JP5357509B2 - 検査装置、検査方法および検査装置の校正システム - Google Patents

検査装置、検査方法および検査装置の校正システム Download PDF

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Publication number
JP5357509B2
JP5357509B2 JP2008281498A JP2008281498A JP5357509B2 JP 5357509 B2 JP5357509 B2 JP 5357509B2 JP 2008281498 A JP2008281498 A JP 2008281498A JP 2008281498 A JP2008281498 A JP 2008281498A JP 5357509 B2 JP5357509 B2 JP 5357509B2
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JP
Japan
Prior art keywords
inspection apparatus
wafer
signal
inspection
haze
Prior art date
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Expired - Fee Related
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JP2008281498A
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English (en)
Japanese (ja)
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JP2010109257A (ja
JP2010109257A5 (https=
Inventor
和典 根本
玲 浜松
英夫 太田
健次 岡
孝広 神宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2008281498A priority Critical patent/JP5357509B2/ja
Priority to US13/127,051 priority patent/US8831899B2/en
Priority to PCT/JP2009/067837 priority patent/WO2010050365A1/ja
Publication of JP2010109257A publication Critical patent/JP2010109257A/ja
Publication of JP2010109257A5 publication Critical patent/JP2010109257A5/ja
Application granted granted Critical
Publication of JP5357509B2 publication Critical patent/JP5357509B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/93—Detection standards; Calibrating baseline adjustment, drift correction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP2008281498A 2008-10-31 2008-10-31 検査装置、検査方法および検査装置の校正システム Expired - Fee Related JP5357509B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008281498A JP5357509B2 (ja) 2008-10-31 2008-10-31 検査装置、検査方法および検査装置の校正システム
US13/127,051 US8831899B2 (en) 2008-10-31 2009-10-15 Inspecting apparatus and an inspecting method
PCT/JP2009/067837 WO2010050365A1 (ja) 2008-10-31 2009-10-15 暗視野検査装置校正用基準ウエハ、暗視野検査装置校正用基準ウエハの製造方法、暗視野検査装置の校正方法、暗視野検査装置およびウエハ検査方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008281498A JP5357509B2 (ja) 2008-10-31 2008-10-31 検査装置、検査方法および検査装置の校正システム

Publications (3)

Publication Number Publication Date
JP2010109257A JP2010109257A (ja) 2010-05-13
JP2010109257A5 JP2010109257A5 (https=) 2011-04-14
JP5357509B2 true JP5357509B2 (ja) 2013-12-04

Family

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Family Applications (1)

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JP2008281498A Expired - Fee Related JP5357509B2 (ja) 2008-10-31 2008-10-31 検査装置、検査方法および検査装置の校正システム

Country Status (3)

Country Link
US (1) US8831899B2 (https=)
JP (1) JP5357509B2 (https=)
WO (1) WO2010050365A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
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US20110151671A1 (en) * 2009-12-17 2011-06-23 Rohm And Haas Electronic Materials Llc method of texturing semiconductor substrates
WO2012102755A1 (en) * 2011-01-28 2012-08-02 Applied Materials, Inc. Carbon addition for low resistivity in situ doped silicon epitaxy
JP5710314B2 (ja) * 2011-02-25 2015-04-30 株式会社東芝 マスク検査方法およびその装置
JP5581282B2 (ja) * 2011-08-31 2014-08-27 株式会社日立ハイテクノロジーズ 表面形状計測装置
CN102435616B (zh) * 2011-09-08 2014-02-05 上海华力微电子有限公司 一种新型晶边检测仪稳定性的监控方法
JP6259669B2 (ja) * 2014-01-20 2018-01-10 株式会社日立ハイテクノロジーズ 検査装置および計測装置
KR102140789B1 (ko) * 2014-02-17 2020-08-03 삼성전자주식회사 결정 품질 평가장치, 및 그것을 포함한 반도체 발광소자의 제조 장치 및 제조 방법
JP6299668B2 (ja) * 2015-05-13 2018-03-28 信越半導体株式会社 ヘイズの評価方法
US10564096B2 (en) * 2015-09-14 2020-02-18 University Of Florida Research Foundation, Incorporated Method for measuring bi-directional reflectance distribution function (BRDF) and associated device
JP6638636B2 (ja) * 2016-12-13 2020-01-29 信越半導体株式会社 ポリマーの保護性評価方法
JP2020518812A (ja) 2017-05-05 2020-06-25 スリーエム イノベイティブ プロパティズ カンパニー 微小散乱測定システム、及びその使用方法
KR102037748B1 (ko) * 2017-12-06 2019-11-29 에스케이실트론 주식회사 웨이퍼의 결함 영역을 평가하는 방법
US20210375651A1 (en) * 2020-05-28 2021-12-02 Kla Corporation Fleet Matching Of Semiconductor Metrology Tools Without Dedicated Quality Control Wafers
US11230393B1 (en) * 2020-07-23 2022-01-25 Pratt & Whitney Canada Corp. Methods for measuring part size and runout
JP7482016B2 (ja) * 2020-12-17 2024-05-13 株式会社東芝 故障検知装置、方法およびプログラム
TWI770906B (zh) * 2021-03-26 2022-07-11 環球晶圓股份有限公司 晶圓表面缺陷檢測方法及其裝置
TWI767642B (zh) 2021-04-01 2022-06-11 環球晶圓股份有限公司 晶圓檢測方法及其裝置
WO2022241672A1 (zh) * 2021-05-19 2022-11-24 浙江大学 共聚焦扫描式暗场显微成像方法与装置
EP4468326A1 (de) * 2023-05-24 2024-11-27 Siltronic AG Referenz zur bestimmung der höhenvariation einer oberfläche einer scheibe aus halbleitermaterial und verfahren zur bestimmung der oberflächenrauheit von scheiben aus halbleitermaterial
CN118500302B (zh) * 2024-07-16 2024-09-17 国鲸科技(广东横琴粤澳深度合作区)有限公司 一种基于光学测量的透明基材表面粗糙度检测方法

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JP3055598B2 (ja) * 1994-09-16 2000-06-26 信越半導体株式会社 シリコンウエーハの評価方法
JP2888217B2 (ja) 1996-12-12 1999-05-10 日本電気株式会社 洗浄用薬液の濃度管理方法およびシリコンウェハ洗浄装置
US5955654A (en) * 1997-08-07 1999-09-21 Vlsi Standards, Inc. Calibration standard for microroughness measuring instruments
US6016684A (en) 1998-03-10 2000-01-25 Vlsi Standards, Inc. Certification of an atomic-level step-height standard and instrument calibration with such standards
JP2000031224A (ja) * 1998-07-08 2000-01-28 Shin Etsu Handotai Co Ltd 半導体ウエーハの評価方法
JP3212958B2 (ja) * 1998-12-11 2001-09-25 九州日本電気株式会社 薬液濃度制御装置
US6552337B1 (en) 1999-11-02 2003-04-22 Samsung Electronics Co., Ltd. Methods and systems for measuring microroughness of a substrate combining particle counter and atomic force microscope measurements
JP2001338959A (ja) * 2000-05-30 2001-12-07 Toshiba Corp 半導体基板の評価方法およびその装置
JP3950622B2 (ja) 2000-10-25 2007-08-01 スピードファム株式会社 ナノトポグラフィ評価用基準ウェーハとその製造方法
JP2003240723A (ja) * 2002-02-19 2003-08-27 Mitsubishi Electric Corp 欠陥検査方法及び欠陥検査装置
US6674092B1 (en) 2002-07-12 2004-01-06 Lsi Logic Corporation Thin film CMOS calibration standard having protective cover layer
US20060192949A1 (en) * 2004-12-19 2006-08-31 Bills Richard E System and method for inspecting a workpiece surface by analyzing scattered light in a back quartersphere region above the workpiece
JP4385978B2 (ja) * 2005-03-28 2009-12-16 信越半導体株式会社 半導体ウエーハの評価方法及び製造方法
JP4706304B2 (ja) * 2005-03-30 2011-06-22 信越半導体株式会社 半導体ウエーハの評価方法及び評価装置

Also Published As

Publication number Publication date
US8831899B2 (en) 2014-09-09
JP2010109257A (ja) 2010-05-13
US20110276299A1 (en) 2011-11-10
WO2010050365A1 (ja) 2010-05-06

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