JP5366405B2 - 遮光瞳を有する高開口率対物光学系 - Google Patents

遮光瞳を有する高開口率対物光学系 Download PDF

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Publication number
JP5366405B2
JP5366405B2 JP2007547354A JP2007547354A JP5366405B2 JP 5366405 B2 JP5366405 B2 JP 5366405B2 JP 2007547354 A JP2007547354 A JP 2007547354A JP 2007547354 A JP2007547354 A JP 2007547354A JP 5366405 B2 JP5366405 B2 JP 5366405B2
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Prior art keywords
mirror
optical system
objective optical
concave
image
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Expired - Fee Related
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JP2007547354A
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Japanese (ja)
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JP2008525831A (ja
JP2008525831A5 (enExample
Inventor
ハンス−ユルゲン マン
デイヴィッド シェイファー
ヴィルヘルム ウルリッヒ
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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Priority claimed from DE102005042005A external-priority patent/DE102005042005A1/de
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2007547354A 2004-12-23 2005-12-22 遮光瞳を有する高開口率対物光学系 Expired - Fee Related JP5366405B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
DE102004063313.4 2004-12-23
DE102004063313 2004-12-23
US66503605P 2005-03-24 2005-03-24
US60/665,036 2005-03-24
US69545505P 2005-06-30 2005-06-30
US60/695,455 2005-06-30
US69890905P 2005-07-13 2005-07-13
US60/698,909 2005-07-13
DE102005042005.2 2005-09-05
DE102005042005A DE102005042005A1 (de) 2004-12-23 2005-09-05 Hochaperturiges Objektiv mit obskurierter Pupille
PCT/EP2005/013841 WO2006069725A1 (de) 2004-12-23 2005-12-22 Hochaperturiges objektiv mit obskurierter pupille

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012054126A Division JP5996892B2 (ja) 2004-12-23 2012-03-12 遮光瞳を有する高開口率対物光学系

Publications (3)

Publication Number Publication Date
JP2008525831A JP2008525831A (ja) 2008-07-17
JP2008525831A5 JP2008525831A5 (enExample) 2009-02-19
JP5366405B2 true JP5366405B2 (ja) 2013-12-11

Family

ID=35888429

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2007547354A Expired - Fee Related JP5366405B2 (ja) 2004-12-23 2005-12-22 遮光瞳を有する高開口率対物光学系
JP2012054126A Expired - Lifetime JP5996892B2 (ja) 2004-12-23 2012-03-12 遮光瞳を有する高開口率対物光学系
JP2014001941A Expired - Fee Related JP5762579B2 (ja) 2004-12-23 2014-01-08 遮光瞳を有する高開口率対物光学系

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2012054126A Expired - Lifetime JP5996892B2 (ja) 2004-12-23 2012-03-12 遮光瞳を有する高開口率対物光学系
JP2014001941A Expired - Fee Related JP5762579B2 (ja) 2004-12-23 2014-01-08 遮光瞳を有する高開口率対物光学系

Country Status (5)

Country Link
EP (1) EP1828829B1 (enExample)
JP (3) JP5366405B2 (enExample)
KR (1) KR101148589B1 (enExample)
CN (1) CN101713864B (enExample)
WO (1) WO2006069725A1 (enExample)

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US7884998B2 (en) * 2003-02-21 2011-02-08 Kla - Tencor Corporation Catadioptric microscope objective employing immersion liquid for use in broad band microscopy
KR100962911B1 (ko) 2005-09-13 2010-06-10 칼 짜이스 에스엠테 아게 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법
DE102006014380A1 (de) * 2006-03-27 2007-10-11 Carl Zeiss Smt Ag Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille
JP5479890B2 (ja) 2006-04-07 2014-04-23 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影光学システム、装置、及び製造方法
DE102006047387A1 (de) * 2006-10-06 2008-04-10 Carl Zeiss Smt Ag Kompaktes 3-Spiegel-Objektiv
US7929114B2 (en) 2007-01-17 2011-04-19 Carl Zeiss Smt Gmbh Projection optics for microlithography
EP1950594A1 (de) 2007-01-17 2008-07-30 Carl Zeiss SMT AG Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik
DE102007045396A1 (de) 2007-09-21 2009-04-23 Carl Zeiss Smt Ag Bündelführender optischer Kollektor zur Erfassung der Emission einer Strahlungsquelle
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DE102007051671A1 (de) 2007-10-26 2009-05-07 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
CN102819197B (zh) 2007-10-26 2016-06-22 卡尔蔡司Smt有限责任公司 成像光学系统、投射曝光设备、微结构部件及其产生方法
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DE102008046699B4 (de) 2008-09-10 2014-03-13 Carl Zeiss Smt Gmbh Abbildende Optik
WO2010099899A1 (en) 2009-03-06 2010-09-10 Carl Zeiss Smt Ag Imaging optics and projection exposure installation for microlithography with an imaging optics of this type
WO2010115500A1 (en) 2009-03-30 2010-10-14 Carl Zeiss Smt Ag Imaging optics and projection exposure installation for microlithography with an imaging optics of this type
WO2010148293A2 (en) 2009-06-19 2010-12-23 Kla-Tencor Corporation Euv high throughput inspection system for defect detection on patterned euv masks, mask blanks, and wafers
DE102009030501A1 (de) 2009-06-24 2011-01-05 Carl Zeiss Smt Ag Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Beleuchtungsoptik zur Ausleuchtung eines Objektfeldes
DE102009035583A1 (de) 2009-07-29 2011-02-03 Carl Zeiss Sms Gmbh Vergrößernde abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik
DE102009035582A1 (de) * 2009-07-29 2011-02-03 Carl Zeiss Sms Gmbh Vergrößernde abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik
DE102010038748A1 (de) 2009-08-07 2011-03-24 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines Spiegels mit wenigstens zwei Spiegelflächen, Spiegel einer Projektionsbelichtungsanlage der Mikrolithographie und Projektionsbelichtungsanlage
DE102009049640B4 (de) 2009-10-15 2012-05-31 Carl Zeiss Smt Gmbh Projektionsobjektiv für eine mikrolithographische EUV-Projektionsbelichtungsanlage
DE102009046685A1 (de) * 2009-11-13 2011-05-26 Carl Zeiss Smt Gmbh Abbildende Optik
DE102010039745A1 (de) * 2010-08-25 2012-03-01 Carl Zeiss Smt Gmbh Abbildende Optik
DE102010040108A1 (de) 2010-09-01 2012-03-01 Carl Zeiss Smt Gmbh Obskurationsblende
US9075322B2 (en) * 2010-09-10 2015-07-07 Nikon Corporation Reflective imaging optical system, exposure apparatus, and method for producing device
DE102010041746A1 (de) * 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung
US8837041B2 (en) 2010-11-23 2014-09-16 Carl Zeiss Smt Gmbh Magnifying imaging optical system and metrology system with an imaging optical system of this type
DE102011084255A1 (de) 2010-11-24 2012-05-24 Carl Zeiss Smt Gmbh Vergrößernde abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik
DE102011003302A1 (de) 2011-01-28 2012-08-02 Carl Zeiss Smt Gmbh Vergrößerte abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik
DE102011006468B4 (de) 2011-03-31 2014-08-28 Carl Zeiss Smt Gmbh Vermessung eines abbildenden optischen Systems durch Überlagerung von Mustern
JP6116128B2 (ja) 2011-04-11 2017-04-19 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および方法
DE102013213842A1 (de) 2013-07-16 2015-01-22 Carl Zeiss Smt Gmbh Optisches Bauelement
DE102015226531A1 (de) * 2015-04-14 2016-10-20 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik
KR102868300B1 (ko) 2015-05-28 2025-10-13 칼 짜이스 에스엠테 게엠베하 대물 필드를 이미지 필드 내로 이미징하기 위한 이미징 광학 유닛, 및 이러한 이미징 광학 유닛을 포함하는 투영 노광 장치
WO2017029383A1 (de) 2015-08-20 2017-02-23 Carl Zeiss Smt Gmbh Euv-lithographieanlage und verfahren
DE102015215948A1 (de) 2015-08-20 2015-10-15 Carl Zeiss Smt Gmbh Obskurationsvorrichtung
DE102015219671A1 (de) 2015-10-12 2017-04-27 Carl Zeiss Smt Gmbh Optische Baugruppe, Projektionssystem, Metrologiesystem und EUV-Lithographieanlage
DE102015221983A1 (de) * 2015-11-09 2017-05-11 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik
DE102017216458A1 (de) * 2017-09-18 2019-03-21 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines Spiegels als optischer Komponente für ein optisches System einer Projektionsbelichtungsanlage für die Projektionslithographie
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Also Published As

Publication number Publication date
JP5996892B2 (ja) 2016-09-21
KR20070084117A (ko) 2007-08-24
EP1828829A1 (de) 2007-09-05
EP1828829B1 (de) 2012-08-22
JP2008525831A (ja) 2008-07-17
JP2014123131A (ja) 2014-07-03
JP2012168541A (ja) 2012-09-06
CN101713864A (zh) 2010-05-26
JP5762579B2 (ja) 2015-08-12
CN101713864B (zh) 2013-10-30
KR101148589B1 (ko) 2012-05-22
WO2006069725A1 (de) 2006-07-06

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