JP5339741B2 - メタライズ基板およびセラミック基板と金属基板との接合体 - Google Patents
メタライズ基板およびセラミック基板と金属基板との接合体 Download PDFInfo
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- JP5339741B2 JP5339741B2 JP2008045122A JP2008045122A JP5339741B2 JP 5339741 B2 JP5339741 B2 JP 5339741B2 JP 2008045122 A JP2008045122 A JP 2008045122A JP 2008045122 A JP2008045122 A JP 2008045122A JP 5339741 B2 JP5339741 B2 JP 5339741B2
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- substrate
- metal
- metal film
- ceramic substrate
- metallized
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- 239000000758 substrate Substances 0.000 title claims description 131
- 229910052751 metal Inorganic materials 0.000 title claims description 122
- 239000002184 metal Substances 0.000 title claims description 122
- 239000000919 ceramic Substances 0.000 title claims description 62
- 229910052719 titanium Inorganic materials 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 17
- 229910002708 Au–Cu Inorganic materials 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 239000000843 powder Substances 0.000 description 26
- 238000005219 brazing Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 13
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 9
- 238000005304 joining Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 229910017945 Cu—Ti Inorganic materials 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 229910017709 Ni Co Inorganic materials 0.000 description 4
- 229910003267 Ni-Co Inorganic materials 0.000 description 4
- 229910003262 Ni‐Co Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229940116411 terpineol Drugs 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910000905 alloy phase Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000233805 Phoenix Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Description
12、32 セラミック基板
14、34 金属膜
16、36 結晶相
18、38 接合層
19 端部
20 セラミック基板と金属基板との接合体(接合体)
22 Niメッキ層
24 Au−Cuロウ材層
26 金属基板
Claims (4)
- ジルコニアを主成分とするセラミック基板の主面に、Agと、Cuと、Tiと、5.0質量%以上かつ40質量%以下のAlとを少なくとも含む金属膜が設けられており、
前記金属膜は、TiとAlとを含む結晶相を含むとともに、前記金属膜と前記セラミック基板との境界部分に形成された、AlとOとをそれぞれ10質量%以上かつAlとOとを合計50質量%以上含む接合層を有することを特徴とするメタライズ基板。 - 請求項1に記載のメタライズ基板の前記金属膜の側に、
金属ロウを介して金属基板が接合されていることを特徴とするセラミック基板と金属基板との接合体。 - 前記金属ロウは、
Au−Cuを主成分とすることを特徴とする請求項2記載のセラミック基板と金属基板との接合体。 - 前記メタライズ基板の前記金属膜の表面に、Niメッキ層が設けられており、前記金属ロウは前記Niメッキ層の表面に配されていることを特とする請求項2または3記載のセラミック基板と金属基板との接合体。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008045122A JP5339741B2 (ja) | 2008-02-26 | 2008-02-26 | メタライズ基板およびセラミック基板と金属基板との接合体 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008045122A JP5339741B2 (ja) | 2008-02-26 | 2008-02-26 | メタライズ基板およびセラミック基板と金属基板との接合体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009203097A JP2009203097A (ja) | 2009-09-10 |
JP5339741B2 true JP5339741B2 (ja) | 2013-11-13 |
Family
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JP2008045122A Expired - Fee Related JP5339741B2 (ja) | 2008-02-26 | 2008-02-26 | メタライズ基板およびセラミック基板と金属基板との接合体 |
Country Status (1)
Country | Link |
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JP (1) | JP5339741B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104411657B (zh) | 2012-06-27 | 2017-02-22 | 东曹株式会社 | 复合板及其制造方法 |
JP7366551B2 (ja) | 2019-02-05 | 2023-10-23 | 新光電気工業株式会社 | 複合グリーンシート、セラミック部材、複合グリーンシートの製造方法及びセラミック部材の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60131875A (ja) * | 1983-12-20 | 1985-07-13 | 三菱重工業株式会社 | セラミツクと金属の接合法 |
JPH09181423A (ja) * | 1990-04-16 | 1997-07-11 | Denki Kagaku Kogyo Kk | セラミックス回路基板 |
JPH05319944A (ja) * | 1992-05-15 | 1993-12-03 | Toshiba Corp | セラミックス回路基板および回路基板用接合剤 |
JP4348112B2 (ja) * | 2003-05-13 | 2009-10-21 | 日本特殊陶業株式会社 | メタライズ層形成セラミックス焼結体、メタライズ用ペースト、及びメタライズ層形成セラミックス焼結体の製造方法 |
JP5204958B2 (ja) * | 2006-06-19 | 2013-06-05 | 日本発條株式会社 | 接合体 |
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2008
- 2008-02-26 JP JP2008045122A patent/JP5339741B2/ja not_active Expired - Fee Related
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JP2009203097A (ja) | 2009-09-10 |
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