JP5352040B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5352040B2
JP5352040B2 JP2005241697A JP2005241697A JP5352040B2 JP 5352040 B2 JP5352040 B2 JP 5352040B2 JP 2005241697 A JP2005241697 A JP 2005241697A JP 2005241697 A JP2005241697 A JP 2005241697A JP 5352040 B2 JP5352040 B2 JP 5352040B2
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Japan
Prior art keywords
laser
film
region
substrate
semiconductor
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Expired - Fee Related
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JP2005241697A
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Japanese (ja)
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JP2006093677A5 (enExample
JP2006093677A (ja
Inventor
幸一郎 田中
敦生 磯部
良明 山本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005241697A priority Critical patent/JP5352040B2/ja
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Publication of JP2006093677A5 publication Critical patent/JP2006093677A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2005241697A 2004-08-23 2005-08-23 半導体装置の作製方法 Expired - Fee Related JP5352040B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005241697A JP5352040B2 (ja) 2004-08-23 2005-08-23 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004243044 2004-08-23
JP2004243044 2004-08-23
JP2005241697A JP5352040B2 (ja) 2004-08-23 2005-08-23 半導体装置の作製方法

Publications (3)

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JP2006093677A JP2006093677A (ja) 2006-04-06
JP2006093677A5 JP2006093677A5 (enExample) 2008-09-04
JP5352040B2 true JP5352040B2 (ja) 2013-11-27

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JP2005241697A Expired - Fee Related JP5352040B2 (ja) 2004-08-23 2005-08-23 半導体装置の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1728271B1 (en) 2004-03-26 2016-06-08 Semiconductor Energy Laboratory Co, Ltd. Laser irradiation method and laser irradiation apparatus
KR101284201B1 (ko) 2005-05-02 2013-07-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 조사 장치 및 레이저 조사 방법
JP5448315B2 (ja) * 2006-08-31 2014-03-19 株式会社半導体エネルギー研究所 結晶性半導体膜の作製方法
KR101200945B1 (ko) 2006-08-31 2012-11-13 삼성디스플레이 주식회사 다결정 실리콘층의 형성 방법 및 이를 이용한 박막트랜지스터의 제조 방법
JP4852400B2 (ja) * 2006-11-27 2012-01-11 シャープ株式会社 半導体記憶装置及び半導体装置並びに表示装置、液晶表示装置及び受像機
JP5171074B2 (ja) * 2007-03-13 2013-03-27 住友重機械工業株式会社 レーザアニール方法
CN102077318B (zh) * 2008-06-26 2013-03-27 株式会社Ihi 激光退火方法及装置
JP2010079984A (ja) * 2008-09-25 2010-04-08 Semiconductor Energy Lab Co Ltd 半導体記憶装置の駆動方法
KR102431925B1 (ko) * 2020-08-12 2022-08-11 김성진 전기적 성능을 개선하기 위한 펨토초 레이저 공정을 이용한 tft 제작 방법
CN117512509B (zh) * 2023-11-07 2025-10-24 镇江晶鼎光电科技有限公司 一种异型金属薄膜光刻工艺

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186189A (ja) * 1997-12-17 1999-07-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP4056684B2 (ja) * 2000-07-28 2008-03-05 株式会社半導体エネルギー研究所 レーザー処理方法
JP2002164276A (ja) * 2000-11-28 2002-06-07 Nikon Corp 焦点合わせ方法、アライメント方法、露光方法、露光装置、並びにデバイスの製造方法
JP4289816B2 (ja) * 2001-03-22 2009-07-01 シャープ株式会社 半導体装置及びその製造方法
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
JP3910524B2 (ja) * 2001-11-09 2007-04-25 株式会社半導体エネルギー研究所 レーザ照射方法および半導体装置の作製方法
JP2003229359A (ja) * 2001-11-29 2003-08-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4212830B2 (ja) * 2002-05-17 2009-01-21 シャープ株式会社 シリコン結晶化方法
JP4370554B2 (ja) * 2002-06-14 2009-11-25 株式会社ニコン オートフォーカス装置およびオートフォーカス付き顕微鏡
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
JP2004103628A (ja) * 2002-09-05 2004-04-02 Hitachi Ltd レーザアニール装置及びｔｆｔ基板のレーザアニール方法
JP2004179356A (ja) * 2002-11-27 2004-06-24 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法及び半導体装置
JP2004193201A (ja) * 2002-12-09 2004-07-08 Semiconductor Energy Lab Co Ltd レーザー照射方法
JP4671600B2 (ja) * 2002-12-27 2011-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法

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