si-Si单键互相键连,
最多35mol%的Y基团为氢,以及
最多15mol%的Y基团为卤素。
2.根据权利要求1所述的环状氮杂-硅化合物,其中R1、R2和R3各自为烷基基团。
3.根据权利要求1或2所述的环状氮杂-硅化合物,其中Y为-NHR2基团。
4.根据权利要求1至3所述的环状氮杂-硅化合物,其选自1-氮杂-2,3,4-三硅杂环丁烷和1,4-二氮杂-2,3,5,6-四硅杂环己烷。
5.一种用于制备环状氮杂-硅化合物的方法,所述环状氮杂-硅化合物由通过Si-Si或Si-N单键键连并且为通式(I)和(II)的4至10个单元形成,
=SiY2 (I)
=NR3 (II)
其中,
Y选自-NR1R2、氢和卤素,
R1和R2选自氢和具有1至20个碳原子的烃基基团,以及
R3为具有1至20个碳原子的烃基基团,
附加条件是环中至少两个通式(I)的单元通过Si-Si单键互相键连,
最多35mol%的Y基团为氢,以及
最多15mol%的Y基团为卤素,
其中通式(III)的线性低聚硅烷与通式(IV)的胺盐反应,
Y(SiY2)mSiY3 (III)
X(H2NR3) (IV)
其中,
X为卤素原子,和
m具有1、2或3的值,以及
R3和Y各自如上述定义。
6.根据权利要求5所述的方法,其中X为氯原子。
7.一种用于制备环状氮杂-硅化合物的方法,所述环状氮杂-硅化合物由通过Si-Si或Si-N单键键连并且为通式(I)和(II)的4至10个单元形成,
=SiY2 (I)
=NR3 (II)
其中,
Y选自-NR1R2、氢和卤素,
R1和R2选自氢和具有1至20个碳原子的烃基基团,以及
R3为具有1至20个碳原子的烃基基团,
附加条件是环中至少两个通式(I)的单元通过Si-Si单键互相键连,
最多35mol%的Y基团为氢,和
最多15mol%的Y基团为卤素,
其中通式(III)的线性低聚硅烷被加热,
Y(SiY2)mSiY3 (III)
其中,
m具有1、2或3的值,以及
Y如上述定义。
8.根据权利要求7所述的方法,其中转变温度为至少80℃。
9.根据权利要求7或8所述的方法,其中反应在碱存在的情况下发生。
10.根据权利要求9所述的方法,其中所述碱为胺。
11.根据权利要求5至10所述的方法,其中使用了溶剂。
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PCT/EP2010/051799 WO2010097303A1 (de) | 2009-02-26 | 2010-02-12 | Cyclische aza-silaverbindungen |
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CN104250258A (zh) * | 2013-06-26 | 2014-12-31 | 气体产品与化学公司 | 氮杂聚硅烷前体和沉积包含该前体的薄膜的方法 |
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WO2004044958A2 (en) * | 2002-11-14 | 2004-05-27 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films |
US20050037627A1 (en) * | 2001-11-30 | 2005-02-17 | Christian Dussarrat | Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition |
US20050107627A1 (en) * | 2001-11-30 | 2005-05-19 | Christian Dussarrat | Hexakis(monohydrocarbylamino) disilanes and method for the preparation thereof |
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US6329487B1 (en) * | 1999-11-12 | 2001-12-11 | Kion Corporation | Silazane and/or polysilazane compounds and methods of making |
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US3565934A (en) * | 1964-09-10 | 1971-02-23 | Monsanto Co | Diazadisiletidines and the preparation thereof |
US20050037627A1 (en) * | 2001-11-30 | 2005-02-17 | Christian Dussarrat | Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition |
US20050107627A1 (en) * | 2001-11-30 | 2005-05-19 | Christian Dussarrat | Hexakis(monohydrocarbylamino) disilanes and method for the preparation thereof |
WO2004044958A2 (en) * | 2002-11-14 | 2004-05-27 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films |
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Cited By (2)
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CN104250258A (zh) * | 2013-06-26 | 2014-12-31 | 气体产品与化学公司 | 氮杂聚硅烷前体和沉积包含该前体的薄膜的方法 |
CN104250258B (zh) * | 2013-06-26 | 2018-01-19 | 弗萨姆材料美国有限责任公司 | 氮杂聚硅烷前体和沉积包含该前体的薄膜的方法 |
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EP2401284B1 (de) | 2012-10-24 |
JP2012518666A (ja) | 2012-08-16 |
EP2401284A1 (de) | 2012-01-04 |
US8487124B2 (en) | 2013-07-16 |
WO2010097303A1 (de) | 2010-09-02 |
US20110301373A1 (en) | 2011-12-08 |
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