JP5279256B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5279256B2
JP5279256B2 JP2007331342A JP2007331342A JP5279256B2 JP 5279256 B2 JP5279256 B2 JP 5279256B2 JP 2007331342 A JP2007331342 A JP 2007331342A JP 2007331342 A JP2007331342 A JP 2007331342A JP 5279256 B2 JP5279256 B2 JP 5279256B2
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JP
Japan
Prior art keywords
circuit
film
memory
memory element
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007331342A
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English (en)
Japanese (ja)
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JP2008182217A (ja
JP2008182217A5 (enExample
Inventor
清 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007331342A priority Critical patent/JP5279256B2/ja
Publication of JP2008182217A publication Critical patent/JP2008182217A/ja
Publication of JP2008182217A5 publication Critical patent/JP2008182217A5/ja
Application granted granted Critical
Publication of JP5279256B2 publication Critical patent/JP5279256B2/ja
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses

Landscapes

  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
  • Read Only Memory (AREA)
  • Thin Film Transistor (AREA)
JP2007331342A 2006-12-25 2007-12-25 半導体装置 Expired - Fee Related JP5279256B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007331342A JP5279256B2 (ja) 2006-12-25 2007-12-25 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006347278 2006-12-25
JP2006347278 2006-12-25
JP2007331342A JP5279256B2 (ja) 2006-12-25 2007-12-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2008182217A JP2008182217A (ja) 2008-08-07
JP2008182217A5 JP2008182217A5 (enExample) 2010-12-24
JP5279256B2 true JP5279256B2 (ja) 2013-09-04

Family

ID=39542518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007331342A Expired - Fee Related JP5279256B2 (ja) 2006-12-25 2007-12-25 半導体装置

Country Status (2)

Country Link
US (1) US7692999B2 (enExample)
JP (1) JP5279256B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8363365B2 (en) * 2008-06-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5448584B2 (ja) * 2008-06-25 2014-03-19 株式会社半導体エネルギー研究所 半導体装置
JP2010079984A (ja) * 2008-09-25 2010-04-08 Semiconductor Energy Lab Co Ltd 半導体記憶装置の駆動方法
US8755213B2 (en) * 2012-02-29 2014-06-17 International Business Machines Corporation Decoding scheme for bipolar-based diode three-dimensional memory requiring bipolar programming
TWI646658B (zh) * 2014-05-30 2019-01-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6578334B2 (ja) * 2017-09-27 2019-09-18 シャープ株式会社 Ｔｆｔ基板およびｔｆｔ基板を備えた走査アンテナ
US12137552B2 (en) * 2021-12-08 2024-11-05 Nanya Technology Corporation Semiconductor device structure having multiple fuse elements

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08139197A (ja) * 1994-11-11 1996-05-31 Tadahiro Omi シリサイド反応を利用した半導体装置
US5604711A (en) * 1995-05-19 1997-02-18 Cypress Semiconductor, Corporation Low power high voltage switch with gate bias circuit to minimize power consumption
AU2003282941B2 (en) 2002-10-18 2009-03-12 Symbol Technologies, Llc. System and method for minimizing unwanted re-negotiation of a passive RFID tag
JP2004158119A (ja) * 2002-11-06 2004-06-03 Sharp Corp 不揮発性半導体記憶装置
JP4385778B2 (ja) * 2004-01-29 2009-12-16 ソニー株式会社 記憶装置
JP2005316724A (ja) 2004-04-28 2005-11-10 Matsushita Electric Works Ltd アクティブ型ｒｆｉｄタグ
DE602005013692D1 (de) 2004-12-07 2009-05-14 Semiconductor Energy Lab Halbleiterbauelement und verfahren zu seiner herstellung
JP2006191005A (ja) * 2004-12-07 2006-07-20 Semiconductor Energy Lab Co Ltd 記憶装置及びその作製方法並びに半導体装置及びその作製方法
US7675796B2 (en) 2005-12-27 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7760552B2 (en) 2006-03-31 2010-07-20 Semiconductor Energy Laboratory Co., Ltd. Verification method for nonvolatile semiconductor memory device
JP4088323B1 (ja) * 2006-12-06 2008-05-21 シャープ株式会社 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
US20080151602A1 (en) 2008-06-26
US7692999B2 (en) 2010-04-06
JP2008182217A (ja) 2008-08-07

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