JP5243699B2 - 試料のエッジ検査のためのシステム及び方法 - Google Patents

試料のエッジ検査のためのシステム及び方法 Download PDF

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Publication number
JP5243699B2
JP5243699B2 JP2006156327A JP2006156327A JP5243699B2 JP 5243699 B2 JP5243699 B2 JP 5243699B2 JP 2006156327 A JP2006156327 A JP 2006156327A JP 2006156327 A JP2006156327 A JP 2006156327A JP 5243699 B2 JP5243699 B2 JP 5243699B2
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Japan
Prior art keywords
edge
sample
light
wafer
inspection
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Japanese (ja)
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JP2006343331A (ja
JP2006343331A5 (enExample
Inventor
カート・リンドセイ・ヘラー
スティーブ・ウィフェン・クイ
ジャレッド・レラ
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KLA Corp
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KLA Corp
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Publication of JP2006343331A5 publication Critical patent/JP2006343331A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95623—Inspecting patterns on the surface of objects using a spatial filtering method

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2006156327A 2005-06-06 2006-06-05 試料のエッジ検査のためのシステム及び方法 Active JP5243699B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/145,874 2005-06-06
US11/145,874 US7728965B2 (en) 2005-06-06 2005-06-06 Systems and methods for inspecting an edge of a specimen

Publications (3)

Publication Number Publication Date
JP2006343331A JP2006343331A (ja) 2006-12-21
JP2006343331A5 JP2006343331A5 (enExample) 2009-07-16
JP5243699B2 true JP5243699B2 (ja) 2013-07-24

Family

ID=37493791

Family Applications (1)

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JP2006156327A Active JP5243699B2 (ja) 2005-06-06 2006-06-05 試料のエッジ検査のためのシステム及び方法

Country Status (2)

Country Link
US (1) US7728965B2 (enExample)
JP (1) JP5243699B2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
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US7605913B2 (en) * 2004-12-19 2009-10-20 Kla-Tencor Corporation System and method for inspecting a workpiece surface by analyzing scattered light in a front quartersphere region above the workpiece
JP5279992B2 (ja) * 2006-07-13 2013-09-04 株式会社日立ハイテクノロジーズ 表面検査方法及び装置
US7787114B2 (en) * 2007-06-06 2010-08-31 Kla-Tencor Technologies Corp. Systems and methods for inspecting a specimen with light at varying power levels
US7746459B2 (en) * 2007-08-10 2010-06-29 Kla-Tencor Technologies Corp. Systems configured to inspect a wafer
US7623229B1 (en) 2008-10-07 2009-11-24 Kla-Tencor Corporation Systems and methods for inspecting wafers
JP2011075406A (ja) * 2009-09-30 2011-04-14 Hitachi High-Technologies Corp 表面欠陥検査方法及びその装置
JP5216752B2 (ja) 2009-11-18 2013-06-19 株式会社日立ハイテクノロジーズ 欠陥検出方法及び欠陥検出装置並びにこれを備えた欠陥観察装置
KR101908749B1 (ko) 2010-12-16 2018-10-16 케이엘에이-텐코 코포레이션 웨이퍼 검사
US9279774B2 (en) * 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US8786850B2 (en) * 2012-10-29 2014-07-22 Kla-Tencor Corporation Illumination energy management in surface inspection
US9201019B2 (en) * 2013-05-30 2015-12-01 Seagate Technology Llc Article edge inspection
US9809898B2 (en) * 2013-06-26 2017-11-07 Lam Research Corporation Electroplating and post-electrofill systems with integrated process edge imaging and metrology systems
WO2015039245A1 (en) * 2013-09-18 2015-03-26 Ats Automation Tooling Systems Inc. System and method for decoration inspection on transparent media
US9822460B2 (en) 2014-01-21 2017-11-21 Lam Research Corporation Methods and apparatuses for electroplating and seed layer detection
US9377416B2 (en) 2014-05-17 2016-06-28 Kla-Tencor Corp. Wafer edge detection and inspection
US9885671B2 (en) 2014-06-09 2018-02-06 Kla-Tencor Corporation Miniaturized imaging apparatus for wafer edge
US9645097B2 (en) 2014-06-20 2017-05-09 Kla-Tencor Corporation In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning
US9735035B1 (en) 2016-01-29 2017-08-15 Lam Research Corporation Methods and apparatuses for estimating on-wafer oxide layer reduction effectiveness via color sensing
KR101992778B1 (ko) * 2017-11-01 2019-06-25 에스케이실트론 주식회사 웨이퍼 및 그 형상 분석 방법
US10811290B2 (en) * 2018-05-23 2020-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for inspection stations
US10942135B2 (en) * 2018-11-14 2021-03-09 Kla Corporation Radial polarizer for particle detection
US10948423B2 (en) 2019-02-17 2021-03-16 Kla Corporation Sensitive particle detection with spatially-varying polarization rotator and polarizer
CN112881428B (zh) * 2021-01-20 2024-08-09 苏州协同创新智能制造装备有限公司 一种基于激光测距的曲面屏幕边缘外弧缺陷检测的方法

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US6271916B1 (en) * 1994-03-24 2001-08-07 Kla-Tencor Corporation Process and assembly for non-destructive surface inspections
JPH07306154A (ja) * 1994-05-10 1995-11-21 Hitachi Electron Eng Co Ltd ウエハの異物検出方法
US6201601B1 (en) * 1997-09-19 2001-03-13 Kla-Tencor Corporation Sample inspection system
JP3930129B2 (ja) * 1997-11-21 2007-06-13 株式会社トプコン 表面検査方法及び装置
JP3425590B2 (ja) * 1998-06-04 2003-07-14 三菱住友シリコン株式会社 端部傷検査方法およびその装置
JP3996728B2 (ja) * 2000-03-08 2007-10-24 株式会社日立製作所 表面検査装置およびその方法
US6590645B1 (en) * 2000-05-04 2003-07-08 Kla-Tencor Corporation System and methods for classifying anomalies of sample surfaces
US6545752B1 (en) * 2000-07-07 2003-04-08 Daitron, Inc. Method and apparatus for detecting defects along the edge of electronic media
KR100403862B1 (ko) * 2001-01-26 2003-11-01 어플라이드비전텍(주) 반도체 웨이퍼 검사 장치 및 그 방법
JP4230674B2 (ja) * 2001-03-01 2009-02-25 株式会社日立製作所 欠陥検査装置およびその方法
US6538730B2 (en) * 2001-04-06 2003-03-25 Kla-Tencor Technologies Corporation Defect detection system
JP3728495B2 (ja) * 2001-10-05 2005-12-21 独立行政法人産業技術総合研究所 多層膜マスク欠陥検査方法及び装置
JP3629244B2 (ja) * 2002-02-19 2005-03-16 本多エレクトロン株式会社 ウエーハ用検査装置
KR100445457B1 (ko) * 2002-02-25 2004-08-21 삼성전자주식회사 웨이퍼 후면 검사 장치 및 검사 방법
US7130039B2 (en) * 2002-04-18 2006-10-31 Kla-Tencor Technologies Corporation Simultaneous multi-spot inspection and imaging
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US7340087B2 (en) * 2003-07-14 2008-03-04 Rudolph Technologies, Inc. Edge inspection
US6947588B2 (en) * 2003-07-14 2005-09-20 August Technology Corp. Edge normal process
US7280200B2 (en) * 2003-07-18 2007-10-09 Ade Corporation Detection of a wafer edge using collimated light
US7130036B1 (en) * 2003-09-16 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for inspection of an entire wafer surface using multiple detection channels
US7433031B2 (en) * 2003-10-29 2008-10-07 Core Tech Optical, Inc. Defect review system with 2D scanning and a ring detector
US7280197B1 (en) * 2004-07-27 2007-10-09 Kla-Tehcor Technologies Corporation Wafer edge inspection apparatus
US7161669B2 (en) * 2005-05-06 2007-01-09 Kla- Tencor Technologies Corporation Wafer edge inspection
US7161667B2 (en) * 2005-05-06 2007-01-09 Kla-Tencor Technologies Corporation Wafer edge inspection

Also Published As

Publication number Publication date
JP2006343331A (ja) 2006-12-21
US20060274304A1 (en) 2006-12-07
US7728965B2 (en) 2010-06-01

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