JP5238544B2 - 成膜方法及び発光装置の作製方法 - Google Patents
成膜方法及び発光装置の作製方法 Download PDFInfo
- Publication number
- JP5238544B2 JP5238544B2 JP2009037410A JP2009037410A JP5238544B2 JP 5238544 B2 JP5238544 B2 JP 5238544B2 JP 2009037410 A JP2009037410 A JP 2009037410A JP 2009037410 A JP2009037410 A JP 2009037410A JP 5238544 B2 JP5238544 B2 JP 5238544B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- light
- film
- organic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Biophysics (AREA)
- Electromagnetism (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009037410A JP5238544B2 (ja) | 2008-03-07 | 2009-02-20 | 成膜方法及び発光装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008057359 | 2008-03-07 | ||
| JP2008057356 | 2008-03-07 | ||
| JP2008057356 | 2008-03-07 | ||
| JP2008057359 | 2008-03-07 | ||
| JP2009037410A JP5238544B2 (ja) | 2008-03-07 | 2009-02-20 | 成膜方法及び発光装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009238740A JP2009238740A (ja) | 2009-10-15 |
| JP2009238740A5 JP2009238740A5 (https=) | 2012-01-19 |
| JP5238544B2 true JP5238544B2 (ja) | 2013-07-17 |
Family
ID=41053872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009037410A Expired - Fee Related JP5238544B2 (ja) | 2008-03-07 | 2009-02-20 | 成膜方法及び発光装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8840972B2 (https=) |
| JP (1) | JP5238544B2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834327A (en) | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
| JP5292263B2 (ja) * | 2008-12-05 | 2013-09-18 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光素子の作製方法 |
| JP2011248284A (ja) * | 2010-05-31 | 2011-12-08 | Sony Chemical & Information Device Corp | 偏光板及び偏光板の製造方法 |
| EP2731126A1 (en) | 2012-11-09 | 2014-05-14 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method for bonding bare chip dies |
| WO2015117927A1 (en) * | 2014-02-05 | 2015-08-13 | Solaronics S.A. | Method to dry or cure an organic coating on a glass plate |
| TWI757279B (zh) * | 2016-03-31 | 2022-03-11 | 美商伊雷克托科學工業股份有限公司 | 用於導電電鍍的雷射種晶之方法 |
| CA3043791A1 (en) * | 2016-11-23 | 2018-05-31 | Institut National De La Recherche Scientifique | Method and system of laser-driven impact acceleration |
Family Cites Families (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4970196A (en) * | 1987-01-15 | 1990-11-13 | The Johns Hopkins University | Method and apparatus for the thin film deposition of materials with a high power pulsed laser |
| US5171650A (en) * | 1990-10-04 | 1992-12-15 | Graphics Technology International, Inc. | Ablation-transfer imaging/recording |
| US4987006A (en) * | 1990-03-26 | 1991-01-22 | Amp Incorporated | Laser transfer deposition |
| US5380390B1 (en) * | 1991-06-10 | 1996-10-01 | Ultimate Abras Systems Inc | Patterned abrasive material and method |
| FR2717488B1 (fr) * | 1994-03-17 | 1996-06-14 | Inst Francais Du Petrole | Méthode de collage de particules minérales sur des supports. |
| JP3801730B2 (ja) | 1997-05-09 | 2006-07-26 | 株式会社半導体エネルギー研究所 | プラズマcvd装置及びそれを用いた薄膜形成方法 |
| US5937272A (en) | 1997-06-06 | 1999-08-10 | Eastman Kodak Company | Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate |
| US5851709A (en) | 1997-10-31 | 1998-12-22 | Eastman Kodak Company | Method for selective transfer of a color organic layer |
| US6165543A (en) | 1998-06-17 | 2000-12-26 | Nec Corporation | Method of making organic EL device and organic EL transfer base plate |
| US6177151B1 (en) * | 1999-01-27 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Matrix assisted pulsed laser evaporation direct write |
| JP3740557B2 (ja) | 1999-03-09 | 2006-02-01 | 独立行政法人産業技術総合研究所 | 有機薄膜作製方法および有機薄膜作製装置 |
| US7288420B1 (en) | 1999-06-04 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
| TWI232595B (en) | 1999-06-04 | 2005-05-11 | Semiconductor Energy Lab | Electroluminescence display device and electronic device |
| US8853696B1 (en) | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
| TW504941B (en) | 1999-07-23 | 2002-10-01 | Semiconductor Energy Lab | Method of fabricating an EL display device, and apparatus for forming a thin film |
| JP4590663B2 (ja) | 1999-10-29 | 2010-12-01 | セイコーエプソン株式会社 | カラーフィルタの製造方法 |
| TW490714B (en) | 1999-12-27 | 2002-06-11 | Semiconductor Energy Lab | Film formation apparatus and method for forming a film |
| US20020011205A1 (en) | 2000-05-02 | 2002-01-31 | Shunpei Yamazaki | Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device |
| TW501379B (en) | 2000-07-25 | 2002-09-01 | Eastman Kodak Co | Method of making organic electroluminescent device using laser transfer |
| DE60129461T2 (de) * | 2000-12-20 | 2007-12-20 | Yazaki Corp. | Vorrichtung und entsprechendes verfahren zur schnellvernetzung von sol-gel-beschichtungen |
| JP3969698B2 (ja) | 2001-05-21 | 2007-09-05 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP4230170B2 (ja) * | 2001-06-08 | 2009-02-25 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| US20020197393A1 (en) * | 2001-06-08 | 2002-12-26 | Hideaki Kuwabara | Process of manufacturing luminescent device |
| SG114589A1 (en) | 2001-12-12 | 2005-09-28 | Semiconductor Energy Lab | Film formation apparatus and film formation method and cleaning method |
| US6695029B2 (en) | 2001-12-12 | 2004-02-24 | Eastman Kodak Company | Apparatus for permitting transfer of organic material from a donor to form a layer in an OLED device |
| US6555284B1 (en) | 2001-12-27 | 2003-04-29 | Eastman Kodak Company | In situ vacuum method for making OLED devices |
| US6610455B1 (en) | 2002-01-30 | 2003-08-26 | Eastman Kodak Company | Making electroluminscent display devices |
| US6703179B2 (en) | 2002-03-13 | 2004-03-09 | Eastman Kodak Company | Transfer of organic material from a donor to form a layer in an OLED device |
| US6566032B1 (en) | 2002-05-08 | 2003-05-20 | Eastman Kodak Company | In-situ method for making OLED devices that are moisture or oxygen-sensitive |
| JP2004071554A (ja) | 2002-07-25 | 2004-03-04 | Sanyo Electric Co Ltd | 有機elパネルおよびその製造方法 |
| US6890627B2 (en) * | 2002-08-02 | 2005-05-10 | Eastman Kodak Company | Laser thermal transfer from a donor element containing a hole-transporting layer |
| US6811938B2 (en) | 2002-08-29 | 2004-11-02 | Eastman Kodak Company | Using fiducial marks on a substrate for laser transfer of organic material from a donor to a substrate |
| JP2004103406A (ja) | 2002-09-10 | 2004-04-02 | Sony Corp | 薄膜パターン形成方法および装置並びに有機el表示装置の製造方法 |
| JP4627961B2 (ja) | 2002-09-20 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US20040191564A1 (en) | 2002-12-17 | 2004-09-30 | Samsung Sdi Co., Ltd. | Donor film for low molecular weight full color organic electroluminescent device using laser induced thermal imaging method and method for fabricating low molecular weight full color organic electroluminescent device using the film |
| TW579537B (en) | 2003-01-03 | 2004-03-11 | Ind Tech Res Inst | Apparatus for image display forming with projection and apparatus and methods for image forming on conductive substrates |
| US20040206307A1 (en) | 2003-04-16 | 2004-10-21 | Eastman Kodak Company | Method and system having at least one thermal transfer station for making OLED displays |
| JP4493926B2 (ja) | 2003-04-25 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 製造装置 |
| US20050145326A1 (en) | 2004-01-05 | 2005-07-07 | Eastman Kodak Company | Method of making an OLED device |
| KR100708644B1 (ko) | 2004-02-26 | 2007-04-17 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이를 구비한 평판 표시장치, 박막트랜지스터의 제조방법, 평판 표시장치의 제조방법, 및도너 시트의 제조방법 |
| JP2006113568A (ja) | 2004-09-17 | 2006-04-27 | Semiconductor Energy Lab Co Ltd | 表示装置、及び表示装置の作製方法 |
| JP2006086069A (ja) | 2004-09-17 | 2006-03-30 | Three M Innovative Properties Co | 有機エレクトロルミネッセンス素子及びその製造方法 |
| JP2006202510A (ja) | 2005-01-18 | 2006-08-03 | Seiko Epson Corp | 有機el装置の製造方法 |
| JP2006228649A (ja) | 2005-02-21 | 2006-08-31 | Seiko Epson Corp | 有機el装置の製造方法、蒸着ボート |
| JP2006244944A (ja) | 2005-03-07 | 2006-09-14 | Seiko Epson Corp | 有機el装置の製造方法、蒸着ボート |
| JP2006309995A (ja) | 2005-04-27 | 2006-11-09 | Sony Corp | 転写用基板および表示装置の製造方法ならびに表示装置 |
| TWI307612B (en) | 2005-04-27 | 2009-03-11 | Sony Corp | Transfer method and transfer apparatus |
| DE602006004913D1 (de) | 2005-04-28 | 2009-03-12 | Semiconductor Energy Lab | Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung |
| WO2007015465A1 (ja) | 2005-08-01 | 2007-02-08 | Pioneer Corporation | 有機膜被熱転写体製造方法、有機膜被熱転写体 |
| JP2007311093A (ja) | 2006-05-17 | 2007-11-29 | Sony Corp | 平面型表示装置、並びに、スペーサ |
| US7994021B2 (en) * | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| TWI412079B (zh) | 2006-07-28 | 2013-10-11 | 半導體能源研究所股份有限公司 | 製造顯示裝置的方法 |
| JP5314857B2 (ja) * | 2006-07-28 | 2013-10-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI427702B (zh) | 2006-07-28 | 2014-02-21 | 半導體能源研究所股份有限公司 | 顯示裝置的製造方法 |
| KR101346246B1 (ko) | 2006-08-24 | 2013-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 제작방법 |
| US8563431B2 (en) | 2006-08-25 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8148259B2 (en) | 2006-08-30 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2008069259A1 (en) | 2006-12-05 | 2008-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device |
| KR101457653B1 (ko) | 2007-03-22 | 2014-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 성막장치, 제조장치, 성막방법, 및 발광장치의 제조방법 |
| TWI477195B (zh) | 2007-04-27 | 2015-03-11 | Semiconductor Energy Lab | 發光裝置的製造方法 |
| US8367152B2 (en) | 2007-04-27 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light-emitting device |
| US8119204B2 (en) | 2007-04-27 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Film formation method and method for manufacturing light-emitting device |
| KR101563237B1 (ko) | 2007-06-01 | 2015-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 제조장치 및 발광장치 제작방법 |
| JP5325471B2 (ja) | 2007-07-06 | 2013-10-23 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| WO2009099002A1 (en) | 2008-02-04 | 2009-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and method for manufacturing light-emitting device |
| JP5416987B2 (ja) | 2008-02-29 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
| US8182863B2 (en) | 2008-03-17 | 2012-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and manufacturing method of light-emitting device |
-
2009
- 2009-02-20 JP JP2009037410A patent/JP5238544B2/ja not_active Expired - Fee Related
- 2009-03-03 US US12/396,636 patent/US8840972B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20090226637A1 (en) | 2009-09-10 |
| JP2009238740A (ja) | 2009-10-15 |
| US8840972B2 (en) | 2014-09-23 |
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