WO2008123244A1 - 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法 - Google Patents

有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法 Download PDF

Info

Publication number
WO2008123244A1
WO2008123244A1 PCT/JP2008/055570 JP2008055570W WO2008123244A1 WO 2008123244 A1 WO2008123244 A1 WO 2008123244A1 JP 2008055570 W JP2008055570 W JP 2008055570W WO 2008123244 A1 WO2008123244 A1 WO 2008123244A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
organic thin
manufacturing
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/055570
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Kenji Kasahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to EP08722780A priority Critical patent/EP2136606B1/en
Priority to US12/532,976 priority patent/US8030125B2/en
Priority to CN200880010127.4A priority patent/CN101647320B/zh
Priority to KR1020097022309A priority patent/KR101441159B1/ko
Publication of WO2008123244A1 publication Critical patent/WO2008123244A1/ja
Anticipated expiration legal-status Critical
Priority to US13/221,068 priority patent/US8324627B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
PCT/JP2008/055570 2007-03-27 2008-03-25 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法 Ceased WO2008123244A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP08722780A EP2136606B1 (en) 2007-03-27 2008-03-25 Organic thin film transistor substrate, its manufacturing method, image display panel, and its manufacturing method
US12/532,976 US8030125B2 (en) 2007-03-27 2008-03-25 Organic thin-film transistor substrate, its manufacturing method, image display panel, and its manufacturing method
CN200880010127.4A CN101647320B (zh) 2007-03-27 2008-03-25 有机薄膜晶体管基板及其制造方法、以及图像显示面板及其制造方法
KR1020097022309A KR101441159B1 (ko) 2007-03-27 2008-03-25 유기 박막 트랜지스터 기판 및 그의 제조 방법, 및 화상 표시 패널 및 그의 제조 방법
US13/221,068 US8324627B2 (en) 2007-03-27 2011-08-30 Organic thin film transistor substrate, its manufacturing method, image display panel, and its manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-082278 2007-03-27
JP2007082278A JP5372337B2 (ja) 2007-03-27 2007-03-27 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/532,976 A-371-Of-International US8030125B2 (en) 2007-03-27 2008-03-25 Organic thin-film transistor substrate, its manufacturing method, image display panel, and its manufacturing method
US13/221,068 Division US8324627B2 (en) 2007-03-27 2011-08-30 Organic thin film transistor substrate, its manufacturing method, image display panel, and its manufacturing method

Publications (1)

Publication Number Publication Date
WO2008123244A1 true WO2008123244A1 (ja) 2008-10-16

Family

ID=39830737

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055570 Ceased WO2008123244A1 (ja) 2007-03-27 2008-03-25 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法

Country Status (7)

Country Link
US (2) US8030125B2 (enExample)
EP (1) EP2136606B1 (enExample)
JP (1) JP5372337B2 (enExample)
KR (1) KR101441159B1 (enExample)
CN (1) CN101647320B (enExample)
TW (1) TWI442815B (enExample)
WO (1) WO2008123244A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4953166B2 (ja) * 2007-11-29 2012-06-13 カシオ計算機株式会社 表示パネルの製造方法
US8617920B2 (en) * 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101084192B1 (ko) * 2010-02-16 2011-11-17 삼성모바일디스플레이주식회사 유기 발광 표시 장치
CN102844875A (zh) 2010-04-22 2012-12-26 出光兴产株式会社 有机薄膜晶体管
KR101839930B1 (ko) * 2010-12-29 2018-04-27 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
DE102011086689B4 (de) * 2011-11-21 2017-02-16 Osram Oled Gmbh Verfahren zum Herstellen eines opto-elektronischen Bauelements
US9012259B2 (en) 2013-01-17 2015-04-21 Stmicroelectronics S.R.L. Thin film transistors formed by organic semiconductors using a hybrid patterning regime
CN103560211B (zh) * 2013-11-13 2017-04-05 深圳市华星光电技术有限公司 有机电致发光器件的制作方法及制作的有机电致发光器件
CN105742311B (zh) * 2014-12-11 2018-11-13 昆山国显光电有限公司 一种显示装置及其制备方法
US11417862B2 (en) * 2018-03-02 2022-08-16 Sharp Kabushiki Kaisha Display device including lead wiring lines covered by first and second organic films, and production method therefor
JP7138673B2 (ja) * 2020-03-31 2022-09-16 キヤノントッキ株式会社 電子デバイスの製造方法、測定方法、及び、成膜装置
TWI787720B (zh) 2021-01-25 2022-12-21 友達光電股份有限公司 有機半導體基板

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998010862A1 (en) 1996-09-10 1998-03-19 Imperial Chemical Industries Plc Fluorination catalyst and process
JP2004171861A (ja) * 2002-11-19 2004-06-17 Seiko Epson Corp 有機ｅｌ装置の製造方法及び有機ｅｌ装置、並びに電子機器
JP2006005329A (ja) * 2004-06-17 2006-01-05 Samsung Sdi Co Ltd 薄膜トランジスタ，その製造方法及び該薄膜トランジスタを備える平板ディスプレイ装置
JP2006093652A (ja) * 2004-09-20 2006-04-06 Samsung Sdi Co Ltd 有機薄膜トランジスタ及びこれを備えた平板表示装置
JP2006186332A (ja) * 2004-11-30 2006-07-13 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US20060220542A1 (en) 2005-03-30 2006-10-05 Suh Min-Chul Flat panel display and method of manufacturing the same
JP2006294484A (ja) * 2005-04-13 2006-10-26 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子とその製造方法及び有機エレクトロルミネッセンス表示装置
JP2006310289A (ja) * 2005-03-31 2006-11-09 Seiko Epson Corp 発光装置、発光装置の製造方法、及び電子機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101068025B (zh) 1997-08-21 2010-05-12 精工爱普生株式会社 显示装置
US6661180B2 (en) * 2001-03-22 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method for the same and electronic apparatus
US7985677B2 (en) * 2004-11-30 2011-07-26 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7737629B2 (en) * 2005-03-31 2010-06-15 Seiko Epson Corporation Light emitting device, method of manufacturing the same, and electronic apparatus
KR100626082B1 (ko) 2005-07-06 2006-09-20 삼성에스디아이 주식회사 평판표시장치
JP2007019014A (ja) * 2005-07-06 2007-01-25 Samsung Sdi Co Ltd 平板表示装置及びその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998010862A1 (en) 1996-09-10 1998-03-19 Imperial Chemical Industries Plc Fluorination catalyst and process
JP2004171861A (ja) * 2002-11-19 2004-06-17 Seiko Epson Corp 有機ｅｌ装置の製造方法及び有機ｅｌ装置、並びに電子機器
JP2006005329A (ja) * 2004-06-17 2006-01-05 Samsung Sdi Co Ltd 薄膜トランジスタ，その製造方法及び該薄膜トランジスタを備える平板ディスプレイ装置
JP2006093652A (ja) * 2004-09-20 2006-04-06 Samsung Sdi Co Ltd 有機薄膜トランジスタ及びこれを備えた平板表示装置
JP2006186332A (ja) * 2004-11-30 2006-07-13 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US20060220542A1 (en) 2005-03-30 2006-10-05 Suh Min-Chul Flat panel display and method of manufacturing the same
JP2006310289A (ja) * 2005-03-31 2006-11-09 Seiko Epson Corp 発光装置、発光装置の製造方法、及び電子機器
JP2006294484A (ja) * 2005-04-13 2006-10-26 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子とその製造方法及び有機エレクトロルミネッセンス表示装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2136606A4

Also Published As

Publication number Publication date
JP2008243582A (ja) 2008-10-09
TW200904241A (en) 2009-01-16
US8030125B2 (en) 2011-10-04
US8324627B2 (en) 2012-12-04
US20110309366A1 (en) 2011-12-22
TWI442815B (zh) 2014-06-21
CN101647320B (zh) 2012-12-12
KR101441159B1 (ko) 2014-09-17
US20100072464A1 (en) 2010-03-25
JP5372337B2 (ja) 2013-12-18
KR20090128511A (ko) 2009-12-15
EP2136606A1 (en) 2009-12-23
EP2136606A4 (en) 2011-04-06
CN101647320A (zh) 2010-02-10
EP2136606B1 (en) 2012-05-16

Similar Documents

Publication Publication Date Title
WO2008123244A1 (ja) 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法
US9478595B2 (en) Double-sided display OLED array substrate, its manufacturing method, and display device
US9614018B2 (en) COA WOLED structure and manufacturing method thereof
US9276239B2 (en) Method for manufacturing a flexible display device by removing foreign particles
US20160204216A1 (en) Display device, array substrate, and thin film transistor
US8890160B2 (en) AMOLED display and manufacturing method thereof
US20160049453A1 (en) Oled array substrate, manufacturing method of the same, display panel, and display device
WO2009017032A1 (ja) バリア層つき基板、表示素子および表示素子の製造方法
TW200737562A (en) Organic light emitting display of mother substrate unit and method of fabricating the same
CN203026507U (zh) 柔性显示装置
CN103700692A (zh) Oled显示面板及其制作方法
TW200802536A (en) Method of manufacturing semiconductor device
WO2016112663A1 (zh) 制作阵列基板的方法和阵列基板
CN103022080A (zh) 阵列基板及其制作方法、有机发光二极管显示装置
WO2009028453A1 (ja) 薄膜トランジスタ
TW200708181A (en) Organic electroluminescent display panel and fabricatiing method thereof
WO2013155835A1 (zh) 薄膜晶体管、阵列基板及其制造方法和显示面板
EP2475009A3 (en) Organic light emitting display device and method for manufacturing the same
TW200727492A (en) Organic thin film transistor array panel
JP2018536961A (ja) 有機エレクトロルミネッセンス素子及びその作製方法、表示装置
TW200739915A (en) A manufacturing method for a liquid crystal display
US9312276B2 (en) Method for manufacturing array substrate
CN202957245U (zh) 阵列基板及有机发光二极管显示装置
US20200203640A1 (en) Flexible display panel and manufacturing method thereof
TW200615870A (en) Active matrix organic electroluminescent device, fabrication method thereof and electric device employing the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880010127.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08722780

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008722780

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20097022309

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12532976

Country of ref document: US