TWI442815B - Organic thin film transistor substrate and manufacturing method thereof, and image display panel and manufacturing method thereof - Google Patents
Organic thin film transistor substrate and manufacturing method thereof, and image display panel and manufacturing method thereof Download PDFInfo
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- TWI442815B TWI442815B TW097111060A TW97111060A TWI442815B TW I442815 B TWI442815 B TW I442815B TW 097111060 A TW097111060 A TW 097111060A TW 97111060 A TW97111060 A TW 97111060A TW I442815 B TWI442815 B TW I442815B
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- 239000010937 tungsten Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007082278A JP5372337B2 (ja) | 2007-03-27 | 2007-03-27 | 有機薄膜トランジスタ基板及びその製造方法、並びに、画像表示パネル及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200904241A TW200904241A (en) | 2009-01-16 |
| TWI442815B true TWI442815B (zh) | 2014-06-21 |
Family
ID=39830737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097111060A TWI442815B (zh) | 2007-03-27 | 2008-03-27 | Organic thin film transistor substrate and manufacturing method thereof, and image display panel and manufacturing method thereof |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8030125B2 (enExample) |
| EP (1) | EP2136606B1 (enExample) |
| JP (1) | JP5372337B2 (enExample) |
| KR (1) | KR101441159B1 (enExample) |
| CN (1) | CN101647320B (enExample) |
| TW (1) | TWI442815B (enExample) |
| WO (1) | WO2008123244A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4953166B2 (ja) * | 2007-11-29 | 2012-06-13 | カシオ計算機株式会社 | 表示パネルの製造方法 |
| US8617920B2 (en) * | 2010-02-12 | 2013-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR101084192B1 (ko) * | 2010-02-16 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
| CN102844875A (zh) | 2010-04-22 | 2012-12-26 | 出光兴产株式会社 | 有机薄膜晶体管 |
| KR101839930B1 (ko) * | 2010-12-29 | 2018-04-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
| DE102011086689B4 (de) * | 2011-11-21 | 2017-02-16 | Osram Oled Gmbh | Verfahren zum Herstellen eines opto-elektronischen Bauelements |
| US9012259B2 (en) | 2013-01-17 | 2015-04-21 | Stmicroelectronics S.R.L. | Thin film transistors formed by organic semiconductors using a hybrid patterning regime |
| CN103560211B (zh) * | 2013-11-13 | 2017-04-05 | 深圳市华星光电技术有限公司 | 有机电致发光器件的制作方法及制作的有机电致发光器件 |
| CN105742311B (zh) * | 2014-12-11 | 2018-11-13 | 昆山国显光电有限公司 | 一种显示装置及其制备方法 |
| US11417862B2 (en) * | 2018-03-02 | 2022-08-16 | Sharp Kabushiki Kaisha | Display device including lead wiring lines covered by first and second organic films, and production method therefor |
| JP7138673B2 (ja) * | 2020-03-31 | 2022-09-16 | キヤノントッキ株式会社 | 電子デバイスの製造方法、測定方法、及び、成膜装置 |
| TWI787720B (zh) | 2021-01-25 | 2022-12-21 | 友達光電股份有限公司 | 有機半導體基板 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0925112A1 (en) | 1996-09-10 | 1999-06-30 | Imperial Chemical Industries Plc | Fluorination catalyst and process |
| CN101068025B (zh) | 1997-08-21 | 2010-05-12 | 精工爱普生株式会社 | 显示装置 |
| US6661180B2 (en) * | 2001-03-22 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, driving method for the same and electronic apparatus |
| JP2004171861A (ja) * | 2002-11-19 | 2004-06-17 | Seiko Epson Corp | 有機ｅｌ装置の製造方法及び有機ｅｌ装置、並びに電子機器 |
| KR100603349B1 (ko) | 2004-06-17 | 2006-07-20 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이를 제조한 방법 및 이를 구비하는평판 디스플레이 장치 |
| KR100659061B1 (ko) * | 2004-09-20 | 2006-12-19 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이를 구비한 평판표시장치 |
| US7985677B2 (en) * | 2004-11-30 | 2011-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP4845491B2 (ja) * | 2004-11-30 | 2011-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100683766B1 (ko) * | 2005-03-30 | 2007-02-15 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
| US7737629B2 (en) * | 2005-03-31 | 2010-06-15 | Seiko Epson Corporation | Light emitting device, method of manufacturing the same, and electronic apparatus |
| JP2006310289A (ja) * | 2005-03-31 | 2006-11-09 | Seiko Epson Corp | 発光装置、発光装置の製造方法、及び電子機器 |
| JP2006294484A (ja) * | 2005-04-13 | 2006-10-26 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子とその製造方法及び有機エレクトロルミネッセンス表示装置 |
| KR100626082B1 (ko) | 2005-07-06 | 2006-09-20 | 삼성에스디아이 주식회사 | 평판표시장치 |
| JP2007019014A (ja) * | 2005-07-06 | 2007-01-25 | Samsung Sdi Co Ltd | 平板表示装置及びその製造方法 |
-
2007
- 2007-03-27 JP JP2007082278A patent/JP5372337B2/ja not_active Expired - Fee Related
-
2008
- 2008-03-25 WO PCT/JP2008/055570 patent/WO2008123244A1/ja not_active Ceased
- 2008-03-25 CN CN200880010127.4A patent/CN101647320B/zh not_active Expired - Fee Related
- 2008-03-25 EP EP08722780A patent/EP2136606B1/en not_active Not-in-force
- 2008-03-25 US US12/532,976 patent/US8030125B2/en not_active Expired - Fee Related
- 2008-03-25 KR KR1020097022309A patent/KR101441159B1/ko not_active Expired - Fee Related
- 2008-03-27 TW TW097111060A patent/TWI442815B/zh not_active IP Right Cessation
-
2011
- 2011-08-30 US US13/221,068 patent/US8324627B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008243582A (ja) | 2008-10-09 |
| WO2008123244A1 (ja) | 2008-10-16 |
| TW200904241A (en) | 2009-01-16 |
| US8030125B2 (en) | 2011-10-04 |
| US8324627B2 (en) | 2012-12-04 |
| US20110309366A1 (en) | 2011-12-22 |
| CN101647320B (zh) | 2012-12-12 |
| KR101441159B1 (ko) | 2014-09-17 |
| US20100072464A1 (en) | 2010-03-25 |
| JP5372337B2 (ja) | 2013-12-18 |
| KR20090128511A (ko) | 2009-12-15 |
| EP2136606A1 (en) | 2009-12-23 |
| EP2136606A4 (en) | 2011-04-06 |
| CN101647320A (zh) | 2010-02-10 |
| EP2136606B1 (en) | 2012-05-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |