JP5314857B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5314857B2
JP5314857B2 JP2007187768A JP2007187768A JP5314857B2 JP 5314857 B2 JP5314857 B2 JP 5314857B2 JP 2007187768 A JP2007187768 A JP 2007187768A JP 2007187768 A JP2007187768 A JP 2007187768A JP 5314857 B2 JP5314857 B2 JP 5314857B2
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Prior art keywords
layer
light
substrate
laser beam
conductive layer
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Expired - Fee Related
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JP2007187768A
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English (en)
Japanese (ja)
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JP2008053698A5 (enExample
JP2008053698A (ja
Inventor
秀和 宮入
博信 小路
明久 下村
栄二 比嘉
智昭 森若
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007187768A priority Critical patent/JP5314857B2/ja
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Publication of JP2008053698A5 publication Critical patent/JP2008053698A5/ja
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  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007187768A 2006-07-28 2007-07-19 半導体装置の作製方法 Expired - Fee Related JP5314857B2 (ja)

Priority Applications (1)

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JP2007187768A JP5314857B2 (ja) 2006-07-28 2007-07-19 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006206505 2006-07-28
JP2006206505 2006-07-28
JP2007187768A JP5314857B2 (ja) 2006-07-28 2007-07-19 半導体装置の作製方法

Publications (3)

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JP2008053698A JP2008053698A (ja) 2008-03-06
JP2008053698A5 JP2008053698A5 (enExample) 2010-07-22
JP5314857B2 true JP5314857B2 (ja) 2013-10-16

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JP2007187768A Expired - Fee Related JP5314857B2 (ja) 2006-07-28 2007-07-19 半導体装置の作製方法

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5367415B2 (ja) * 2008-03-06 2013-12-11 株式会社半導体エネルギー研究所 発光装置の作製方法及び成膜用基板
JP5079722B2 (ja) 2008-03-07 2012-11-21 株式会社半導体エネルギー研究所 発光装置の作製方法
JP5238544B2 (ja) * 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US8409672B2 (en) 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
JP2009280909A (ja) * 2008-04-25 2009-12-03 Semiconductor Energy Lab Co Ltd 成膜方法および発光装置の作製方法
US8405909B2 (en) 2008-05-09 2013-03-26 Semiconductor Energy Laboratories Co., Ltd. Deposition donor substrate and deposition method using the same
US8652859B2 (en) * 2011-01-31 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device and manufacturing apparatus of light-emitting device
TWI636896B (zh) * 2013-10-30 2018-10-01 荷蘭Ｔｎｏ自然科學組織公司 用以在基材上形成圖案化結構之方法與系統
CN107045237B (zh) 2017-02-04 2022-02-15 合肥京东方光电科技有限公司 阵列基板及其制造方法
KR20210023375A (ko) * 2019-08-23 2021-03-04 삼성전자주식회사 레이저 전사 장치 및 이를 이용한 전사 방법
CN115312634B (zh) * 2022-07-26 2025-07-11 深圳市华星光电半导体显示技术有限公司 微发光二极管的分散转移方法
CN116742299B (zh) * 2023-05-04 2023-12-26 西安电子科技大学 一种铁电薄膜移相器、晶圆级相控阵芯片系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3606891B2 (ja) * 1992-11-06 2005-01-05 富士写真フイルム株式会社 熱転写シート及び画像形成方法
JP3720441B2 (ja) * 1995-12-19 2005-11-30 富士写真フイルム株式会社 熱転写材料
JPH11243209A (ja) * 1998-02-25 1999-09-07 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置、アクティブマトリクス基板、液晶表示装置および電子機器
JP2000031624A (ja) * 1998-07-10 2000-01-28 Omron Corp 導電性パターンを形成するための方法及び装置、並びに、導電性パターン形成用転写板
JP2000031013A (ja) * 1998-07-10 2000-01-28 Omron Corp 回路パターンの修復方法及び装置、並びに、回路パターン修復用転写板
JP2001156017A (ja) * 1999-11-29 2001-06-08 Semiconductor Energy Lab Co Ltd レーザー装置及びレーザー光を用いた熱処理方法並びに半導体装置の作製方法
JP4347545B2 (ja) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
JP2005285827A (ja) * 2004-03-26 2005-10-13 Advanced Lcd Technologies Development Center Co Ltd 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置

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