TWI374540B - Tic as a thermally stable p-metal carbide on high k sio2 gate stacks - Google Patents

Tic as a thermally stable p-metal carbide on high k sio2 gate stacks Download PDF

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Publication number
TWI374540B
TWI374540B TW095100287A TW95100287A TWI374540B TW I374540 B TWI374540 B TW I374540B TW 095100287 A TW095100287 A TW 095100287A TW 95100287 A TW95100287 A TW 95100287A TW I374540 B TWI374540 B TW I374540B
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TW
Taiwan
Prior art keywords
type semiconductor
semiconductor structure
interface layer
dielectric material
tic
Prior art date
Application number
TW095100287A
Other languages
English (en)
Chinese (zh)
Other versions
TW200629539A (en
Inventor
Alessandro C Callegari
Michael A Gribelyuk
Dianne L Lacey
Fenton R Mcfeely
Katherine L Saenger
Sufi Zafar
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Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Ibm filed Critical Ibm
Publication of TW200629539A publication Critical patent/TW200629539A/zh
Application granted granted Critical
Publication of TWI374540B publication Critical patent/TWI374540B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/669—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the conductor further comprising additional layers of alloy material, compound material or organic material, e.g. TaN/TiAlN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW095100287A 2005-01-13 2006-01-04 Tic as a thermally stable p-metal carbide on high k sio2 gate stacks TWI374540B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/034,597 US7667277B2 (en) 2005-01-13 2005-01-13 TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks

Publications (2)

Publication Number Publication Date
TW200629539A TW200629539A (en) 2006-08-16
TWI374540B true TWI374540B (en) 2012-10-11

Family

ID=36678065

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100287A TWI374540B (en) 2005-01-13 2006-01-04 Tic as a thermally stable p-metal carbide on high k sio2 gate stacks

Country Status (8)

Country Link
US (2) US7667277B2 (https=)
EP (1) EP1842240B1 (https=)
JP (2) JP5241237B2 (https=)
CN (1) CN101443918B (https=)
AT (1) ATE475195T1 (https=)
DE (1) DE602005022493D1 (https=)
TW (1) TWI374540B (https=)
WO (1) WO2006076086A2 (https=)

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US9269580B2 (en) * 2011-06-27 2016-02-23 Cree, Inc. Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof
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US9679984B2 (en) * 2012-11-07 2017-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate structure with multi-layer composition
US9312136B2 (en) 2014-03-06 2016-04-12 International Business Machines Corporation Replacement metal gate stack for diffusion prevention
US9449887B2 (en) 2014-12-08 2016-09-20 Globalfoundries Inc. Method of forming replacement gate PFET having TiALCO layer for improved NBTI performance
WO2016105402A1 (en) * 2014-12-23 2016-06-30 Intel Corporation Via blocking layer
CN110349915B (zh) * 2019-07-12 2021-07-30 中国科学院微电子研究所 一种半导体器件制备方法及制备得到的半导体器件
CN113025032B (zh) * 2021-03-09 2022-04-15 电子科技大学 一种高介电性能自愈合聚氨酯复合材料及其制备的方法和制动应用
US20230028460A1 (en) * 2021-07-23 2023-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors

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Also Published As

Publication number Publication date
JP2008530769A (ja) 2008-08-07
WO2006076086A3 (en) 2009-04-16
WO2006076086A2 (en) 2006-07-20
CN101443918B (zh) 2011-07-06
JP2012191220A (ja) 2012-10-04
EP1842240A2 (en) 2007-10-10
EP1842240A4 (en) 2009-10-14
JP5511889B2 (ja) 2014-06-04
ATE475195T1 (de) 2010-08-15
US20100015790A1 (en) 2010-01-21
EP1842240B1 (en) 2010-07-21
CN101443918A (zh) 2009-05-27
US7667277B2 (en) 2010-02-23
JP5241237B2 (ja) 2013-07-17
DE602005022493D1 (de) 2010-09-02
TW200629539A (en) 2006-08-16
US20060163630A1 (en) 2006-07-27
US8288237B2 (en) 2012-10-16

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