JP5255279B2 - 電極を基板内の他の導電性部材に接続する導電性部材を含む電子デバイス、および電子デバイスを形成するためのプロセス - Google Patents

電極を基板内の他の導電性部材に接続する導電性部材を含む電子デバイス、および電子デバイスを形成するためのプロセス Download PDF

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JP5255279B2
JP5255279B2 JP2007549671A JP2007549671A JP5255279B2 JP 5255279 B2 JP5255279 B2 JP 5255279B2 JP 2007549671 A JP2007549671 A JP 2007549671A JP 2007549671 A JP2007549671 A JP 2007549671A JP 5255279 B2 JP5255279 B2 JP 5255279B2
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conductive member
electrode
organic layer
forming
conductive
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Expired - Fee Related
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JP2007549671A
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Japanese (ja)
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JP2008527424A5 (enExample
JP2008527424A (ja
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ユー ガン
プラカッシュ シーバ
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EIDP Inc
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EI Du Pont de Nemours and Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H10D64/01328—Aspects related to lithography, isolation or planarisation of the conductor by defining the conductor using a sidewall spacer mask, a transformation under a mask or a plating at a sidewall
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/156—Hole transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2007549671A 2004-12-29 2005-12-29 電極を基板内の他の導電性部材に接続する導電性部材を含む電子デバイス、および電子デバイスを形成するためのプロセス Expired - Fee Related JP5255279B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/025,110 2004-12-29
US11/025,110 US7189991B2 (en) 2004-12-29 2004-12-29 Electronic devices comprising conductive members that connect electrodes to other conductive members within a substrate and processes for forming the electronic devices
PCT/US2005/047519 WO2006072024A2 (en) 2004-12-29 2005-12-29 Electronic devices comprising conductive members that connect electrodes to other conductive members within a substrate and processes for forming the electronic devices

Publications (3)

Publication Number Publication Date
JP2008527424A JP2008527424A (ja) 2008-07-24
JP2008527424A5 JP2008527424A5 (enExample) 2009-02-19
JP5255279B2 true JP5255279B2 (ja) 2013-08-07

Family

ID=36610342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007549671A Expired - Fee Related JP5255279B2 (ja) 2004-12-29 2005-12-29 電極を基板内の他の導電性部材に接続する導電性部材を含む電子デバイス、および電子デバイスを形成するためのプロセス

Country Status (7)

Country Link
US (2) US7189991B2 (enExample)
EP (1) EP1839336A4 (enExample)
JP (1) JP5255279B2 (enExample)
KR (1) KR101261653B1 (enExample)
CN (1) CN100505288C (enExample)
TW (1) TWI377711B (enExample)
WO (1) WO2006072024A2 (enExample)

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US7189991B2 (en) * 2004-12-29 2007-03-13 E. I. Du Pont De Nemours And Company Electronic devices comprising conductive members that connect electrodes to other conductive members within a substrate and processes for forming the electronic devices
US7563392B1 (en) * 2004-12-30 2009-07-21 E.I. Du Pont De Nemours And Company Organic conductive compositions and structures
DE102005037290A1 (de) * 2005-08-08 2007-02-22 Siemens Ag Flachbilddetektor
US7642109B2 (en) * 2005-08-29 2010-01-05 Eastman Kodak Company Electrical connection in OLED devices
US7638416B2 (en) * 2005-12-13 2009-12-29 Versatilis Llc Methods of making semiconductor-based electronic devices on a wire and articles that can be made using such devices
US7700471B2 (en) * 2005-12-13 2010-04-20 Versatilis Methods of making semiconductor-based electronic devices on a wire and articles that can be made thereby
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
US8247824B2 (en) * 2005-12-19 2012-08-21 Matthew Stainer Electronic devices comprising electrodes that connect to conductive members within a substrate and processes for forming the electronic devices
US7314786B1 (en) * 2006-06-16 2008-01-01 International Business Machines Corporation Metal resistor, resistor material and method
US8153029B2 (en) * 2006-12-28 2012-04-10 E.I. Du Pont De Nemours And Company Laser (230NM) ablatable compositions of electrically conducting polymers made with a perfluoropolymeric acid applications thereof
US8227877B2 (en) * 2010-07-14 2012-07-24 Macronix International Co., Ltd. Semiconductor bio-sensors and methods of manufacturing the same
CN114616515A (zh) * 2019-10-10 2022-06-10 康宁公司 用于形成包覆电极的系统及方法
US11929388B2 (en) * 2021-09-23 2024-03-12 Apple Inc. Local passive matrix displays

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JP3530362B2 (ja) * 1996-12-19 2004-05-24 三洋電機株式会社 自発光型画像表示装置
KR100257811B1 (ko) * 1997-10-24 2000-06-01 구본준 액정표시장치의 기판의 제조방법
US6587086B1 (en) * 1999-10-26 2003-07-01 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
TW484238B (en) * 2000-03-27 2002-04-21 Semiconductor Energy Lab Light emitting device and a method of manufacturing the same
KR100437475B1 (ko) * 2001-04-13 2004-06-23 삼성에스디아이 주식회사 평판 디스플레이 장치용 표시 소자 제조 방법
KR100495702B1 (ko) * 2001-04-13 2005-06-14 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
US6900470B2 (en) * 2001-04-20 2005-05-31 Kabushiki Kaisha Toshiba Display device and method of manufacturing the same
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KR100443831B1 (ko) * 2001-12-20 2004-08-09 엘지.필립스 엘시디 주식회사 액정표시소자의 제조 방법
JP4310984B2 (ja) * 2002-02-06 2009-08-12 株式会社日立製作所 有機発光表示装置
KR100941129B1 (ko) * 2002-03-26 2010-02-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 및 그의 제조방법
KR100435054B1 (ko) * 2002-05-03 2004-06-07 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
KR100478759B1 (ko) * 2002-08-20 2005-03-24 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
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JP3861816B2 (ja) 2003-01-24 2006-12-27 住友電気工業株式会社 光送受信モジュール及びその製造方法
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JP3915734B2 (ja) * 2003-05-12 2007-05-16 ソニー株式会社 蒸着マスクおよびこれを用いた表示装置の製造方法、ならびに表示装置
US6953705B2 (en) * 2003-07-22 2005-10-11 E. I. Du Pont De Nemours And Company Process for removing an organic layer during fabrication of an organic electronic device
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US7189991B2 (en) * 2004-12-29 2007-03-13 E. I. Du Pont De Nemours And Company Electronic devices comprising conductive members that connect electrodes to other conductive members within a substrate and processes for forming the electronic devices
KR100700650B1 (ko) * 2005-01-05 2007-03-27 삼성에스디아이 주식회사 유기 전계 발광 장치 및 그 제조 방법
US7554261B2 (en) * 2006-05-05 2009-06-30 Eastman Kodak Company Electrical connection in OLED devices

Also Published As

Publication number Publication date
CN100505288C (zh) 2009-06-24
KR101261653B1 (ko) 2013-05-06
WO2006072024A3 (en) 2007-05-18
TWI377711B (en) 2012-11-21
JP2008527424A (ja) 2008-07-24
CN101091254A (zh) 2007-12-19
EP1839336A4 (en) 2010-12-15
US7488975B2 (en) 2009-02-10
US20060138401A1 (en) 2006-06-29
US7189991B2 (en) 2007-03-13
EP1839336A2 (en) 2007-10-03
KR20070093137A (ko) 2007-09-17
WO2006072024A2 (en) 2006-07-06
US20070085077A1 (en) 2007-04-19
TW200633283A (en) 2006-09-16

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