JP5233975B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5233975B2
JP5233975B2 JP2009277902A JP2009277902A JP5233975B2 JP 5233975 B2 JP5233975 B2 JP 5233975B2 JP 2009277902 A JP2009277902 A JP 2009277902A JP 2009277902 A JP2009277902 A JP 2009277902A JP 5233975 B2 JP5233975 B2 JP 5233975B2
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film
gas
fluorine
sicn
added carbon
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JP2010056579A5 (enExample
JP2010056579A (ja
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保男 小林
賢一 西澤
隆季 亀嶋
孝明 松岡
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Tokyo Electron Ltd
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    • H10P14/683—
    • H10P50/73—
    • H10W20/071—
    • H10W20/075—
    • H10W20/087—
    • H10P14/6336—
    • H10P14/6905—
    • H10P14/6922—

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2009277902A 2004-01-13 2009-12-07 半導体装置の製造方法 Expired - Fee Related JP5233975B2 (ja)

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JP2009277902A JP5233975B2 (ja) 2004-01-13 2009-12-07 半導体装置の製造方法

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JP2004005738 2004-01-13
JP2004005738 2004-01-13
JP2004290846 2004-10-01
JP2004290846 2004-10-01
JP2009277902A JP5233975B2 (ja) 2004-01-13 2009-12-07 半導体装置の製造方法

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JP2005006206A Division JP4715207B2 (ja) 2004-01-13 2005-01-13 半導体装置の製造方法及び成膜システム

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JP2010056579A JP2010056579A (ja) 2010-03-11
JP2010056579A5 JP2010056579A5 (enExample) 2011-02-03
JP5233975B2 true JP5233975B2 (ja) 2013-07-10

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JP (1) JP5233975B2 (enExample)
KR (1) KR100743745B1 (enExample)
WO (1) WO2005069367A1 (enExample)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6967405B1 (en) 2003-09-24 2005-11-22 Yongsik Yu Film for copper diffusion barrier
US7282438B1 (en) 2004-06-15 2007-10-16 Novellus Systems, Inc. Low-k SiC copper diffusion barrier films
US7214600B2 (en) * 2004-06-25 2007-05-08 Applied Materials, Inc. Method to improve transmittance of an encapsulating film
TWI450379B (zh) * 2005-06-20 2014-08-21 國立大學法人 東北大學 層間絕緣膜及配線構造與此等之製造方法
US8664124B2 (en) 2005-10-31 2014-03-04 Novellus Systems, Inc. Method for etching organic hardmasks
US8110493B1 (en) 2005-12-23 2012-02-07 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
DE102006012661A1 (de) * 2006-03-20 2007-09-27 Mtu Aero Engines Gmbh Verfahren zum Verbinden von metallischen Bauelementen und damit hergestelltes Bauteil
JP5119606B2 (ja) * 2006-03-31 2013-01-16 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
US7851351B2 (en) 2006-03-31 2010-12-14 Tokyo Electron Limited Manufacturing method for semiconductor devices with enhanced adhesivity and barrier properties
US7981810B1 (en) 2006-06-08 2011-07-19 Novellus Systems, Inc. Methods of depositing highly selective transparent ashable hardmask films
JP5138291B2 (ja) * 2006-07-05 2013-02-06 東京エレクトロン株式会社 アモルファスカーボン膜の後処理方法およびそれを用いた半導体装置の製造方法
JP4626600B2 (ja) * 2006-09-29 2011-02-09 Ｔｄｋ株式会社 磁気記録媒体の製造方法
WO2008056748A1 (fr) * 2006-11-09 2008-05-15 National University Corporation Tohoku University Pellicule isolante intercouche, structure de circuit, dispositif électronique et procédé de fabrication de la pellicule isolante intercouche, de la structure de circuit et du dispositif électronique
US20080173985A1 (en) * 2007-01-24 2008-07-24 International Business Machines Corporation Dielectric cap having material with optical band gap to substantially block uv radiation during curing treatment, and related methods
US7981777B1 (en) 2007-02-22 2011-07-19 Novellus Systems, Inc. Methods of depositing stable and hermetic ashable hardmask films
US7915166B1 (en) * 2007-02-22 2011-03-29 Novellus Systems, Inc. Diffusion barrier and etch stop films
US8173537B1 (en) 2007-03-29 2012-05-08 Novellus Systems, Inc. Methods for reducing UV and dielectric diffusion barrier interaction
JP5261964B2 (ja) * 2007-04-10 2013-08-14 東京エレクトロン株式会社 半導体装置の製造方法
US8021975B2 (en) 2007-07-24 2011-09-20 Tokyo Electron Limited Plasma processing method for forming a film and an electronic component manufactured by the method
US8962101B2 (en) 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
JP5424551B2 (ja) * 2007-11-07 2014-02-26 ローム株式会社 半導体装置
WO2009101474A2 (en) * 2007-11-27 2009-08-20 Tokyo Electron Limited Semiconductor device and method for manufacturing the same
US7732324B2 (en) * 2007-12-20 2010-06-08 Texas Instruments Incorporated Semiconductor device having improved adhesion and reduced blistering between etch stop layer and dielectric layer
US8124522B1 (en) 2008-04-11 2012-02-28 Novellus Systems, Inc. Reducing UV and dielectric diffusion barrier interaction through the modulation of optical properties
US7820556B2 (en) * 2008-06-04 2010-10-26 Novellus Systems, Inc. Method for purifying acetylene gas for use in semiconductor processes
US8435608B1 (en) 2008-06-27 2013-05-07 Novellus Systems, Inc. Methods of depositing smooth and conformal ashable hard mask films
WO2010038888A1 (ja) * 2008-09-30 2010-04-08 東京エレクトロン株式会社 窒化酸化珪素膜およびその形成方法、コンピュータ読み取り可能な記憶媒体並びにプラズマｃｖｄ装置
US7955990B2 (en) * 2008-12-12 2011-06-07 Novellus Systems, Inc. Method for improved thickness repeatability of PECVD deposited carbon films
US8247332B2 (en) 2009-12-04 2012-08-21 Novellus Systems, Inc. Hardmask materials
US8563414B1 (en) 2010-04-23 2013-10-22 Novellus Systems, Inc. Methods for forming conductive carbon films by PECVD
US20110272707A1 (en) * 2010-05-06 2011-11-10 Qs Semiconductor Australia Pty Ltd Substrates and methods of forming film structures to facilitate silicon carbide epitaxy
JP5781803B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 温度制御方法及びプラズマ処理システム
US8461683B2 (en) * 2011-04-01 2013-06-11 Intel Corporation Self-forming, self-aligned barriers for back-end interconnects and methods of making same
JP5772508B2 (ja) * 2011-10-27 2015-09-02 東京エレクトロン株式会社 成膜装置及びその運用方法
WO2013095396A1 (en) 2011-12-20 2013-06-27 Intel Corporation Conformal low temperature hermetic dielectric diffusion barriers
WO2013125647A1 (ja) * 2012-02-22 2013-08-29 東京エレクトロン株式会社 半導体装置の製造方法及び半導体装置
SG195494A1 (en) 2012-05-18 2013-12-30 Novellus Systems Inc Carbon deposition-etch-ash gap fill process
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US10211310B2 (en) 2012-06-12 2019-02-19 Novellus Systems, Inc. Remote plasma based deposition of SiOC class of films
US8742587B1 (en) * 2012-11-18 2014-06-03 United Microelectronics Corp. Metal interconnection structure
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
US9337068B2 (en) 2012-12-18 2016-05-10 Lam Research Corporation Oxygen-containing ceramic hard masks and associated wet-cleans
US9304396B2 (en) 2013-02-25 2016-04-05 Lam Research Corporation PECVD films for EUV lithography
US10297442B2 (en) 2013-05-31 2019-05-21 Lam Research Corporation Remote plasma based deposition of graded or multi-layered silicon carbide film
US9320387B2 (en) 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
US9589799B2 (en) 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
EP3809451B1 (en) 2013-11-08 2025-04-09 Renesas Electronics Corporation Semiconductor device
KR20150116600A (ko) * 2014-04-08 2015-10-16 삼성전자주식회사 에피텍시얼막 형성 방법 및 이를 수행하는데 사용되는 기판 처리 장치
US9548188B2 (en) * 2014-07-30 2017-01-17 Lam Research Corporation Method of conditioning vacuum chamber of semiconductor substrate processing apparatus
KR102019573B1 (ko) * 2014-10-30 2019-09-06 도쿄엘렉트론가부시키가이샤 기판 적재대
WO2016111832A1 (en) * 2015-01-09 2016-07-14 Applied Materials, Inc. Laminate and core shell formation of silicide nanowire
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
KR102616489B1 (ko) 2016-10-11 2023-12-20 삼성전자주식회사 반도체 장치 제조 방법
US10002787B2 (en) 2016-11-23 2018-06-19 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication
US9837270B1 (en) 2016-12-16 2017-12-05 Lam Research Corporation Densification of silicon carbide film using remote plasma treatment
US10707165B2 (en) * 2017-04-20 2020-07-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having an extra low-k dielectric layer and method of forming the same
KR102515391B1 (ko) * 2018-08-29 2023-03-31 주식회사 원익아이피에스 반도체 소자의 제조방법
WO2020163115A1 (en) * 2019-02-07 2020-08-13 Lam Research Corporation Substrate processing tool capable of modulating one or more plasma temporally and/or spatially
WO2020243342A1 (en) 2019-05-29 2020-12-03 Lam Research Corporation High selectivity, low stress, and low hydrogen diamond-like carbon hardmasks by high power pulsed low frequency rf
KR102888630B1 (ko) 2019-08-30 2025-11-19 램 리써치 코포레이션 저압에서의 고밀도, 고모듈러스, 및 고경도 비정질 탄소 막들
CN121039784A (zh) * 2023-04-11 2025-11-28 应用材料公司 有机流出物减量的方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2748879B2 (ja) 1995-02-23 1998-05-13 日本電気株式会社 フッ素化非晶質炭素膜材料の製造方法
CA2157257C (en) * 1994-09-12 1999-08-10 Kazuhiko Endo Semiconductor device with amorphous carbon layer and method of fabricating the same
JP3666106B2 (ja) * 1996-02-29 2005-06-29 ソニー株式会社 半導体装置の製造方法
JP3323764B2 (ja) 1996-11-14 2002-09-09 東京エレクトロン株式会社 処理方法
US6149730A (en) * 1997-10-08 2000-11-21 Nec Corporation Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
JP3116904B2 (ja) * 1997-10-08 2000-12-11 日本電気株式会社 半導体装置の成膜処理装置、半導体装置の製造方法及び半導体の薄膜形成方法
JP2000068261A (ja) * 1998-08-19 2000-03-03 Toshiba Corp 半導体装置の製造方法
JP4361625B2 (ja) * 1998-10-05 2009-11-11 東京エレクトロン株式会社 半導体装置及びその製造方法
JP2000223485A (ja) * 1999-01-28 2000-08-11 Nec Corp 複合絶縁膜の製造方法及びこれを用いた半導体装置の製造方法
DE60037395T2 (de) * 1999-03-09 2008-11-27 Tokyo Electron Ltd. Herstellung eines halbleiter-bauelementes
US6875687B1 (en) * 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
US6440878B1 (en) * 2000-04-03 2002-08-27 Sharp Laboratories Of America, Inc. Method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer
JP4484345B2 (ja) * 2000-09-11 2010-06-16 東京エレクトロン株式会社 半導体装置及びその製造方法
JP2002222860A (ja) * 2001-01-29 2002-08-09 Sony Corp 半導体装置の作成方法
US6879046B2 (en) * 2001-06-28 2005-04-12 Agere Systems Inc. Split barrier layer including nitrogen-containing portion and oxygen-containing portion
JP4152619B2 (ja) * 2001-11-14 2008-09-17 株式会社ルネサステクノロジ 半導体装置およびその製造方法
JP3768480B2 (ja) * 2002-02-14 2006-04-19 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
KR100471164B1 (ko) * 2002-03-26 2005-03-09 삼성전자주식회사 금속-절연체-금속 캐패시터를 갖는 반도체장치 및 그제조방법
JP2004079901A (ja) * 2002-08-21 2004-03-11 Nec Electronics Corp 半導体装置及びその製造方法
US7199046B2 (en) * 2003-11-14 2007-04-03 Tokyo Electron Ltd. Structure comprising tunable anti-reflective coating and method of forming thereof

Also Published As

Publication number Publication date
KR100743745B1 (ko) 2007-07-27
KR20060127109A (ko) 2006-12-11
JP2010056579A (ja) 2010-03-11
WO2005069367A1 (ja) 2005-07-28
US20080254641A1 (en) 2008-10-16
US7803705B2 (en) 2010-09-28

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