JP5253158B2 - ポストおよびペネトレーション相互接続 - Google Patents
ポストおよびペネトレーション相互接続 Download PDFInfo
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- JP5253158B2 JP5253158B2 JP2008517112A JP2008517112A JP5253158B2 JP 5253158 B2 JP5253158 B2 JP 5253158B2 JP 2008517112 A JP2008517112 A JP 2008517112A JP 2008517112 A JP2008517112 A JP 2008517112A JP 5253158 B2 JP5253158 B2 JP 5253158B2
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Description
新規のフォトリソグラフィのパターン化を行って、接点が作製される領域を画成する(図80)。
注:展性層は、スタンドオフ、拡散、キャップおよびバリア層の何れの組み合わせで構成してもよいが、ここでは、展性層は拡散およびキャップ層の組み合わせである。
Claims (19)
- 2つのチップを物理的かつ電気的に接合する方法であって、
第1チップの導電性を有する第1接点の接点パッド面の外面に一つ以上の谷を形成するステップであって、前記第1接点は剛性材料を含む、ステップと;
前記第1接点を、第2チップ上の対応する導電性を有する第2接点にアライメントさせるステップであって、前記第2接点は展性材料を含む、ステップと;
前記アライメントさせた第1接点を、前記第2接点に接触させるステップと;
前記剛性材料を前記展性材料に入り込ませることにより、前記第1チップと前記第2チップとの間に導電性を有する第1接続を形成するのに十分な圧力を前記第1および第2チップへかけている間、前記第1および第2接点の温度を前記剛性材料の液相温度および前記展性材料の液相温度未満である上昇温度まで昇温するステップと;
前記導電性を有する第1接続の形成に続いて、前記第1および第2接点を周囲温度まで冷却するステップと;
を備える方法。 - 前記一つ以上の谷を形成するステップが、前記第1接点の前記接点パッド面の前記外面に一つ以上の同心の閉じた形状の環状谷を形成するステップを含む、
請求項1の方法。 - 前記一つ以上の谷を形成するステップが、少なくとも2つの個別の、隆起バンプを生成するために前記第1接点の前記接点パッド面の一部を除去するステップを含む、
請求項1の方法。 - 前記アライメントさせるステップに先立って、前記方法が、前記第1接点の接点パッド面をエッチングするステップを備える、
請求項1の方法。 - 前記剛性材料として金属または合金の内の一つを選択するするステップを更に備え、前記金属および前記合金の融点が、前記展性材料の融点より少なくとも50℃高い、
請求項1の方法。 - 前記剛性材料のための金属または合金の内の一つを選択する前記ステップが、第1材料、第2材料、または第3材料の内の一つを選択するステップを含み、前記第1材料は、Al、Au、Co、Cr、Cu、Ni、Pd、Pt、Ta、Wの内の一つを含み、前記第2材料は、Al、Au、Co、Cr、Cu、Ni、Pd、Pt、Ta、またはWの合金を含み、前記第3材料は、TaN、TaW、Ti/Pd、Ti/Pd/Pt、Ti/Pd/Pt/Au、Ti/Pf/Au、Ti/Pt、Ti/Pt/Au、TiWの内の一つを含む、
請求項5の方法。 - 前記展性材料として金属または合金の内の一つを選択するするステップを更に備え、前記金属または前記合金の融点が、前記剛性材料の融点より少なくとも50℃低い、
請求項1の方法。 - 前記展性材料として金属または合金を選択する前記ステップが、第4材料、第5材料、または第6材料の内の一つを選択するステップを含み、前記第4材料は、Sn、In、Pb、Bi、Al、Zn、Mgの内の一つを含み、前記第5材料は、Sn、In、Pb、Bi、Al、Zn、またはMg、の合金を含み、前記第6材料は、融点が1000℃未満の金属または合金を含む、
請求項7の方法。 - 前記第1および第2接点の前記温度を昇温する前記ステップが、前記第1チップの前記導電性を有する第1接点を前記第2チップ上の対応する前記導電性を有する第2接点にアライメントさせる前記ステップ、または、前記アライメントさせた前記第1接点を前記第2接点に接触させる前記ステップの内の少なくとも一つと同時に起きる、
請求項1の方法。 - 前記第1チップの前記導電性を有する第1接点を前記第2チップ上の対応する前記導電性を有する第2接点にアライメントさせる前記ステップに先だって、少なくとも前記第1チップ上の場所から前記第1チップの表面より上の場所に突出するポスト上に前記第1接点を生成するステップをさらに含む、
請求項1の方法。 - 2つのチップを物理的かつ電気的に接合する方法であって、
第1チップの導電性を有する第1接点を、第2チップ上の対応する導電性を有する第2接点にアライメントさせるステップであって、前記第1接点は剛性材料を含み、前記第2接点は展性材料を含む、ステップと;
前記アライメントさせた第1接点を、前記第2接点に接触させるステップと;
前記剛性材料を前記展性材料に入り込ませることにより、前記第1チップと前記第2チップとの間に導電性を有する第1接続を形成するのに十分な圧力を前記第1および第2チップへかけている間、前記第1および第2接点の温度を少なくとも前記剛性材料の液相温度未満である上昇温度まで昇温するステップと;
前記導電性を有する第1接続の形成に続いて、前記第1および第2接点を周囲温度まで冷却するステップと;
前記冷却するステップに続き、少なくとも前記剛性材料の前記液相温度未満である分離温度まで前記第1および第2チップを昇温するステップと;
前記第1チップを前記第2チップから分離するステップと;
を備える方法。 - 前記分離するステップに続いて、前記第1接点を、第3チップの相対的に展性の高い導電性を有する第5接点へ取り付けるステップを更に備える、
請求項11の方法。 - 前記分離するステップに続いて、前記第2接点を、第3チップの剛性のある導電性を有する第6接点へ取り付けるステップを更に備える、
請求項11の方法。 - 2つのチップを物理的かつ電気的に接合する方法であって、
第1チップの導電性を有する第1接点の接点パッド面の外面に一つ以上の谷を形成するステップであって、前記第1接点は剛性材料を含む、ステップと;
前記第1接点を、第2チップ上の対応する導電性を有する第2接点にアライメントさせるステップであって、前記第2接点は展性材料を含む、ステップと;
前記アライメントさせた第1接点を、前記第2接点に接触させるステップと;
前記剛性材料を前記展性材料に入り込ませることにより、前記第1チップと前記第2チップとの間に導電性を有する第1接続を形成するのに十分な圧力を前記第1および第2チップへかけている間、前記第1および第2接点の温度を少なくとも前記剛性材料の液相温度未満である上昇温度まで昇温するステップと;
前記導電性を有する第1接続の形成に続いて、前記第1および第2接点を周囲温度まで冷却するステップと;
前記第1チップまたは前記第2チップの一方の導電性を有する第3接点を、第4チップ上の対応する導電性を有する第4接点にアライメントさせるステップであって、前記第3接点は第7材料を含み、前記第4接点は第8材料を含み、前記第7材料または前記第8材料の一方は剛性があり、前記第7材料または前記第8材料の他方は比較的展性がある、ステップと;
前記アライメントさせた第3接点を、前記第4接点に接触させるステップと;
前記第7材料または前記第8材料の内の前記剛性のある方を前記第7材料または前記第8材料の内の前記展性がある方に入り込ませることにより、前記第1接続を壊さずに、前記第1または第2チップの内の一つと前記第4チップとの間に導電性を有する第2接続を形成するのに十分な圧力をかけている間、少なくとも前記第3および第4接点の温度を前記第7材料または前記第8材料の内の前記剛性のある方の液相温度未満である上昇温度まで昇温するステップと;
前記導電性を有する第2接続の形成に続いて、前記第3および第4接点を周囲温度まで冷却するステップと;
を備える方法。 - 第1チップの導電性を有する第1接点の接点パッド面の外面に一つ以上の谷を形成する手段であって、前記第1接点は剛性材料を含む、手段と;
前記第1接点を、第2チップ上の対応する導電性を有する第2接点にアライメントさせる手段であって、前記第2接点は展性材料を含む、手段と;
前記アライメントさせた第1接点を、前記第2接点に接触させる手段と;
前記剛性材料を前記展性材料に入り込ませることにより、前記第1チップと前記第2チップとの間に導電性を有する第1接続を形成するのに十分な圧力を前記第1および第2チップへかけている間、前記第1および第2接点の温度を前記剛性材料の液相温度および前記展性材料の液相温度未満である上昇温度まで昇温する手段と;
前記導電性を有する第1接続の形成に続いて、前記第1および第2接点を周囲温度まで冷却する手段と;
を備えるシステム。 - 前記展性材料が、金属または合金の内の一つを含み、前記金属または前記合金の融点が、前記剛性材料の融点より少なくとも50℃低い、
請求項15のシステム。 - 前記第1接点が、第1材料、第2材料、または第3材料の内の一つを含み、前記第1材料は、Al、Au、Co、Cr、Cu、Ni、Pd、Pt、Ta、Wの内の一つを含み、前記第2材料は、Al、Au、Co、Cr、Cu、Ni、Pd、Pt、Ta、またはWの合金を含み、前記第3材料は、TaN、TaW、Ti/Pd、Ti/Pd/Pt、Ti/Pd/Pt/Au、Ti/Pf/Au、Ti/Pt、Ti/Pt/Au、TiWの内の一つを含む、
請求項15のシステム。 - 前記第2接点が、第4材料、第5材料、または第6材料の内の一つを含み、前記第4材料は、Sn、In、Pb、Bi、Al、Zn、Mgの内の一つを含み、前記第5材料は、Sn、In、Pb、Bi、Al、Zn、またはMg、の合金を含み、前記第6材料は、融点が1000℃未満の金属または合金を含む、
請求項15のシステム。 - 前記第1チップは、少なくとも前記第1チップ上の場所から前記第1チップの表面より上の場所に突出するポストを備え、前記ポストは、前記第1接点の少なくとも一部のためのサポートを形成する、
請求項15のシステム。
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-
2006
- 2006-06-14 WO PCT/US2006/023364 patent/WO2006138492A2/en active Application Filing
- 2006-06-14 KR KR1020077029402A patent/KR101419548B1/ko active IP Right Grant
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WO2006138492A3 (en) | 2007-03-29 |
KR101419548B1 (ko) | 2014-07-25 |
WO2006138492A2 (en) | 2006-12-28 |
KR20080018896A (ko) | 2008-02-28 |
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