JP5242643B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5242643B2
JP5242643B2 JP2010193964A JP2010193964A JP5242643B2 JP 5242643 B2 JP5242643 B2 JP 5242643B2 JP 2010193964 A JP2010193964 A JP 2010193964A JP 2010193964 A JP2010193964 A JP 2010193964A JP 5242643 B2 JP5242643 B2 JP 5242643B2
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JP
Japan
Prior art keywords
wiring
graphene
layer
semiconductor device
core material
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Active
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JP2010193964A
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English (en)
Japanese (ja)
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JP2012054303A5 (enExample
JP2012054303A (ja
Inventor
真 和田
雄一 山崎
明広 梶田
敦子 坂田
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Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2010193964A priority Critical patent/JP5242643B2/ja
Priority to TW100129370A priority patent/TWI482290B/zh
Priority to KR1020110087934A priority patent/KR101298789B1/ko
Publication of JP2012054303A publication Critical patent/JP2012054303A/ja
Publication of JP2012054303A5 publication Critical patent/JP2012054303A5/ja
Application granted granted Critical
Publication of JP5242643B2 publication Critical patent/JP5242643B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2010193964A 2010-08-31 2010-08-31 半導体装置 Active JP5242643B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010193964A JP5242643B2 (ja) 2010-08-31 2010-08-31 半導体装置
TW100129370A TWI482290B (zh) 2010-08-31 2011-08-17 半導體裝置
KR1020110087934A KR101298789B1 (ko) 2010-08-31 2011-08-31 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010193964A JP5242643B2 (ja) 2010-08-31 2010-08-31 半導体装置

Publications (3)

Publication Number Publication Date
JP2012054303A JP2012054303A (ja) 2012-03-15
JP2012054303A5 JP2012054303A5 (enExample) 2012-10-04
JP5242643B2 true JP5242643B2 (ja) 2013-07-24

Family

ID=45907356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010193964A Active JP5242643B2 (ja) 2010-08-31 2010-08-31 半導体装置

Country Status (3)

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JP (1) JP5242643B2 (enExample)
KR (1) KR101298789B1 (enExample)
TW (1) TWI482290B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5150690B2 (ja) * 2010-09-16 2013-02-20 株式会社東芝 半導体装置及び半導体装置の製造方法
JP5637795B2 (ja) 2010-10-05 2014-12-10 株式会社東芝 装置
US9472450B2 (en) * 2012-05-10 2016-10-18 Samsung Electronics Co., Ltd. Graphene cap for copper interconnect structures
JP5755618B2 (ja) 2012-09-06 2015-07-29 株式会社東芝 半導体装置
JP5851369B2 (ja) 2012-09-10 2016-02-03 株式会社東芝 半導体装置の製造方法
JP5972735B2 (ja) 2012-09-21 2016-08-17 株式会社東芝 半導体装置
KR101910579B1 (ko) 2012-10-29 2018-10-22 삼성전자주식회사 튜너블 배리어를 구비한 그래핀 스위칭 소자
JP5813678B2 (ja) 2013-02-15 2015-11-17 株式会社東芝 半導体装置
JP2015032662A (ja) 2013-08-01 2015-02-16 株式会社東芝 半導体装置及びその製造方法
JP6162555B2 (ja) 2013-09-18 2017-07-12 株式会社東芝 半導体装置、超伝導装置およびその製造方法
JP2016063095A (ja) 2014-09-18 2016-04-25 株式会社東芝 配線及びその製造方法
JP2016063096A (ja) 2014-09-18 2016-04-25 株式会社東芝 グラフェン配線とその製造方法
JP2016171245A (ja) 2015-03-13 2016-09-23 株式会社東芝 半導体装置およびその製造方法
JP2017050419A (ja) 2015-09-02 2017-03-09 株式会社東芝 半導体装置とその製造方法
JP2017050503A (ja) 2015-09-04 2017-03-09 株式会社東芝 半導体装置とその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3129577B2 (ja) * 1993-06-11 2001-01-31 ローム株式会社 半導体集積回路用配線およびその配線の形成方法
JP2006120730A (ja) 2004-10-19 2006-05-11 Fujitsu Ltd 層間配線に多層カーボンナノチューブを用いる配線構造及びその製造方法
US7732859B2 (en) * 2007-07-16 2010-06-08 International Business Machines Corporation Graphene-based transistor
KR101443222B1 (ko) * 2007-09-18 2014-09-19 삼성전자주식회사 그라펜 패턴 및 그의 형성방법
JP5353009B2 (ja) * 2008-01-08 2013-11-27 富士通株式会社 半導体装置の製造方法および半導体装置
US7772059B2 (en) * 2008-01-16 2010-08-10 Texas Instruments Incorporated Method for fabricating graphene transistors on a silicon or SOI substrate
US8467224B2 (en) * 2008-04-11 2013-06-18 Sandisk 3D Llc Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
JP5470779B2 (ja) * 2008-09-03 2014-04-16 富士通株式会社 集積回路装置の製造方法
JP5395542B2 (ja) 2009-07-13 2014-01-22 株式会社東芝 半導体装置
KR101129930B1 (ko) 2010-03-09 2012-03-27 주식회사 하이닉스반도체 반도체 소자 및 그의 형성 방법

Also Published As

Publication number Publication date
TW201234607A (en) 2012-08-16
KR101298789B1 (ko) 2013-08-22
TWI482290B (zh) 2015-04-21
JP2012054303A (ja) 2012-03-15
KR20120022073A (ko) 2012-03-09

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