EP2136606A4 - ORGANIC THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, IMAGE DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME - Google Patents

ORGANIC THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, IMAGE DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME

Info

Publication number
EP2136606A4
EP2136606A4 EP08722780A EP08722780A EP2136606A4 EP 2136606 A4 EP2136606 A4 EP 2136606A4 EP 08722780 A EP08722780 A EP 08722780A EP 08722780 A EP08722780 A EP 08722780A EP 2136606 A4 EP2136606 A4 EP 2136606A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
same
thin film
display panel
image display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP08722780A
Other languages
German (de)
French (fr)
Other versions
EP2136606B1 (en
EP2136606A1 (en
Inventor
Kenji Kasahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of EP2136606A1 publication Critical patent/EP2136606A1/en
Publication of EP2136606A4 publication Critical patent/EP2136606A4/en
Application granted granted Critical
Publication of EP2136606B1 publication Critical patent/EP2136606B1/en
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
EP08722780A 2007-03-27 2008-03-25 Organic thin film transistor substrate, its manufacturing method, image display panel, and its manufacturing method Not-in-force EP2136606B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007082278A JP5372337B2 (en) 2007-03-27 2007-03-27 Organic thin film transistor substrate and manufacturing method thereof, and image display panel and manufacturing method thereof
PCT/JP2008/055570 WO2008123244A1 (en) 2007-03-27 2008-03-25 Organic thin film transistor substrate, its manufacturing method, image display panel, and its manufacturing method

Publications (3)

Publication Number Publication Date
EP2136606A1 EP2136606A1 (en) 2009-12-23
EP2136606A4 true EP2136606A4 (en) 2011-04-06
EP2136606B1 EP2136606B1 (en) 2012-05-16

Family

ID=39830737

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08722780A Not-in-force EP2136606B1 (en) 2007-03-27 2008-03-25 Organic thin film transistor substrate, its manufacturing method, image display panel, and its manufacturing method

Country Status (7)

Country Link
US (2) US8030125B2 (en)
EP (1) EP2136606B1 (en)
JP (1) JP5372337B2 (en)
KR (1) KR101441159B1 (en)
CN (1) CN101647320B (en)
TW (1) TWI442815B (en)
WO (1) WO2008123244A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4953166B2 (en) * 2007-11-29 2012-06-13 カシオ計算機株式会社 Manufacturing method of display panel
US8617920B2 (en) * 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101084192B1 (en) * 2010-02-16 2011-11-17 삼성모바일디스플레이주식회사 Organic light emitting display
CN102844875A (en) 2010-04-22 2012-12-26 出光兴产株式会社 Organic Thin Film Transistor
KR101839930B1 (en) * 2010-12-29 2018-04-27 삼성디스플레이 주식회사 Organic light emitting display apparatus and method of manufacturing organic light emitting display apparatus
DE102011086689B4 (en) * 2011-11-21 2017-02-16 Osram Oled Gmbh Method for producing an optoelectronic component
US9012259B2 (en) 2013-01-17 2015-04-21 Stmicroelectronics S.R.L. Thin film transistors formed by organic semiconductors using a hybrid patterning regime
CN103560211B (en) * 2013-11-13 2017-04-05 深圳市华星光电技术有限公司 The preparation method of organic electroluminescence device and the organic electroluminescence device of making
CN105742311B (en) * 2014-12-11 2018-11-13 昆山国显光电有限公司 A kind of display device and preparation method thereof
CN111837458B (en) * 2018-03-02 2023-06-13 夏普株式会社 Display device and method for manufacturing the same
JP7138673B2 (en) * 2020-03-31 2022-09-16 キヤノントッキ株式会社 Electronic device manufacturing method, measuring method, and film forming apparatus
TWI787720B (en) 2021-01-25 2022-12-21 友達光電股份有限公司 Organic semiconductor substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060220542A1 (en) * 2005-03-30 2006-10-05 Suh Min-Chul Flat panel display and method of manufacturing the same
US20070007515A1 (en) * 2005-07-06 2007-01-11 Suh Min-Chul Flat panel display and method of fabricating the same

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JP2001500059A (en) 1996-09-10 2001-01-09 インペリアル・ケミカル・インダストリーズ・ピーエルシー Fluorination catalyst and production method
EP0940797B1 (en) 1997-08-21 2005-03-23 Seiko Epson Corporation Active matrix display
US6661180B2 (en) * 2001-03-22 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method for the same and electronic apparatus
JP2004171861A (en) 2002-11-19 2004-06-17 Seiko Epson Corp Method of manufacturing organic EL device, organic EL device, and electronic equipment
KR100603349B1 (en) 2004-06-17 2006-07-20 삼성에스디아이 주식회사 Thin film transistor, method of manufacturing same and flat panel display device having same
KR100659061B1 (en) * 2004-09-20 2006-12-19 삼성에스디아이 주식회사 Organic thin film transistor and flat panel display device having same
JP4845491B2 (en) * 2004-11-30 2011-12-28 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US7985677B2 (en) 2004-11-30 2011-07-26 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7737629B2 (en) * 2005-03-31 2010-06-15 Seiko Epson Corporation Light emitting device, method of manufacturing the same, and electronic apparatus
JP2006310289A (en) * 2005-03-31 2006-11-09 Seiko Epson Corp LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE
JP2006294484A (en) * 2005-04-13 2006-10-26 Konica Minolta Holdings Inc Organic electroluminescent element, its manufacturing method and organic electroluminescent display device
KR100626082B1 (en) * 2005-07-06 2006-09-20 삼성에스디아이 주식회사 Flat Panel Display

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060220542A1 (en) * 2005-03-30 2006-10-05 Suh Min-Chul Flat panel display and method of manufacturing the same
US20070007515A1 (en) * 2005-07-06 2007-01-11 Suh Min-Chul Flat panel display and method of fabricating the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2008123244A1 *

Also Published As

Publication number Publication date
US20110309366A1 (en) 2011-12-22
US20100072464A1 (en) 2010-03-25
WO2008123244A1 (en) 2008-10-16
JP2008243582A (en) 2008-10-09
CN101647320A (en) 2010-02-10
US8030125B2 (en) 2011-10-04
TWI442815B (en) 2014-06-21
JP5372337B2 (en) 2013-12-18
US8324627B2 (en) 2012-12-04
CN101647320B (en) 2012-12-12
EP2136606B1 (en) 2012-05-16
KR101441159B1 (en) 2014-09-17
TW200904241A (en) 2009-01-16
KR20090128511A (en) 2009-12-15
EP2136606A1 (en) 2009-12-23

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