JP5241237B2 - ｐＭＯＳ半導体構造 - Google Patents

ｐＭＯＳ半導体構造 Download PDF

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Publication number
JP5241237B2
JP5241237B2 JP2007551253A JP2007551253A JP5241237B2 JP 5241237 B2 JP5241237 B2 JP 5241237B2 JP 2007551253 A JP2007551253 A JP 2007551253A JP 2007551253 A JP2007551253 A JP 2007551253A JP 5241237 B2 JP5241237 B2 JP 5241237B2
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Japan
Prior art keywords
tic
dielectric constant
metal
layer
thickness
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Expired - Fee Related
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JP2007551253A
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English (en)
Japanese (ja)
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JP2008530769A (ja
JP2008530769A5 (https=
Inventor
カルガリー、アレサンドロ、シー
グリベルヤック、マイケル、エイ
レーシー、ディアンヌ、エル
マクフィーリ、フェントン、アール
サエンガー、キャサリン、エル
ザファー、サフィ
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International Business Machines Corp
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International Business Machines Corp
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Publication of JP2008530769A5 publication Critical patent/JP2008530769A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/669—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the conductor further comprising additional layers of alloy material, compound material or organic material, e.g. TaN/TiAlN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2007551253A 2005-01-13 2005-12-02 ｐＭＯＳ半導体構造 Expired - Fee Related JP5241237B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/034,597 US7667277B2 (en) 2005-01-13 2005-01-13 TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
US11/034,597 2005-01-13
PCT/US2005/043552 WO2006076086A2 (en) 2005-01-13 2005-12-02 Tic mos devices on high-k-dielectric gate stacks

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012108582A Division JP5511889B2 (ja) 2005-01-13 2012-05-10 ＴｉＣ膜を含む半導体構造を形成する方法

Publications (3)

Publication Number Publication Date
JP2008530769A JP2008530769A (ja) 2008-08-07
JP2008530769A5 JP2008530769A5 (https=) 2008-10-16
JP5241237B2 true JP5241237B2 (ja) 2013-07-17

Family

ID=36678065

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007551253A Expired - Fee Related JP5241237B2 (ja) 2005-01-13 2005-12-02 ｐＭＯＳ半導体構造
JP2012108582A Expired - Fee Related JP5511889B2 (ja) 2005-01-13 2012-05-10 ＴｉＣ膜を含む半導体構造を形成する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012108582A Expired - Fee Related JP5511889B2 (ja) 2005-01-13 2012-05-10 ＴｉＣ膜を含む半導体構造を形成する方法

Country Status (8)

Country Link
US (2) US7667277B2 (https=)
EP (1) EP1842240B1 (https=)
JP (2) JP5241237B2 (https=)
CN (1) CN101443918B (https=)
AT (1) ATE475195T1 (https=)
DE (1) DE602005022493D1 (https=)
TW (1) TWI374540B (https=)
WO (1) WO2006076086A2 (https=)

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US7989902B2 (en) * 2009-06-18 2011-08-02 International Business Machines Corporation Scavenging metal stack for a high-k gate dielectric
US20100327364A1 (en) * 2009-06-29 2010-12-30 Toshiba America Electronic Components, Inc. Semiconductor device with metal gate
US9490179B2 (en) 2010-05-21 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device
AU2011262653B2 (en) * 2010-06-09 2016-06-16 Samsung Electronics Co., Ltd. Mobile communication system and packet control method in the mobile communication system
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US8318550B2 (en) * 2011-04-08 2012-11-27 Micron Technology, Inc. Multilayer select devices and methods related thereto
US9269580B2 (en) * 2011-06-27 2016-02-23 Cree, Inc. Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof
JP2013175593A (ja) * 2012-02-24 2013-09-05 Rohm Co Ltd 半導体装置およびその製造方法
CN103594343A (zh) * 2012-08-13 2014-02-19 中芯国际集成电路制造(上海)有限公司 高k膜的制作方法及晶体管的形成方法
US9679984B2 (en) * 2012-11-07 2017-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate structure with multi-layer composition
US9312136B2 (en) 2014-03-06 2016-04-12 International Business Machines Corporation Replacement metal gate stack for diffusion prevention
US9449887B2 (en) 2014-12-08 2016-09-20 Globalfoundries Inc. Method of forming replacement gate PFET having TiALCO layer for improved NBTI performance
WO2016105402A1 (en) * 2014-12-23 2016-06-30 Intel Corporation Via blocking layer
CN110349915B (zh) * 2019-07-12 2021-07-30 中国科学院微电子研究所 一种半导体器件制备方法及制备得到的半导体器件
CN113025032B (zh) * 2021-03-09 2022-04-15 电子科技大学 一种高介电性能自愈合聚氨酯复合材料及其制备的方法和制动应用
US20230028460A1 (en) * 2021-07-23 2023-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors

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Also Published As

Publication number Publication date
JP2008530769A (ja) 2008-08-07
TWI374540B (en) 2012-10-11
WO2006076086A3 (en) 2009-04-16
WO2006076086A2 (en) 2006-07-20
CN101443918B (zh) 2011-07-06
JP2012191220A (ja) 2012-10-04
EP1842240A2 (en) 2007-10-10
EP1842240A4 (en) 2009-10-14
JP5511889B2 (ja) 2014-06-04
ATE475195T1 (de) 2010-08-15
US20100015790A1 (en) 2010-01-21
EP1842240B1 (en) 2010-07-21
CN101443918A (zh) 2009-05-27
US7667277B2 (en) 2010-02-23
DE602005022493D1 (de) 2010-09-02
TW200629539A (en) 2006-08-16
US20060163630A1 (en) 2006-07-27
US8288237B2 (en) 2012-10-16

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