JP5341966B2 - パターン転写方法及びパターン転写装置、これを適用したフレキシブルディスプレイパネル、フレキシブル太陽電池、電子本、薄膜トランジスター、電磁波遮蔽シート、フレキシブル印刷回路基板 - Google Patents
パターン転写方法及びパターン転写装置、これを適用したフレキシブルディスプレイパネル、フレキシブル太陽電池、電子本、薄膜トランジスター、電磁波遮蔽シート、フレキシブル印刷回路基板 Download PDFInfo
- Publication number
- JP5341966B2 JP5341966B2 JP2011218441A JP2011218441A JP5341966B2 JP 5341966 B2 JP5341966 B2 JP 5341966B2 JP 2011218441 A JP2011218441 A JP 2011218441A JP 2011218441 A JP2011218441 A JP 2011218441A JP 5341966 B2 JP5341966 B2 JP 5341966B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- substrate
- flexible substrate
- pattern material
- flexible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 175
- 239000010409 thin film Substances 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 452
- 239000000463 material Substances 0.000 claims abstract description 301
- 239000007787 solid Substances 0.000 claims abstract description 27
- 230000001678 irradiating effect Effects 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims description 62
- 239000007790 solid phase Substances 0.000 claims description 31
- 230000002209 hydrophobic effect Effects 0.000 claims description 22
- 239000011247 coating layer Substances 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 18
- 230000001939 inductive effect Effects 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 239000002861 polymer material Substances 0.000 claims description 9
- 239000003960 organic solvent Substances 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 6
- 125000002524 organometallic group Chemical group 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 abstract description 23
- 238000003825 pressing Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 38
- 239000013545 self-assembled monolayer Substances 0.000 description 32
- 239000007788 liquid Substances 0.000 description 26
- 230000008569 process Effects 0.000 description 22
- 230000006698 induction Effects 0.000 description 16
- 239000002245 particle Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- 239000000047 product Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 238000010924 continuous production Methods 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 6
- 239000002105 nanoparticle Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000000813 microcontact printing Methods 0.000 description 3
- 238000001127 nanoimprint lithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 108010038083 amyloid fibril protein AS-SAM Proteins 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000002094 self assembled monolayer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/207—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a prefabricated paste pattern, ink pattern or powder pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1173—Differences in wettability, e.g. hydrophilic or hydrophobic areas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/1545—Continuous processing, i.e. involving rolls moving a band-like or solid carrier along a continuous production path
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
Description
20、100 基板
30 プラズマ誘発層
31 プラズマ誘発層のパーティクル
40 洗滌液
50、110 パターン物質
60 疎水性が弱い物質
80 対象基板
90、120 表面モールド
111 パターン物質の所定領域
200 柔軟基板
300 移動部
310 ローラー
400 レーザー照射部
500 レーザーソース
510 スキャナ
R ロール
A、B ローラー
Claims (14)
- 基板上にパターン物質を形成する第1段階と、
前記パターン物質を固相状態に硬化させる第2段階と、
前記硬化された固相状態のパターン物質にレーザー光を照射して、前記パターン物質をパターニングする第3段階と、
前記パターニングされた固相状態のパターン物質と柔軟基板をお互いに突き合わせて加圧して、前記パターン物質から前記柔軟基板方向に、または前記柔軟基板から前記パターン物質方向にレーザー光を照射して、前記パターン物質と柔軟基板を突き合わせた部位で発生する前記柔軟基板の粘性力によって、前記パターン物質を前記柔軟基板に転写する第4段階と、を含み、
前記柔軟基板の熱伝導率は、前記固相状態のパターン物質の熱伝導率に比べて低い、パターン転写方法。 - 基板上にパターン物質を形成する第1段階と、
前記パターン物質の所定領域にレーザー光を照射して、前記パターン物質の所定領域を固相状態に硬化させる第2段階と、
前記所定領域以外のパターン物質を有機溶媒によって除去する第3段階と、
前記パターン物質の所定領域を固相状態に再硬化させる第4段階と、
前記再硬化された固相状態のパターン物質と柔軟基板をお互いに突き合わせて加圧して、前記パターン物質から前記柔軟基板方向に、または前記柔軟基板から前記パターン物質方向にレーザー光を照射して、前記パターン物質と柔軟基板を突き合わせた部位で発生する前記柔軟基板の粘性力によって、前記パターン物質を前記柔軟基板に転写する第5段階と、
を含み、
前記柔軟基板の熱伝導率は、前記固相状態のパターン物質の熱伝導率に比べて低い、パターン転写方法。 - ポリマー物質を含んで、一面がロールに絡められている柔軟基板と、
前記柔軟基板の下部にお互いに突き合わせて加圧されるように配置されて、その上面に形成されたパターン物質が固相状態に硬化された後、レーザー光によってパターニングされている基板と、
前記基板の下面に配置されて前記基板を移動させる移動部と、
前記移動部から前記柔軟基板方向にレーザー光を照射するレーザー照射部と、
を含んで、
前記移動部を作動させて前記基板が移動されながら、前記柔軟基板と前記基板がお互いに突き合わせて加圧され、
前記レーザー照射部からの前記レーザー光によって前記パターン物質と前記柔軟基板を突き合わせた部位で発生する前記柔軟基板の粘性力によって前記パターン物質が前記柔軟基板に転写され、
前記柔軟基板の熱伝導率は、前記パターン物質の熱伝導率に比べて低い、パターン転写装置。 - 前記レーザー照射部は、レーザーをラインビームの形態で照射する、ことを特徴とする請求項3に記載のパターン転写装置。
- 基板上に疎水性コーティング層を形成した後レーザー応用プラズマを利用して、前記疎水性コーティング層を選択的に除去して表面モールドを形成する第1段階と、
前記表面モールド上に、パターン物質を加えて乾燥させた後高温焼結させて、パターンを形成する第2段階と、
前記表面モールドと対象基板をお互いに突き合わせて加圧して、前記表面モールドから前記対象基板方向に、または前記対象基板から前記表面モールド方向にレーザーを照射することによって前記表面モールド上のパターン物質と前記対象基板を突き合わせた部位に発生する対象基板の粘性力によって前記パターン物質が対象基板に転写される第3段階と、を含み、
前記対象基板の熱伝導率は、前記パターン物質の熱伝導率に比べて低い、パターン転写方法。 - 前記第1段階は、
基板上に疎水性コーティング層を形成する段階と、
前記疎水性コーティング層上にプラズマ誘発層をコーティングする段階と、
レーザーを前記基板から前記プラズマ誘発層方向に照射して前記疎水性コーティング層を選択的に除去する段階と、
前記プラズマ誘発層を除去する段階と、
でなされる、ことを特徴とする請求項5に記載のパターン転写方法。 - 前記第2段階で使用される前記パターン物質は、親水性の有機金属インクである、ことを特徴とする請求項5に記載のパターン転写方法。
- ポリマー物質を含んで、一面がロールに絡められている柔軟基板と、
上面に形成された疎水性コーティング層が選択的に除去された後パターン物質がコーティングされ、前記柔軟基板の下部にお互いに触れ合ったまま加圧されるように配置される基板と、
前記基板の下面に配置されて前記基板を移動させる移動部と、
前記基板から前記柔軟基板方向に、または前記柔軟基板から前記基板方向にレーザーを照射するレーザー照射部を含み、
前記移動部を作動させて前記基板が移動されながら、前記柔軟基板と前記基板がお互いに突き合わせられて加圧され、
前記レーザー照射部からの前記レーザーによって前記パターン物質と前記柔軟基板を突き合わせた部位で発生する前記柔軟基板の粘性力によって前記パターン物質が前記柔軟基板に転写され、
前記柔軟基板の熱伝導率は、前記パターン物質の熱伝導率に比べて低い、パターン転写装置。 - 請求項1、請求項2または請求項5のうちで何れか一つに記載したパターン転写方法によって転写されたパターンによって形成される電極を含むフレキシブルディスプレイパネル。
- 請求項1、請求項2または請求項5のうちで何れか一つに記載したパターン転写方法によって転写されたパターンによって形成される電極を含むフレキシブル太陽電池。
- 請求項1、請求項2または請求項5のうちで何れか一つに記載したパターン転写方法によって転写されたパターンによって形成される電極を含む電子本。
- 請求項1、請求項2または請求項5のうちで何れか一つに記載したパターン転写方法によって転写されたパターンを有する電磁波遮蔽シート。
- 請求項1、請求項2または請求項5のうちで何れか一つに記載したパターン転写方法によって転写されたパターンによって形成されるゲート電極、ソース電極、及びドレイン電極を含む薄膜トランジスター。
- 請求項1、請求項2または請求項5のうちで何れか一つに記載したパターン転写方法によって転写されたパターンによって形成される伝導性配線を含むフレキシブル印刷回路基板。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0103485 | 2010-10-22 | ||
KR10-2010-0103480 | 2010-10-22 | ||
KR1020100103480A KR101226086B1 (ko) | 2010-10-22 | 2010-10-22 | 패턴 제조 방법 및 패턴 전사 장치 |
KR1020100103485A KR101141026B1 (ko) | 2010-10-22 | 2010-10-22 | 소수성 코팅층 선택적 제거 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012094855A JP2012094855A (ja) | 2012-05-17 |
JP5341966B2 true JP5341966B2 (ja) | 2013-11-13 |
Family
ID=44719735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011218441A Expired - Fee Related JP5341966B2 (ja) | 2010-10-22 | 2011-09-30 | パターン転写方法及びパターン転写装置、これを適用したフレキシブルディスプレイパネル、フレキシブル太陽電池、電子本、薄膜トランジスター、電磁波遮蔽シート、フレキシブル印刷回路基板 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2444844A3 (ja) |
JP (1) | JP5341966B2 (ja) |
CN (1) | CN102452239A (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107253394B (zh) * | 2012-08-06 | 2019-05-03 | 株式会社尼康 | 转印装置以及基板处理装置 |
US9627211B2 (en) | 2012-09-18 | 2017-04-18 | Applied Materials, Inc. | Tape assisted single step peel-off on sin layer above metal electrodes |
EP2915414B1 (en) * | 2012-10-31 | 2020-10-07 | HP Indigo B.V. | Method and apparatus for forming on a substrate a pattern of a material |
CN103663361B (zh) * | 2013-12-30 | 2016-03-23 | 哈尔滨理工大学 | 一种硅基片或陶瓷基片的柔性机械光刻剥离工艺方法 |
AU2015276028A1 (en) * | 2014-06-20 | 2017-02-02 | Fundacio Institut Catala De Nanociencia I Nanotecnologia | Method of forming an electronic device on a flexible substrate |
KR101629468B1 (ko) * | 2015-01-30 | 2016-06-10 | 한국과학기술원 | 웨어러블 박막 소자 및 이의 제조 방법 |
CN106325003A (zh) * | 2016-08-24 | 2017-01-11 | 深圳市华星光电技术有限公司 | 一种有机导电薄膜的图形化方法 |
KR101891119B1 (ko) * | 2016-11-29 | 2018-08-23 | (주)루바니 | 조각 패턴의 태양전지가 결합된 스마트 원단 및 그 제조 방법 |
KR101947641B1 (ko) | 2017-07-13 | 2019-02-13 | 서울대학교산학협력단 | 투명전극 및 이를 제조하는 방법과 제조장치 |
DE112018004186T8 (de) * | 2017-08-17 | 2020-07-02 | California Institute Of Technology | Fertigungsprozesse für effektiv transparente Kontakte |
CN107585736B (zh) * | 2017-08-28 | 2022-07-12 | 宁夏软件工程院有限公司 | 一种曲面疏水微结构的制备方法 |
CN108340696B (zh) * | 2017-12-27 | 2020-04-14 | 江西合力泰科技有限公司 | 一种减少丝印工序的工艺改进方法 |
CN108517696B (zh) * | 2018-05-14 | 2020-05-05 | 东南大学 | 一种图案化柔性导电石墨烯布的制备方法 |
US11939688B2 (en) | 2019-03-29 | 2024-03-26 | California Institute Of Technology | Apparatus and systems for incorporating effective transparent catalyst for photoelectrochemical application |
CN110193991B (zh) * | 2019-05-15 | 2021-01-05 | 郑州工程技术学院 | 一种美术立体转印系统及其方法 |
KR102253812B1 (ko) * | 2019-08-30 | 2021-05-18 | 한양대학교 에리카산학협력단 | 탄성 중합체 상 금속 패턴전사 방법 |
CN110610979A (zh) * | 2019-09-29 | 2019-12-24 | 武汉天马微电子有限公司 | 柔性显示面板及其制作方法、显示装置 |
CN111115563A (zh) * | 2019-12-23 | 2020-05-08 | 湖南大学 | 一种全干法功能材料剥离的方法 |
CN111415949B (zh) * | 2020-04-27 | 2022-07-29 | 武汉华星光电半导体显示技术有限公司 | 柔性显示面板及其制造方法 |
JP7472742B2 (ja) | 2020-09-29 | 2024-04-23 | 東レ株式会社 | 導電パターン付き基板の製造方法およびled実装回路基板の製造方法 |
CN115041836B (zh) * | 2022-06-30 | 2023-08-22 | 华南理工大学 | 一种磁驱折纸软体机器人的磁驱动单元激光诱导转印方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10141A (en) * | 1853-10-18 | Improved life-preserving seat | ||
BE757386A (fr) * | 1969-10-13 | 1971-04-13 | Du Pont | Procede de transfert double pour images photodurcissables |
JPS6032173B2 (ja) * | 1974-12-28 | 1985-07-26 | 富士写真フイルム株式会社 | 画像形成法 |
US4081282A (en) * | 1975-11-03 | 1978-03-28 | Seal Incorporated | Dry transfer image systems with non-light sensitive frangible layer |
JPS6049301B2 (ja) * | 1977-12-06 | 1985-11-01 | 富士写真フイルム株式会社 | 画像形成方法 |
JPS5983158A (ja) * | 1982-11-04 | 1984-05-14 | Matsushita Electric Ind Co Ltd | 樹脂パタ−ン印刷方法 |
JPS60126650A (ja) * | 1983-12-13 | 1985-07-06 | Matsushita Electric Ind Co Ltd | 樹脂パタ−ン印刷方法 |
JPH0766536A (ja) * | 1993-08-30 | 1995-03-10 | Fujitsu Ten Ltd | 配線の印刷方法及び該方法に使用する印刷装置 |
JP4180706B2 (ja) * | 1998-09-24 | 2008-11-12 | 和夫 寺嶋 | 物質・材料プロセッシング方法 |
JP4552299B2 (ja) * | 2000-09-21 | 2010-09-29 | パナソニック株式会社 | 微細パターンの製造方法、それを用いたプリント配線板及びその製造方法 |
JP3994681B2 (ja) * | 2001-04-11 | 2007-10-24 | ソニー株式会社 | 素子の配列方法及び画像表示装置の製造方法 |
AU2003902527A0 (en) * | 2003-05-22 | 2003-06-05 | Macquarie University | Method for fabricating microstructures |
JP4711641B2 (ja) * | 2004-05-19 | 2011-06-29 | 京セラ株式会社 | 複合シートの製造方法、積層体の製造方法および積層部品の製造方法 |
WO2008127807A1 (en) * | 2007-03-09 | 2008-10-23 | University Of Virginia Patent Foundation | Systems and methods of laser texturing of material surfaces and their applications |
US20070235902A1 (en) * | 2006-03-31 | 2007-10-11 | 3M Innovative Properties Company | Microstructured tool and method of making same using laser ablation |
DE102007032903A1 (de) * | 2007-07-14 | 2009-01-15 | Schepers Gmbh + Co. Kg | Verfahren zum Betreiben einer Lasergravureinrichtung |
US7985358B2 (en) * | 2008-03-03 | 2011-07-26 | Lg Chem, Ltd. | Process of making mold for optical film |
CN101572215B (zh) * | 2008-04-28 | 2011-04-27 | 财团法人工业技术研究院 | 图案化金属层及薄膜晶体管的制作方法 |
KR101091702B1 (ko) * | 2010-01-07 | 2011-12-09 | 한국과학기술원 | 패턴 전사방법 및 패턴 전사장치 |
US20110209749A1 (en) * | 2010-01-07 | 2011-09-01 | Korea Advanced Institute Of Science And Technology | Pattern transfer method and apparatus, flexible display panel, flexible solar cell, electronic book, thin film transistor, electromagnetic-shielding sheet, and flexible printed circuit board applying thereof |
-
2011
- 2011-09-14 CN CN2011102707579A patent/CN102452239A/zh active Pending
- 2011-09-30 JP JP2011218441A patent/JP5341966B2/ja not_active Expired - Fee Related
- 2011-10-05 EP EP11184047A patent/EP2444844A3/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
CN102452239A (zh) | 2012-05-16 |
JP2012094855A (ja) | 2012-05-17 |
EP2444844A3 (en) | 2012-05-16 |
EP2444844A2 (en) | 2012-04-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5341966B2 (ja) | パターン転写方法及びパターン転写装置、これを適用したフレキシブルディスプレイパネル、フレキシブル太陽電池、電子本、薄膜トランジスター、電磁波遮蔽シート、フレキシブル印刷回路基板 | |
US20110209749A1 (en) | Pattern transfer method and apparatus, flexible display panel, flexible solar cell, electronic book, thin film transistor, electromagnetic-shielding sheet, and flexible printed circuit board applying thereof | |
KR101114256B1 (ko) | 패턴 제조 방법 | |
KR101226086B1 (ko) | 패턴 제조 방법 및 패턴 전사 장치 | |
Armon et al. | Continuous nanoparticle assembly by a modulated photo-induced microbubble for fabrication of micrometric conductive patterns | |
Liu et al. | Laser direct synthesis and patterning of silver nano/microstructures on a polymer substrate | |
KR101247619B1 (ko) | 금속 나노입자 극미세 레이저 소결 장치 및 방법 | |
JP2014170973A5 (ja) | ||
US20090311489A1 (en) | Laser patterning of a carbon nanotube layer | |
KR101091702B1 (ko) | 패턴 전사방법 및 패턴 전사장치 | |
JP2016502227A (ja) | 熱融着転写を用いた柔軟埋込型電極フィルムの製造方法 | |
JP2011511461A (ja) | 基板に微粒子の薄層を形成する方法 | |
TWI719032B (zh) | 用於在製造一多層可印刷電子裝置對準金屬層之方法 | |
JP2009004669A (ja) | 金属配線基板の製造方法およびそれを用いて形成した金属配線基板 | |
KR101164061B1 (ko) | 패턴 제조 방법 및 패턴 전사 장치, 이를 적용한 플렉서블 디스플레이 패널, 플렉서블 태양전지, 전자책, 박막 트랜지스터, 전자파 차폐시트, 플렉서블 인쇄회로기판 | |
KR100951778B1 (ko) | 레이저 프린팅에 의한 박막 패터닝 방법 | |
Liang et al. | Femtosecond Laser Patterning Wettability‐Assisted PDMS for Fabrication of Flexible Silver Nanowires Electrodes | |
Hwang et al. | Review on dry film photoresist-based patterning of Ag nanowire flexible electrodes for wearable electronics | |
KR20190132324A (ko) | 고분해능의 대면적 미세 패턴 제조 방법 및 그 방법으로 제조된 평판 디스플레이 | |
KR101141026B1 (ko) | 소수성 코팅층 선택적 제거 방법 | |
KR20130106676A (ko) | 미세금속전극 제조방법 | |
Aizamddin et al. | Techniques for designing patterned conducting polymers | |
CN113744929A (zh) | 一种银纳米线柔性导电透明薄膜的制备方法 | |
KR20170040070A (ko) | 금속 스탬프 제조 방법 | |
Kim et al. | Rapid localized deactivation of self-assembled monolayers by propagation-controlled laser-induced plasma and its application to self-patterning of electronics and biosensors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121113 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130121 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130716 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130808 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5341966 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |