JP5219051B2 - 流動層反応器を用いた多結晶シリコンの連続形成方法 - Google Patents

流動層反応器を用いた多結晶シリコンの連続形成方法 Download PDF

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JP5219051B2
JP5219051B2 JP2009510899A JP2009510899A JP5219051B2 JP 5219051 B2 JP5219051 B2 JP 5219051B2 JP 2009510899 A JP2009510899 A JP 2009510899A JP 2009510899 A JP2009510899 A JP 2009510899A JP 5219051 B2 JP5219051 B2 JP 5219051B2
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silicon
gas
reaction
fluidized bed
particles
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JP2009536915A5 (enExample
JP2009536915A (ja
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ヘ ヨン キム，
キュン コ ヨン，
ヨン キ パク，
ウォン チュン チョイ，
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Korea Research Institute of Chemical Technology KRICT
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1809—Controlling processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1818—Feeding of the fluidising gas
    • B01J8/1827—Feeding of the fluidising gas the fluidising gas being a reactant
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1836—Heating and cooling the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
    • B01J8/34—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with stationary packing material in the fluidised bed, e.g. bricks, wire rings, baffles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00389—Controlling the temperature using electric heating or cooling elements
    • B01J2208/00398—Controlling the temperature using electric heating or cooling elements inside the reactor bed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00389—Controlling the temperature using electric heating or cooling elements
    • B01J2208/00407—Controlling the temperature using electric heating or cooling elements outside the reactor bed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00389—Controlling the temperature using electric heating or cooling elements
    • B01J2208/00415—Controlling the temperature using electric heating or cooling elements electric resistance heaters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00477—Controlling the temperature by thermal insulation means
    • B01J2208/00495—Controlling the temperature by thermal insulation means using insulating materials or refractories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00539—Pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00796—Details of the reactor or of the particulate material
    • B01J2208/00823—Mixing elements
    • B01J2208/00831—Stationary elements
    • B01J2208/0084—Stationary elements inside the bed, e.g. baffles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00796—Details of the reactor or of the particulate material
    • B01J2208/00991—Disengagement zone in fluidised-bed reactors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0209—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components of glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0218—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components of ceramic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0236—Metal based
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0254—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0272—Graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0277—Metal based
    • B01J2219/029—Non-ferrous metals

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Combustion & Propulsion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
JP2009510899A 2006-06-15 2007-06-14 流動層反応器を用いた多結晶シリコンの連続形成方法 Expired - Fee Related JP5219051B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2006-0053826 2006-06-15
KR1020060053826A KR100813131B1 (ko) 2006-06-15 2006-06-15 유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법
PCT/KR2007/002880 WO2007145474A1 (en) 2006-06-15 2007-06-14 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor

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JP2009536915A JP2009536915A (ja) 2009-10-22
JP2009536915A5 JP2009536915A5 (enExample) 2009-12-17
JP5219051B2 true JP5219051B2 (ja) 2013-06-26

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US (2) US8017024B2 (enExample)
EP (1) EP2032746B1 (enExample)
JP (1) JP5219051B2 (enExample)
KR (1) KR100813131B1 (enExample)
CN (1) CN101400835B (enExample)
CA (1) CA2654896C (enExample)
EA (1) EA015219B1 (enExample)
ES (1) ES2470540T3 (enExample)
WO (1) WO2007145474A1 (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100783667B1 (ko) * 2006-08-10 2007-12-07 한국화학연구원 입자형 다결정 실리콘의 제조방법 및 제조장치
EP2055375B1 (en) * 2007-10-25 2012-05-02 Mitsubishi Materials Corporation Hydrogen chloride gaz ejecting nozzle, reaction apparatus for producing thrichlorosilane and method for producing trichlorosilane
KR101477817B1 (ko) * 2008-01-25 2014-12-30 미쓰비시 마테리알 가부시키가이샤 반응로 세정 장치
SG192438A1 (en) * 2008-06-30 2013-08-30 Memc Electronic Materials Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls
CN101676203B (zh) * 2008-09-16 2015-06-10 储晞 生产高纯颗粒硅的方法
US7927984B2 (en) 2008-11-05 2011-04-19 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition
MY161193A (en) 2009-11-18 2017-04-14 Rec Silicon Inc Fluid bed reactor
JP5180947B2 (ja) * 2009-12-09 2013-04-10 コスモ石油株式会社 多結晶シリコン製造用の反応炉の洗浄方法
KR20120110109A (ko) * 2009-12-29 2012-10-09 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 주변 실리콘 테트라염화물을 이용하여 반응기 벽 상의 실리콘의 퇴적을 감소시키는 방법
JP5633375B2 (ja) * 2010-01-27 2014-12-03 三菱マテリアル株式会社 トリクロロシラン製造装置
JP5637013B2 (ja) 2010-03-04 2014-12-10 三菱マテリアル株式会社 トリクロロシラン製造装置及び製造方法
KR101329030B1 (ko) 2010-10-01 2013-11-13 주식회사 실리콘밸류 유동층 반응기
US8449848B2 (en) 2010-10-22 2013-05-28 Memc Electronic Materials, Inc. Production of polycrystalline silicon in substantially closed-loop systems
US20120100061A1 (en) 2010-10-22 2012-04-26 Memc Electronic Materials, Inc. Production of Polycrystalline Silicon in Substantially Closed-loop Processes
US20120100059A1 (en) 2010-10-22 2012-04-26 Memc Electronic Materials, Inc. Production of Polycrystalline Silicon By The Thermal Decomposition of Trichlorosilane In A Fluidized Bed Reactor
US9156705B2 (en) 2010-12-23 2015-10-13 Sunedison, Inc. Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor
US8452547B2 (en) * 2010-12-29 2013-05-28 Memc Electronic Materials, Inc. Systems and methods for particle size determination and control in a fluidized bed reactor
US8849584B2 (en) * 2010-12-29 2014-09-30 Sunedison, Inc. Systems and methods for particle size determination and control in a fluidized bed reactor for use with thermally decomposable silicon-containing gas
US20120183686A1 (en) * 2011-01-19 2012-07-19 Rec Silicon Inc. Reactor system and method of polycrystalline silicon production therewith
JP5645718B2 (ja) * 2011-03-07 2014-12-24 東京エレクトロン株式会社 熱処理装置
KR101329035B1 (ko) 2011-04-20 2013-11-13 주식회사 실리콘밸류 유동층 반응기
KR101356391B1 (ko) * 2011-04-20 2014-02-03 주식회사 실리콘밸류 다결정 실리콘 제조장치
US20130129570A1 (en) * 2011-04-20 2013-05-23 Siliconvalue Llc. Polycrystal silicon manufacturing apparatus
KR101329032B1 (ko) * 2011-04-20 2013-11-14 주식회사 실리콘밸류 다결정 실리콘 제조장치 및 이를 이용한 다결정 실리콘의 제조방법
KR101882330B1 (ko) * 2011-06-21 2018-07-27 엘지이노텍 주식회사 증착 장치
US9114997B2 (en) 2011-09-30 2015-08-25 Sunedison, Inc. Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor
KR102050114B1 (ko) 2011-09-30 2019-11-28 코너 스타 리미티드 유동층 반응기에서의 실란의 열 분해에 의한 다결정 실리콘의 제조
US8871153B2 (en) * 2012-05-25 2014-10-28 Rokstar Technologies Llc Mechanically fluidized silicon deposition systems and methods
TWI613231B (zh) * 2012-07-17 2018-02-01 陝西有色天宏瑞科矽材料有限責任公司 用於製造多晶矽之反應器系統及方法
CA2881640A1 (en) * 2012-08-29 2014-03-06 Hemlock Semiconductor Corporation Tapered fluidized bed reactor and process for its use
DE102012218747A1 (de) * 2012-10-15 2014-04-17 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
US9212421B2 (en) 2013-07-10 2015-12-15 Rec Silicon Inc Method and apparatus to reduce contamination of particles in a fluidized bed reactor
US9587993B2 (en) 2012-11-06 2017-03-07 Rec Silicon Inc Probe assembly for a fluid bed reactor
DE102013209076A1 (de) * 2013-05-16 2014-11-20 Wacker Chemie Ag Reaktor zur Herstellung von polykristallinem Silicium und Verfahren zur Entfernung eines Silicium enthaltenden Belags auf einem Bauteil eines solchen Reaktors
DE102013212406A1 (de) * 2013-06-27 2014-12-31 Wacker Chemie Ag Verfahren zum Betreiben eines Wirbelschichtreaktors
US9555474B2 (en) * 2013-08-12 2017-01-31 United Technologies Corporation High temperature fluidized bed for powder treatment
DE102014205025A1 (de) 2014-03-18 2015-09-24 Wacker Chemie Ag Reaktor und Verfahren zur Herstellung von granularem Polysilicium
CN104947187B (zh) * 2014-03-31 2018-03-23 新特能源股份有限公司 一种硅片母合金的制备方法
DE102014212049A1 (de) * 2014-06-24 2015-12-24 Wacker Chemie Ag Wirbelschichtreaktor und Verfahren zur Herstellung von polykristallinem Siliciumgranulat
US9662628B2 (en) 2014-08-15 2017-05-30 Rec Silicon Inc Non-contaminating bonding material for segmented silicon carbide liner in a fluidized bed reactor
US9238211B1 (en) 2014-08-15 2016-01-19 Rec Silicon Inc Segmented silicon carbide liner
US9446367B2 (en) 2014-08-15 2016-09-20 Rec Silicon Inc Joint design for segmented silicon carbide liner in a fluidized bed reactor
DE102014217179A1 (de) * 2014-08-28 2016-03-03 Wacker Chemie Ag Kunststoffsubstrate mit Siliciumbeschichtung
DE102014222865A1 (de) * 2014-11-10 2016-05-12 Wacker Chemie Ag Wirbelschichtreaktor zur Herstellung von polykristallinem Siliciumgranulat und Verfahren zur Montage eines solchen Wirbelschichtreaktors
DE102015224120A1 (de) * 2015-12-02 2017-06-08 Wacker Chemie Ag Wirbelschichtreaktor und Verfahren zur Herstellung von polykristallinem Siliciumgranulat
DE102015224099A1 (de) 2015-12-02 2017-06-08 Wacker Chemie Ag Wirbelschichtreaktor und Verfahren zur Herstellung von polykristallinem Siliciumgranulat
DE102016202991A1 (de) * 2016-02-25 2017-08-31 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von polykristallinem Siliciumgranulat
KR102096577B1 (ko) 2016-12-29 2020-04-02 한화솔루션 주식회사 폴리실리콘 제조 장치
KR102175817B1 (ko) * 2017-09-12 2020-11-06 주식회사 엘지화학 결정화기
DE102017125221A1 (de) 2017-10-27 2019-05-02 Nexwafe Gmbh Verfahren und Vorrichtung zur Entfernung von Verunreinigungen aus Chlorsilanen
TWI701078B (zh) * 2018-10-01 2020-08-11 德商瓦克化學公司 用於生產顆粒多晶矽的流化床反應器
US10717061B1 (en) * 2019-06-26 2020-07-21 X Energy, Llc Fluidized bed reactor system allowing particle sampling during an ongoing reaction
CN117548414A (zh) * 2022-08-03 2024-02-13 江苏中能硅业科技发展有限公司 一种清洁流化床内壁结硅的方法
CN115142127B (zh) * 2022-08-29 2022-11-18 一道新能源科技(泰州)有限公司 一种基于lpcvd的多晶硅成型炉
CN117105230A (zh) * 2023-08-25 2023-11-24 乐山协鑫新能源科技有限公司 一种生产粒状多晶硅的方法及装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57135708A (en) 1981-02-12 1982-08-21 Shin Etsu Chem Co Ltd Manufacturing of high purity silicon granule
KR880000618B1 (ko) * 1985-12-28 1988-04-18 재단법인 한국화학연구소 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조 방법
US5139762A (en) * 1987-12-14 1992-08-18 Advanced Silicon Materials, Inc. Fluidized bed for production of polycrystalline silicon
JPH02279513A (ja) * 1989-04-20 1990-11-15 Osaka Titanium Co Ltd 高純度多結晶シリコンの製造方法
GB2271518B (en) * 1992-10-16 1996-09-25 Korea Res Inst Chem Tech Heating of fluidized bed reactor by microwave
US5491967A (en) * 1994-02-23 1996-02-20 Foster Wheeler Energia Oy Pressurized fluidized bed reactor and a method of operating the same
US5810934A (en) 1995-06-07 1998-09-22 Advanced Silicon Materials, Inc. Silicon deposition reactor apparatus
DE19735378A1 (de) * 1997-08-14 1999-02-18 Wacker Chemie Gmbh Verfahren zur Herstellung von hochreinem Siliciumgranulat
US6827786B2 (en) * 2000-12-26 2004-12-07 Stephen M Lord Machine for production of granular silicon
KR100411180B1 (ko) * 2001-01-03 2003-12-18 한국화학연구원 다결정실리콘의 제조방법과 그 장치
EP1661857B1 (en) * 2003-08-13 2016-12-21 Tokuyama Corporation Tubular reaction vessel and process for producing silicon therewith
WO2006019110A1 (ja) * 2004-08-19 2006-02-23 Tokuyama Corporation クロロシラン類の反応装置

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US8017024B2 (en) 2011-09-13
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CA2654896A1 (en) 2007-12-21
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US20100044342A1 (en) 2010-02-25
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CN101400835A (zh) 2009-04-01
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