JP5307734B2 - Memsキャビティ被覆層および方法 - Google Patents
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- JP5307734B2 JP5307734B2 JP2009554632A JP2009554632A JP5307734B2 JP 5307734 B2 JP5307734 B2 JP 5307734B2 JP 2009554632 A JP2009554632 A JP 2009554632A JP 2009554632 A JP2009554632 A JP 2009554632A JP 5307734 B2 JP5307734 B2 JP 5307734B2
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- 238000000034 method Methods 0.000 title claims abstract description 71
- 239000011247 coating layer Substances 0.000 title 1
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims description 59
- 230000003287 optical effect Effects 0.000 claims description 55
- 238000004519 manufacturing process Methods 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 19
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 15
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 238000004806 packaging method and process Methods 0.000 claims description 10
- 230000036961 partial effect Effects 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 abstract description 17
- 230000002829 reductive effect Effects 0.000 abstract description 15
- 238000010292 electrical insulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 479
- 239000007789 gas Substances 0.000 description 50
- 239000000758 substrate Substances 0.000 description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000002356 single layer Substances 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 239000000203 mixture Substances 0.000 description 11
- 239000002243 precursor Substances 0.000 description 11
- 239000000945 filler Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000003750 conditioning effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 239000012808 vapor phase Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000872 buffer Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920000098 polyolefin Polymers 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920001084 poly(chloroprene) Polymers 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- IRLPACMLTUPBCL-KQYNXXCUSA-N 5'-adenylyl sulfate Chemical compound C1=NC=2C(N)=NC=NC=2N1[C@@H]1O[C@H](COP(O)(=O)OS(O)(=O)=O)[C@@H](O)[C@H]1O IRLPACMLTUPBCL-KQYNXXCUSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229920001651 Cyanoacrylate Polymers 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229920002614 Polyether block amide Polymers 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002174 Styrene-butadiene Substances 0.000 description 1
- 241000532412 Vitex Species 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 235000009347 chasteberry Nutrition 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000002654 heat shrinkable material Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- HLDBBQREZCVBMA-UHFFFAOYSA-N hydroxy-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C HLDBBQREZCVBMA-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- LNDHQUDDOUZKQV-UHFFFAOYSA-J molybdenum tetrafluoride Chemical compound F[Mo](F)(F)F LNDHQUDDOUZKQV-UHFFFAOYSA-J 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011115 styrene butadiene Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/0008—Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
Description
14、14a、14b、814、914、1014 可動反射層(金属材料のストリップ)
16、16a、16b、816、916、1016 光スタック
18 ポスト(支持体)
19、819、919、1019 キャビティ(ギャップ)
20、820、920、1020 透明基材
21 プロセッサ
22 アレイドライバ
24 行ドライバ回路
26 列ドライバ回路
27 ネットワークインターフェース
28 フレームバッファ
29 ドライバコントローラ
30 ディスプレイアレイ
32 テザー
34 変形可能層
40 ディスプレイデバイス
41 ハウジング
42、842、942、1042 支持ポストプラグ
43 アンテナ
44 バス構造
45 スピーカ
46 マイクロフォン
47 送受信機
48 入力デバイス
50 電源
52 コンディショニングハードウェア
816a、916a 導電性層
816b、916b 部分反射層
834、934、1034 変形可能層
860、960 第1コンフォーマル層
862、962 第2コンフォーマル層
834a 変形可能層834の内側表面
834b 変形可能層の外側表面
860a、860b、960a、960b 第1コンフォーマル層の部分
916c 主誘電性層
1014a 可動反射層の下側表面
1060 バンプ
1070 エッチホール
1072 光スタック上のロケーション
1200 パッケージ
1202 未リリース干渉変調器を備えるアレイ
1204 背面板
1206 シール
1206a シールの開口
1206b 充填材
1220 基材
Claims (34)
- 光干渉変調器を形成する方法において、
光干渉変調器内にキャビティを形成するステップであって、前記キャビティは主誘電性層と第2層によって画定され、前記第2層は、反射性があり、前記主誘電性層に対して可動である、ステップと、
前記キャビティを形成した後に、原子層堆積(ALD)によって前記キャビティ内に光誘電性層の一部として補助誘電性光酸化物層を形成するステップであって、前記補助誘電性光酸化物層は、前記キャビティ内で、前記主誘電性層および前記第2層のそれぞれを覆って少なくとも約10Åの厚さを有し、前記光誘電性層の総合厚さは、前記補助誘電性光酸化物層および前記主誘電性層の厚さに依存する、ステップと
を含み、
前記光誘電性層は、前記主誘電性層と、前記主誘電性層及び前記第2層の両方上の前記補助誘電性光酸化物層を含む方法。 - 前記補助誘電性光酸化物層を形成するステップは、Al2O3およびSiO2の少なくとも一方を形成するステップを含む請求項1に記載の方法。
- 前記補助誘電性光酸化物層を形成するステップは、複数のサブ層を形成するステップを含む請求項1に記載の方法。
- 前記補助誘電性光酸化物層を形成するステップは、約350℃未満の温度で前記補助誘電性光酸化物層の少なくとも一部を形成するステップを含む請求項1に記載の方法。
- ALDによって前記補助誘電性光酸化物層を形成するステップは、前記キャビティ内に誘電性光酸化物材料の第1コンフォーマル層を形成するステップを含む請求項1に記載の方法。
- 前記キャビティを画定する前記主誘電性層の一部分を覆って形成される前記第1コンフォーマル層の厚さは、前記キャビティを画定する前記第2層の一部分を覆って形成される前記第1コンフォーマル層の厚さに実質的に等しい請求項5に記載の方法。
- 前記キャビティを画定する前記主誘電性層の一部分を覆って形成される前記第1コンフォーマル層の厚さは約50Å〜約400Åである請求項6に記載の方法。
- 前記キャビティを形成した後に前記第2層の表面上に光誘電性材料層を形成するステップをさらに含み、前記第2層の前記表面は前記キャビティの外側にある請求項1に記載の方法。
- ALDによって前記補助誘電性光酸化物層を形成するステップは、前記主誘電性層内の少なくとも1つのピンホールをシールするステップを含む請求項1に記載の方法。
- 前記補助誘電性光酸化物層および前記主誘電性層を含む前記光誘電性層の総合厚さは約100nm未満である請求項1に記載の方法。
- ALDによって前記補助誘電性光酸化物層を形成するステップは、前記主誘電性層上に配設された製造残渣を覆って前記補助誘電性光酸化物層の少なくとも一部を形成するステップを含む請求項1に記載の方法。
- 前記干渉変調器の周りを囲み、少なくとも1つの開口を備えるシールを形成すること、および、
背面板を前記シールに固定し、それにより、前記干渉変調器をパッケージングすること を含む方法によって、前記補助誘電性層を形成する前に、前記光干渉変調器をパッケージングするステップをさらに含む請求項1に記載の方法。 - 前記補助誘電性光酸化物層を形成した後に、前記シール内の前記少なくとも1つの開口を充填するステップをさらに含む請求項12に記載の方法。
- 請求項1に記載の方法によって形成される光干渉変調器。
- 前記光干渉変調器は、微小電気機械システムデバイスのアレイの要素である請求項1に記載の方法。
- 前記第2層内に複数の開口を形成するステップをさらに含む請求項15に記載の方法。
- 請求項15に記載の方法によって製造される微小電気機械システムデバイス。
- 主誘電性層と、
前記主誘電性層に対して可動な反射層と、
前記主誘電性層および前記反射層によって画定されるキャビティと、
前記キャビティ内の光誘電性層の一部としての補助誘電性光酸化物層であって、前記キャビティ内で、前記主誘電性層および前記反射層のそれぞれを覆って少なくとも約10Åの厚さを有し、前記光誘電性層の総合厚さは、前記補助誘電性光酸化物層および前記主誘電性層の厚さに依存する、補助誘電性光酸化物層と
を備える干渉変調器であって、
前記光誘電性層は、前記主誘電性層と、前記主誘電性層及び前記反射層の両方上の前記補助誘電性光酸化物層とを含む干渉変調器。 - 前記反射層に結合した変形可能層をさらに備える請求項18に記載の干渉変調器。
- 前記補助誘電性光酸化物層の少なくとも一部はSiO2およびAl2O3の少なくとも一方を含む請求項18に記載の干渉変調器。
- 前記補助誘電性光酸化物層の厚さは約50Å〜約400Åである請求項18に記載の干渉変調器。
- 前記干渉変調器の周りを囲むシールと、
前記シールに固定された背面板とをさらに備える請求項18に記載の干渉変調器のアレイを備えるディスプレイ。 - 請求項22に記載の干渉変調器のアレイを備えるディスプレイと、
前記ディスプレイと通信するよう構成され、画像データを処理するよう構成されるプロセッサと、
前記プロセッサと通信するよう構成されるメモリデバイスとを備える装置。 - 少なくとも1つの信号を前記ディスプレイに送出するよう構成されるドライバ回路をさらに備える請求項23に記載の装置。
- 前記画像データの少なくとも一部分を前記ドライバ回路に送出するよう構成されるコントローラをさらに備える請求項24に記載の装置。
- 前記画像データを前記プロセッサに送出するよう構成される画像ソースモジュールをさらに備える請求項23に記載の装置。
- 前記画像ソースモジュールは、受信機、送受信機および送信機の少なくとも1つを備える請求項26に記載の装置。
- 入力データを受信し、前記入力データを前記プロセッサに通信するよう構成される入力デバイスをさらに備える請求項23に記載の装置。
- 干渉変調器を製造する方法であって、
部分反射体を備える第1層を覆って犠牲層を形成するステップと、
前記犠牲層を覆って可動反射層を形成するステップと、
前記犠牲層をエッチング除去し、それにより、前記第1層および前記可動反射層によって画定される対向面を備える光干渉キャビティを形成するステップと、
原子層堆積によって前記キャビティ内に誘電性光酸化物層を堆積するステップであって、前記誘電性光酸化物層は、前記部分反射体および前記可動反射層の少なくとも一部に直接接触する、ステップと、
を含み、
前記誘電性光酸化物層の厚さが、前記キャビティ内の前記部分反射体及び前記可動反射層のそれぞれ上に約10Åを少なくとも有する方法。 - 前記犠牲層をエッチング除去するステップは、前記犠牲層をXeF2に接触させるステップを含む請求項29に記載の方法。
- 犠牲層を形成するステップは、モリブデン、ゲルマニウム、アモルファスシリコンの少なくとも1つを含む層を形成するステップを含む請求項29に記載の方法。
- 犠牲層を形成するステップは、複数のサブ層を備える層を形成するステップを含む請求項29に記載の方法。
- 前記可動反射層の周りを囲んで前記第1層上に、少なくとも1つの開口を備えるシールを形成するステップと、
背面板を前記シールに固定するステップとをさらに含み、
前記シールを形成するステップと前記背面板を固定するステップは、前記キャビティ内に前記誘電性光酸化物層を堆積する前に実施される請求項29に記載の方法。 - 請求項29に記載の方法によって製造される干渉変調器。
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-
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- 2008-03-07 KR KR1020097021764A patent/KR20100015686A/ko active IP Right Grant
- 2008-03-07 EP EP08714218A patent/EP2414275A2/en not_active Withdrawn
- 2008-03-07 CN CN2008800087506A patent/CN101636344B/zh not_active Expired - Fee Related
- 2008-03-07 WO PCT/US2008/056310 patent/WO2008115716A2/en active Application Filing
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-
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Also Published As
Publication number | Publication date |
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US20080231931A1 (en) | 2008-09-25 |
JP2010524010A (ja) | 2010-07-15 |
CN101636344A (zh) | 2010-01-27 |
KR20100015686A (ko) | 2010-02-12 |
US7733552B2 (en) | 2010-06-08 |
TWI462869B (zh) | 2014-12-01 |
CN101636344B (zh) | 2013-08-21 |
TW200848360A (en) | 2008-12-16 |
US20100245979A1 (en) | 2010-09-30 |
WO2008115716A2 (en) | 2008-09-25 |
US20120206462A1 (en) | 2012-08-16 |
US8164815B2 (en) | 2012-04-24 |
WO2008115716A3 (en) | 2009-04-09 |
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