JP5320237B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5320237B2
JP5320237B2 JP2009220146A JP2009220146A JP5320237B2 JP 5320237 B2 JP5320237 B2 JP 5320237B2 JP 2009220146 A JP2009220146 A JP 2009220146A JP 2009220146 A JP2009220146 A JP 2009220146A JP 5320237 B2 JP5320237 B2 JP 5320237B2
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JP
Japan
Prior art keywords
circuit
modulation
voltage
channel transistor
semiconductor device
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Expired - Fee Related
Application number
JP2009220146A
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English (en)
Japanese (ja)
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JP2010102701A5 (enExample
JP2010102701A (ja
Inventor
一馬 古谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009220146A priority Critical patent/JP5320237B2/ja
Publication of JP2010102701A publication Critical patent/JP2010102701A/ja
Publication of JP2010102701A5 publication Critical patent/JP2010102701A5/ja
Application granted granted Critical
Publication of JP5320237B2 publication Critical patent/JP5320237B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Electronic Switches (AREA)
  • Digital Transmission Methods That Use Modulated Carrier Waves (AREA)
  • Near-Field Transmission Systems (AREA)
JP2009220146A 2008-09-26 2009-09-25 半導体装置 Expired - Fee Related JP5320237B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009220146A JP5320237B2 (ja) 2008-09-26 2009-09-25 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008247548 2008-09-26
JP2008247548 2008-09-26
JP2009220146A JP5320237B2 (ja) 2008-09-26 2009-09-25 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013146323A Division JP2013254500A (ja) 2008-09-26 2013-07-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2010102701A JP2010102701A (ja) 2010-05-06
JP2010102701A5 JP2010102701A5 (enExample) 2012-09-27
JP5320237B2 true JP5320237B2 (ja) 2013-10-23

Family

ID=42056753

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2009220146A Expired - Fee Related JP5320237B2 (ja) 2008-09-26 2009-09-25 半導体装置
JP2013146323A Withdrawn JP2013254500A (ja) 2008-09-26 2013-07-12 半導体装置
JP2013265063A Expired - Fee Related JP5767690B2 (ja) 2008-09-26 2013-12-24 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2013146323A Withdrawn JP2013254500A (ja) 2008-09-26 2013-07-12 半導体装置
JP2013265063A Expired - Fee Related JP5767690B2 (ja) 2008-09-26 2013-12-24 半導体装置

Country Status (2)

Country Link
US (1) US8224277B2 (enExample)
JP (3) JP5320237B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8035484B2 (en) * 2007-05-31 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and IC label, IC tag, and IC card provided with the semiconductor device
WO2011093150A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8569183B2 (en) * 2010-03-01 2013-10-29 Fairchild Semiconductor Corporation Low temperature dielectric flow using microwaves
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5815337B2 (ja) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 半導体装置
US9362820B2 (en) 2010-10-07 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. DCDC converter, semiconductor device, and power generation device
JP5587135B2 (ja) * 2010-10-28 2014-09-10 ルネサスエレクトロニクス株式会社 無線通信用半導体装置
US9384373B2 (en) 2011-10-26 2016-07-05 Qualcomm Incorporated Adaptive signal scaling in NFC transceivers
KR102522888B1 (ko) * 2017-11-02 2023-04-19 도레이 카부시키가이샤 집적 회로 및 그의 제조 방법 그리고 그것을 사용한 무선 통신 장치
JP7382401B2 (ja) * 2019-05-28 2023-11-16 ラピスセミコンダクタ株式会社 通知応答回路
WO2020245728A1 (ja) * 2019-06-07 2020-12-10 株式会社半導体エネルギー研究所 通信装置および電子機器
KR102425160B1 (ko) * 2020-06-24 2022-07-26 코나아이 (주) 스마트 카드
CN115002959B (zh) * 2022-05-23 2023-04-07 深圳市鸿远微思电子有限公司 一种数字调光led灯驱动电路
CN115378413B (zh) * 2022-10-25 2023-01-24 成都市易冲半导体有限公司 控制电路及控制方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10285087A (ja) * 1997-04-10 1998-10-23 Omron Corp データキャリア及び識別システム
JP3488166B2 (ja) * 2000-02-24 2004-01-19 日本電信電話株式会社 非接触ｉｃカードシステムとそのリーダライタおよび非接触ｉｃカード
JP4118485B2 (ja) * 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4718677B2 (ja) * 2000-12-06 2011-07-06 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7592980B2 (en) * 2002-06-05 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2004027740A1 (en) * 2002-09-20 2004-04-01 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP4574130B2 (ja) * 2003-06-18 2010-11-04 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP4574158B2 (ja) * 2003-10-28 2010-11-04 株式会社半導体エネルギー研究所 半導体表示装置及びその作製方法
JP2005173862A (ja) * 2003-12-10 2005-06-30 Toshiba Corp 非接触式ｉｃカード
JP4265487B2 (ja) * 2004-06-17 2009-05-20 富士通株式会社 リーダー装置、その装置の送信方法及びタグ
JP2006180073A (ja) 2004-12-21 2006-07-06 Okayama Prefecture 無線ｉｃタグ
US7787562B2 (en) * 2004-12-29 2010-08-31 Motorola, Inc. Method and apparatus for adaptive modulation of wireless communication signals
JP4734988B2 (ja) * 2005-03-28 2011-07-27 株式会社日立製作所 Ｒｆｉｄ
TWI409934B (zh) * 2005-10-12 2013-09-21 半導體能源研究所股份有限公司 半導體裝置
JP2007183790A (ja) 2006-01-06 2007-07-19 Hitachi Ltd Ｒｆｉｄ装置、ｒｆｉｄシステム及びアクセス制御方法
JP4355711B2 (ja) * 2006-04-20 2009-11-04 フェリカネットワークス株式会社 情報処理端末，ｉｃカード，携帯型通信装置，無線通信方法，およびプログラム
JP5236243B2 (ja) * 2006-10-18 2013-07-17 株式会社半導体エネルギー研究所 Ｒｆタグ
EP1914669B1 (en) * 2006-10-18 2011-04-20 Semiconductor Energy Laboratory Co., Ltd. RFID tag
JP5325415B2 (ja) * 2006-12-18 2013-10-23 株式会社半導体エネルギー研究所 半導体装置
JP5412034B2 (ja) * 2006-12-26 2014-02-12 株式会社半導体エネルギー研究所 半導体装置
US8358202B2 (en) * 2006-12-26 2013-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4637204B2 (ja) * 2008-04-30 2011-02-23 フェリカネットワークス株式会社 通信装置、及びアンテナ特性の制御方法
WO2010032603A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and wireless tag using the same

Also Published As

Publication number Publication date
US20100079203A1 (en) 2010-04-01
JP2010102701A (ja) 2010-05-06
JP2013254500A (ja) 2013-12-19
JP5767690B2 (ja) 2015-08-19
JP2014112853A (ja) 2014-06-19
US8224277B2 (en) 2012-07-17

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