JP5288933B2 - 半導体記憶装置及びその製造方法 - Google Patents
半導体記憶装置及びその製造方法 Download PDFInfo
- Publication number
- JP5288933B2 JP5288933B2 JP2008205339A JP2008205339A JP5288933B2 JP 5288933 B2 JP5288933 B2 JP 5288933B2 JP 2008205339 A JP2008205339 A JP 2008205339A JP 2008205339 A JP2008205339 A JP 2008205339A JP 5288933 B2 JP5288933 B2 JP 5288933B2
- Authority
- JP
- Japan
- Prior art keywords
- contact
- cell array
- wirings
- bit line
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 95
- 239000011229 interlayer Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 6
- 102000003816 Interleukin-13 Human genes 0.000 description 5
- 108090000176 Interleukin-13 Proteins 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 101100006960 Caenorhabditis elegans let-2 gene Proteins 0.000 description 4
- 102000003815 Interleukin-11 Human genes 0.000 description 4
- 108090000177 Interleukin-11 Proteins 0.000 description 4
- 102000013462 Interleukin-12 Human genes 0.000 description 4
- 108010065805 Interleukin-12 Proteins 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 102000003812 Interleukin-15 Human genes 0.000 description 3
- 108090000172 Interleukin-15 Proteins 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 102000049772 Interleukin-16 Human genes 0.000 description 2
- 101800003050 Interleukin-16 Proteins 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101100328552 Caenorhabditis elegans emb-9 gene Proteins 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 102000026633 IL6 Human genes 0.000 description 1
- 241000877463 Lanio Species 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 241001656823 Ornithostaphylos Species 0.000 description 1
- 241000255969 Pieris brassicae Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 229910004491 TaAlN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- -1 chalcogenide compound Chemical class 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- ZXOKVTWPEIAYAB-UHFFFAOYSA-N dioxido(oxo)tungsten Chemical group [O-][W]([O-])=O ZXOKVTWPEIAYAB-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- YDZQQRWRVYGNER-UHFFFAOYSA-N iron;titanium;trihydrate Chemical group O.O.O.[Ti].[Fe] YDZQQRWRVYGNER-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052609 olivine Inorganic materials 0.000 description 1
- 239000010450 olivine Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Description
図1は、本発明の第1の実施形態に係る半導体記憶装置のブロック図である。
次に、ビット線BL及びワード線WLの端部の形状について説明する。
図9〜図20は、ワード線WL1以上の形成工程を工程順に示した斜視図である。これら図9〜図20を適宜参照しながら、上層部の形成プロセスを説明する。なお、説明の便宜上、一部の絶縁体は図示を省略している。
図21、22は、本発明の第2の実施形態に係る半導体記憶装置のコンタクト接続部とコンタクトプラグの形状であり、半導体記憶装置の積層方向を面法線とする断面形状を示す図である。
図23、24は、本発明の第3の実施形態に係る半導体記憶装置のコンタクト接続部及びコンタクトプラグを示す図であり、半導体記憶装置の積層方向を面法線とする断面形状である。
〜BL208を接続するものであり、コンタクトプラグCLbとビット線BL207との接触面積s207a、s207bの総和、コンタクトプラグCLbとビット線BL206との接触面積s206a、s206bの総和、コンタクトプラグCLbとビット線BL205の接触面積s205が同じになっている。この場合も、図23の場合と同様、コンタクトプラグCLb及びビット線BL205〜BL207の各接続抵抗を同じにすることができる。
Claims (5)
- 半導体基板と、
この半導体基板上に形成されて、複数の第1の配線、これら複数の第1の配線と交差する複数の第2の配線、及び前記第1及び第2の配線の交差部で両配線間に接続されたメモリセルを有するセルアレイ層を複数積層してなるセルアレイブロックと、
複数の前記セルアレイ層の複数の第1の配線間、複数の第2の配線間、前記第1若しくは第2の配線及び前記半導体基板間、又は前記第1若しくは第2の配線及び他の金属配線間を接続する前記セルアレイ層の積層方向に延びる複数のコンタクトプラグと
を備え、
所定の前記セルアレイ層の第1又は第2の配線はそれぞれ、一体として形成された2つの板状部分からなるコンタクト接続部を有し、
当該コンタクト接続部は、2つの板状部分が前記コンタクトプラグの両側面と接触する
ことを特徴とする半導体記憶装置。 - 前記コンタクトプラグは、前記セルアレイの積層方向と直交する断面が円形状である
ことを特徴とする請求項1記載の半導体記憶装置。 - 前記コンタクトプラグは、前記セルアレイの積層方向と直交する断面が楕円形状である
ことを特徴とする請求項1記載の半導体記憶装置。 - 前記コンタクトプラグと前記半導体基板及び前記セルアレイ層の第1又は第2の配線との複数ある接触部分のうち少なくとも2箇所の接触面積が同一である
ことを特徴とする請求項1〜3記載のいずれか1項記載の半導体記憶装置。 - 半導体基板上に、互いに交差する第1及び第2の配線とこれら第1及び第2の配線の各交差部で両配線間に接続されたメモリセルを備えたセルアレイ層を複数多層に形成する工程と、
所定の間隙を持つ2つの凸形状を有するマスクを用い、前記第1及び第2の配線にコンタクト接続部を形成する工程と、
複数の前記セルアレイ層に形成された前記コンタクト接続部の間隙を貫通する貫通孔を形成する工程と、
形成された前記貫通孔に導電性材料を充填して前記各セルアレイ層の前記第1又は第2の配線と前記半導体基板とをそれぞれ個別に接続する前記セルアレイ層の積層方向に延びる複数のコンタクトプラグを形成する工程と
を備え、
前記コンタクト接続部は2つの板状部分からなり、これら2つの板状部分は、前記2つの凸形状を有するマスクによって一体として形成される
ことを特徴とする半導体記憶装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008205339A JP5288933B2 (ja) | 2008-08-08 | 2008-08-08 | 半導体記憶装置及びその製造方法 |
US12/399,376 US8222677B2 (en) | 2008-08-08 | 2009-03-06 | Semiconductor memory device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008205339A JP5288933B2 (ja) | 2008-08-08 | 2008-08-08 | 半導体記憶装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010040977A JP2010040977A (ja) | 2010-02-18 |
JP5288933B2 true JP5288933B2 (ja) | 2013-09-11 |
Family
ID=41652077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008205339A Expired - Fee Related JP5288933B2 (ja) | 2008-08-08 | 2008-08-08 | 半導体記憶装置及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8222677B2 (ja) |
JP (1) | JP5288933B2 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4945609B2 (ja) * | 2009-09-02 | 2012-06-06 | 株式会社東芝 | 半導体集積回路装置 |
JP4945619B2 (ja) | 2009-09-24 | 2012-06-06 | 株式会社東芝 | 半導体記憶装置 |
JP2011176226A (ja) * | 2010-02-25 | 2011-09-08 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JP5395738B2 (ja) | 2010-05-17 | 2014-01-22 | 株式会社東芝 | 半導体装置 |
US8258020B2 (en) * | 2010-11-04 | 2012-09-04 | Crossbar Inc. | Interconnects for stacked non-volatile memory device and method |
JP2012248620A (ja) * | 2011-05-26 | 2012-12-13 | Toshiba Corp | 半導体記憶装置の製造方法 |
JP5595977B2 (ja) * | 2011-05-27 | 2014-09-24 | 株式会社東芝 | 半導体記憶装置、その製造方法及びコンタクト構造の形成方法 |
US8728940B2 (en) * | 2012-01-26 | 2014-05-20 | Micron Technology, Inc. | Memory arrays and methods of forming same |
JP5606479B2 (ja) * | 2012-03-22 | 2014-10-15 | 株式会社東芝 | 半導体記憶装置 |
US10043852B2 (en) * | 2015-08-11 | 2018-08-07 | Toshiba Memory Corporation | Magnetoresistive memory device and manufacturing method of the same |
FR3055943B1 (fr) * | 2016-09-15 | 2020-10-02 | Valeo Vision | Cablage d'une source lumineuse de haute resolution |
US10777510B2 (en) | 2016-11-28 | 2020-09-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including dummy via anchored to dummy metal layer |
US10424374B2 (en) | 2017-04-28 | 2019-09-24 | Micron Technology, Inc. | Programming enhancement in self-selecting memory |
US10424730B2 (en) | 2018-02-09 | 2019-09-24 | Micron Technology, Inc. | Tapered memory cell profiles |
US10693065B2 (en) | 2018-02-09 | 2020-06-23 | Micron Technology, Inc. | Tapered cell profile and fabrication |
US10541364B2 (en) | 2018-02-09 | 2020-01-21 | Micron Technology, Inc. | Memory cells with asymmetrical electrode interfaces |
US10854813B2 (en) | 2018-02-09 | 2020-12-01 | Micron Technology, Inc. | Dopant-modulated etching for memory devices |
CN113544850A (zh) * | 2019-03-19 | 2021-10-22 | 铠侠股份有限公司 | 半导体存储装置 |
US10985212B2 (en) | 2019-04-16 | 2021-04-20 | Micron Technology, Inc. | Multi-component cell architectures for a memory device |
JP2021048167A (ja) * | 2019-09-17 | 2021-03-25 | キオクシア株式会社 | 半導体記憶装置 |
KR20210048637A (ko) | 2019-10-23 | 2021-05-04 | 삼성전자주식회사 | 가변 저항 메모리 장치 |
US11715520B2 (en) * | 2021-04-05 | 2023-08-01 | Micron Technology, Inc. | Socket structure for spike current suppression in a memory array |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US338946A (en) * | 1886-03-30 | Stem winding and setting watch | ||
US376359A (en) * | 1888-01-10 | Sash-fastener | ||
US377044A (en) * | 1888-01-31 | Henby g | ||
JP3447871B2 (ja) * | 1995-10-26 | 2003-09-16 | 松下電器産業株式会社 | 配線の形成方法及び半導体素子の形成方法 |
JP2001102541A (ja) * | 1999-09-28 | 2001-04-13 | Toshiba Corp | 半導体記憶装置とその製造方法 |
US6313026B1 (en) * | 2000-04-10 | 2001-11-06 | Micron Technology, Inc. | Microelectronic contacts and methods for producing same |
US6365419B1 (en) * | 2000-08-28 | 2002-04-02 | Motorola, Inc. | High density MRAM cell array |
WO2004061863A2 (en) * | 2002-12-31 | 2004-07-22 | Matrix Semiconductor, Inc. | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
US7606059B2 (en) * | 2003-03-18 | 2009-10-20 | Kabushiki Kaisha Toshiba | Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array |
JP2008098461A (ja) * | 2006-10-13 | 2008-04-24 | Renesas Technology Corp | 半導体装置 |
JP5016928B2 (ja) * | 2007-01-10 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP5550239B2 (ja) | 2009-01-26 | 2014-07-16 | 株式会社東芝 | 不揮発性半導体記憶装置、及びその製造方法 |
-
2008
- 2008-08-08 JP JP2008205339A patent/JP5288933B2/ja not_active Expired - Fee Related
-
2009
- 2009-03-06 US US12/399,376 patent/US8222677B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8222677B2 (en) | 2012-07-17 |
US20100032725A1 (en) | 2010-02-11 |
JP2010040977A (ja) | 2010-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5288933B2 (ja) | 半導体記憶装置及びその製造方法 | |
JP5550239B2 (ja) | 不揮発性半導体記憶装置、及びその製造方法 | |
US8441040B2 (en) | Semiconductor memory device | |
JP5175526B2 (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
KR101015325B1 (ko) | 반도체 기억 장치 | |
JP5322533B2 (ja) | 不揮発性半導体記憶装置、及びその製造方法 | |
KR101128620B1 (ko) | 불휘발성 반도체 기억 장치 및 그 제조 방법 | |
JP5159270B2 (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
JP2009130139A (ja) | 不揮発性半導体記憶装置の製造方法 | |
KR102236744B1 (ko) | 3차원 메모리 어레이 | |
JP2012248620A (ja) | 半導体記憶装置の製造方法 | |
TW201347146A (zh) | 半導體記憶裝置 | |
JP2010192718A (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
JP5279879B2 (ja) | 不揮発性半導体記憶装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100915 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121218 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130218 |
|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20130221 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130514 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130604 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5288933 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |