JP5372337B2 - 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法 - Google Patents

有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法 Download PDF

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Publication number
JP5372337B2
JP5372337B2 JP2007082278A JP2007082278A JP5372337B2 JP 5372337 B2 JP5372337 B2 JP 5372337B2 JP 2007082278 A JP2007082278 A JP 2007082278A JP 2007082278 A JP2007082278 A JP 2007082278A JP 5372337 B2 JP5372337 B2 JP 5372337B2
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Japan
Prior art keywords
region
layer
substrate
film transistor
forming
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Expired - Fee Related
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JP2007082278A
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English (en)
Japanese (ja)
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JP2008243582A (ja
JP2008243582A5 (enExample
Inventor
健司 笠原
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
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Priority to JP2007082278A priority Critical patent/JP5372337B2/ja
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to KR1020097022309A priority patent/KR101441159B1/ko
Priority to EP08722780A priority patent/EP2136606B1/en
Priority to US12/532,976 priority patent/US8030125B2/en
Priority to CN200880010127.4A priority patent/CN101647320B/zh
Priority to PCT/JP2008/055570 priority patent/WO2008123244A1/ja
Priority to TW097111060A priority patent/TWI442815B/zh
Publication of JP2008243582A publication Critical patent/JP2008243582A/ja
Publication of JP2008243582A5 publication Critical patent/JP2008243582A5/ja
Priority to US13/221,068 priority patent/US8324627B2/en
Application granted granted Critical
Publication of JP5372337B2 publication Critical patent/JP5372337B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2007082278A 2007-03-27 2007-03-27 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法 Expired - Fee Related JP5372337B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2007082278A JP5372337B2 (ja) 2007-03-27 2007-03-27 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法
EP08722780A EP2136606B1 (en) 2007-03-27 2008-03-25 Organic thin film transistor substrate, its manufacturing method, image display panel, and its manufacturing method
US12/532,976 US8030125B2 (en) 2007-03-27 2008-03-25 Organic thin-film transistor substrate, its manufacturing method, image display panel, and its manufacturing method
CN200880010127.4A CN101647320B (zh) 2007-03-27 2008-03-25 有机薄膜晶体管基板及其制造方法、以及图像显示面板及其制造方法
KR1020097022309A KR101441159B1 (ko) 2007-03-27 2008-03-25 유기 박막 트랜지스터 기판 및 그의 제조 방법, 및 화상 표시 패널 및 그의 제조 방법
PCT/JP2008/055570 WO2008123244A1 (ja) 2007-03-27 2008-03-25 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法
TW097111060A TWI442815B (zh) 2007-03-27 2008-03-27 Organic thin film transistor substrate and manufacturing method thereof, and image display panel and manufacturing method thereof
US13/221,068 US8324627B2 (en) 2007-03-27 2011-08-30 Organic thin film transistor substrate, its manufacturing method, image display panel, and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007082278A JP5372337B2 (ja) 2007-03-27 2007-03-27 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法

Publications (3)

Publication Number Publication Date
JP2008243582A JP2008243582A (ja) 2008-10-09
JP2008243582A5 JP2008243582A5 (enExample) 2010-03-25
JP5372337B2 true JP5372337B2 (ja) 2013-12-18

Family

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JP2007082278A Expired - Fee Related JP5372337B2 (ja) 2007-03-27 2007-03-27 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法

Country Status (7)

Country Link
US (2) US8030125B2 (enExample)
EP (1) EP2136606B1 (enExample)
JP (1) JP5372337B2 (enExample)
KR (1) KR101441159B1 (enExample)
CN (1) CN101647320B (enExample)
TW (1) TWI442815B (enExample)
WO (1) WO2008123244A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4953166B2 (ja) * 2007-11-29 2012-06-13 カシオ計算機株式会社 表示パネルの製造方法
US8617920B2 (en) * 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101084192B1 (ko) * 2010-02-16 2011-11-17 삼성모바일디스플레이주식회사 유기 발광 표시 장치
CN102844875A (zh) 2010-04-22 2012-12-26 出光兴产株式会社 有机薄膜晶体管
KR101839930B1 (ko) * 2010-12-29 2018-04-27 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
DE102011086689B4 (de) * 2011-11-21 2017-02-16 Osram Oled Gmbh Verfahren zum Herstellen eines opto-elektronischen Bauelements
US9012259B2 (en) 2013-01-17 2015-04-21 Stmicroelectronics S.R.L. Thin film transistors formed by organic semiconductors using a hybrid patterning regime
CN103560211B (zh) * 2013-11-13 2017-04-05 深圳市华星光电技术有限公司 有机电致发光器件的制作方法及制作的有机电致发光器件
CN105742311B (zh) * 2014-12-11 2018-11-13 昆山国显光电有限公司 一种显示装置及其制备方法
US11417862B2 (en) * 2018-03-02 2022-08-16 Sharp Kabushiki Kaisha Display device including lead wiring lines covered by first and second organic films, and production method therefor
JP7138673B2 (ja) * 2020-03-31 2022-09-16 キヤノントッキ株式会社 電子デバイスの製造方法、測定方法、及び、成膜装置
TWI787720B (zh) 2021-01-25 2022-12-21 友達光電股份有限公司 有機半導體基板

Family Cites Families (14)

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EP0925112A1 (en) 1996-09-10 1999-06-30 Imperial Chemical Industries Plc Fluorination catalyst and process
CN101068025B (zh) 1997-08-21 2010-05-12 精工爱普生株式会社 显示装置
US6661180B2 (en) * 2001-03-22 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method for the same and electronic apparatus
JP2004171861A (ja) * 2002-11-19 2004-06-17 Seiko Epson Corp 有機ｅｌ装置の製造方法及び有機ｅｌ装置、並びに電子機器
KR100603349B1 (ko) 2004-06-17 2006-07-20 삼성에스디아이 주식회사 박막 트랜지스터, 이를 제조한 방법 및 이를 구비하는평판 디스플레이 장치
KR100659061B1 (ko) * 2004-09-20 2006-12-19 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판표시장치
US7985677B2 (en) * 2004-11-30 2011-07-26 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP4845491B2 (ja) * 2004-11-30 2011-12-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100683766B1 (ko) * 2005-03-30 2007-02-15 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
US7737629B2 (en) * 2005-03-31 2010-06-15 Seiko Epson Corporation Light emitting device, method of manufacturing the same, and electronic apparatus
JP2006310289A (ja) * 2005-03-31 2006-11-09 Seiko Epson Corp 発光装置、発光装置の製造方法、及び電子機器
JP2006294484A (ja) * 2005-04-13 2006-10-26 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子とその製造方法及び有機エレクトロルミネッセンス表示装置
KR100626082B1 (ko) 2005-07-06 2006-09-20 삼성에스디아이 주식회사 평판표시장치
JP2007019014A (ja) * 2005-07-06 2007-01-25 Samsung Sdi Co Ltd 平板表示装置及びその製造方法

Also Published As

Publication number Publication date
JP2008243582A (ja) 2008-10-09
WO2008123244A1 (ja) 2008-10-16
TW200904241A (en) 2009-01-16
US8030125B2 (en) 2011-10-04
US8324627B2 (en) 2012-12-04
US20110309366A1 (en) 2011-12-22
TWI442815B (zh) 2014-06-21
CN101647320B (zh) 2012-12-12
KR101441159B1 (ko) 2014-09-17
US20100072464A1 (en) 2010-03-25
KR20090128511A (ko) 2009-12-15
EP2136606A1 (en) 2009-12-23
EP2136606A4 (en) 2011-04-06
CN101647320A (zh) 2010-02-10
EP2136606B1 (en) 2012-05-16

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