JP5258359B2 - 液晶表示装置の製造方法 - Google Patents
液晶表示装置の製造方法 Download PDFInfo
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- JP5258359B2 JP5258359B2 JP2008100595A JP2008100595A JP5258359B2 JP 5258359 B2 JP5258359 B2 JP 5258359B2 JP 2008100595 A JP2008100595 A JP 2008100595A JP 2008100595 A JP2008100595 A JP 2008100595A JP 5258359 B2 JP5258359 B2 JP 5258359B2
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- Prior art keywords
- liquid crystal
- transparent conductive
- upper substrate
- conductive film
- manufacturing
- Prior art date
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 66
- 239000010408 film Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000004313 glare Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical class CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133502—Antiglare, refractive index matching layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
Description
図3a乃至図3cは、本発明の第1実施形態に係る液晶表示装置の製造方法を説明するための断面図である。
図5a乃至図5cは本発明の第2実施形態に係る液晶表示装置の製造方法を説明するための断面図であり、図6は図5cを実際に具現した図である。
110 上部基板
120 下部基板
130 液晶層
200 ITO層
BM ブラックマトリックス
Claims (4)
- (a’)上部基板と多数の薄膜トランジスタを含んだ下部基板とを互いに離隔して対向し、その間に液晶層が充填され、透過及び不透過領域からなる液晶パネルを製作するステップと、
(b’)前記液晶パネルの外部に露出された上部基板上に一定厚みの透明導電膜を蒸着するステップと、
(c’)フォトリソグラフィ工程により前記透明導電膜をパターニングして前記不透過領域と対応するように透明導電膜パターンを形成するステップと、
(d’)前記透明導電膜パターンが形成された上部基板の表面に不均一な凹凸部が形成されるように前記透明導電膜の全体及び前記透明導電膜下部の上部基板の一部を除去し、前記透明導電膜パターンが形成されない上部基板の表面には凹凸部が形成されないように上部基板の一部を除去するためのエッチング工程を遂行するステップと、
を含むことを特徴とする液晶表示装置の製造方法。 - 前記透明導電膜がITO(Indium Tin Oxide)である場合、フッ酸系列のエッチング溶液を使用することを特徴とする請求項1に記載の液晶表示装置の製造方法。
- 前記ステップ(b’)において、
前記透明導電膜は、40nm乃至120nm厚みの範囲で蒸着することを特徴とする請求項1に記載の液晶表示装置の製造方法。 - 前記ステップ(d’)において、
前記エッチング工程の遂行時、前記下部基板の一部も一緒に除去されるようにエッチングすることを特徴とする請求項1に記載の液晶表示装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070035916A KR100843386B1 (ko) | 2007-04-12 | 2007-04-12 | 액정표시장치의 제조방법 |
KR10-2007-0035916 | 2007-04-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008262202A JP2008262202A (ja) | 2008-10-30 |
JP5258359B2 true JP5258359B2 (ja) | 2013-08-07 |
Family
ID=39823587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008100595A Active JP5258359B2 (ja) | 2007-04-12 | 2008-04-08 | 液晶表示装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7718329B2 (ja) |
JP (1) | JP5258359B2 (ja) |
KR (1) | KR100843386B1 (ja) |
CN (1) | CN101285956B (ja) |
TW (1) | TWI434118B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012094630A (ja) * | 2010-10-26 | 2012-05-17 | Toshiba Corp | 半導体発光素子 |
CN104297978B (zh) * | 2014-10-30 | 2017-06-09 | 京东方科技集团股份有限公司 | 一种显示基板的制备方法、显示装置的制备方法 |
US10802325B2 (en) * | 2018-11-05 | 2020-10-13 | Himax Display, Inc. | Display panel |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63228535A (ja) * | 1987-03-18 | 1988-09-22 | 沖電気工業株式会社 | 電極パタ−ン形成方法 |
JP2610698B2 (ja) * | 1990-07-17 | 1997-05-14 | シャープ株式会社 | 反射型液晶表示装置の製造方法 |
JP3531995B2 (ja) * | 1995-03-27 | 2004-05-31 | 株式会社東芝 | 液晶表示装置の製造方法 |
JPH11264967A (ja) * | 1998-03-17 | 1999-09-28 | Toshiba Corp | 液晶表示装置 |
JP2000231007A (ja) * | 1999-02-09 | 2000-08-22 | Ricoh Opt Ind Co Ltd | 凹型微細形状のアレイ状パターン形成方法及びその形成方法を用いて製作される平板型レンズアレイ及び液晶表示素子及び平板型オイルトラップ |
KR100345068B1 (ko) * | 1999-06-21 | 2002-07-19 | 현대엘씨디주식회사 | 유기 전계발광 표시소자의 제조방법 |
US6946679B2 (en) * | 2000-01-13 | 2005-09-20 | Seiko Epson Corporation | Liquid crystal display device, manufacturing method therefor, and electronic apparatus |
KR100776756B1 (ko) * | 2001-08-01 | 2007-11-19 | 삼성전자주식회사 | 반사-투과형 액정표시장치 및 이의 제조 방법 |
JP4389585B2 (ja) * | 2001-10-19 | 2009-12-24 | 旭硝子株式会社 | 透明導電性酸化物膜付き基体および光電変換素子 |
KR100872494B1 (ko) * | 2002-12-31 | 2008-12-05 | 엘지디스플레이 주식회사 | 액정 표시 장치용 어레이 기판의 제조 방법 |
JP4207599B2 (ja) * | 2003-02-24 | 2009-01-14 | ソニー株式会社 | 液晶パネルの製造方法 |
US7348222B2 (en) * | 2003-06-30 | 2008-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device |
EP1724840B1 (en) * | 2004-02-20 | 2013-05-08 | Sharp Kabushiki Kaisha | Photoelectric cell |
KR100611754B1 (ko) * | 2004-05-19 | 2006-08-10 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자의 제조 방법 |
JP2007025110A (ja) * | 2005-07-14 | 2007-02-01 | Alps Electric Co Ltd | 表示素子及び表示素子の製造方法並びに表示素子を備えた電子機器 |
-
2007
- 2007-04-12 KR KR1020070035916A patent/KR100843386B1/ko active IP Right Grant
-
2008
- 2008-04-03 TW TW097112345A patent/TWI434118B/zh active
- 2008-04-08 US US12/099,630 patent/US7718329B2/en active Active
- 2008-04-08 JP JP2008100595A patent/JP5258359B2/ja active Active
- 2008-04-09 CN CN2008100906909A patent/CN101285956B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20080254559A1 (en) | 2008-10-16 |
TW200844619A (en) | 2008-11-16 |
JP2008262202A (ja) | 2008-10-30 |
US7718329B2 (en) | 2010-05-18 |
CN101285956A (zh) | 2008-10-15 |
TWI434118B (zh) | 2014-04-11 |
KR100843386B1 (ko) | 2008-07-03 |
CN101285956B (zh) | 2012-06-13 |
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