JP2009536915A - 流動層反応器を用いた多結晶シリコンの連続形成方法 - Google Patents
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Abstract
Description
(i)前記反応領域を取り囲む反応管の内壁面にシリコン析出物が堆積される間、前記反応ガスと接触した、前記シリコン粒子の表面にシリコン析出が生じるように、前記反応ガス供給手段により前記反応ガスを供給する、シリコン粒子の形成工程と、
(ii)前記反応ガスを供給することなく、前記シリコン粒子の層の高さが、前記出口の高さを超過しないように、前記反応管内部に残留するシリコン粒子の一部を前記流動層反応器の外部に排出する、シリコン粒子の部分排出工程と、
(iii)前記シリコン析出物と反応して気相のシリコン化合物を生成するエッチングガスを前記反応領域に供給することでシリコン析出物を除去する、シリコン析出物の除去工程と
を有する多結晶シリコンの形成方法を提供する。
前記反応領域に形成されるシリコン粒子の層が流動状態となるように、流動ガス供給手段を利用して、前記加熱領域の前記シリコン粒子の層に流動ガスを供給するサブ工程と、前記反応管の内部領域及び/または外部領域に設置された加熱手段により、前記シリコン粒子を加熱するサブ工程と、
粒子排出手段により、前記内部領域で形成された前記シリコン粒子の一部を前記流動層反応器の外部に排出するサブ工程と、
前記シリコン粒子の層を通過する流動ガス、未反応ガス、副生成物ガスを含む排ガスを、ガス排出手段により、前記流動層反応器の外部に排出する、サブ工程と、を有する、。
さらに、この技術分野における、このような同等の実施形態にかかるこれらの技術は、クレームに付随するこの発明の特質や範囲から外れるものではないと認められる。
2 反応管
3 シリコン粒子
3a シリコン微結晶
3b シリコン生成物の粒子
4 内部領域
5 外部領域
6 断熱材
7 ライナー
8 加熱器
9 電気エネルギー供給手段
10 流動ガス
11r 反応ガス
11e エッチングガス
12 不活性ガス
13r 析出反応排ガス
13e エッチング反応排ガス
14 流動ガス供給手段
15r 反応ガス供給手段
15e エッチングガス供給手段
16 粒子排出手段
17 ガス排出手段
18 シリコン微結晶供給手段
19 ガス分散手段
22 充填物
24,25 内部領域接続手段
26 不活性ガス接続手段
28 外部領域接続手段
34 排ガス処理手段
41 シーリング材
D シリコン析出物
E 電力供給源
Rd シリコン析出反応
Re エッチング反応
Zh 加熱領域
Zr 反応領域
Claims (19)
- 反応管内部で形成されるシリコン粒子の層が、流動する状態でいる間にシリコン析出が起きるように、シリコン含有反応ガスを供給する反応ガス供給手段の反応ガスの出口が前記シリコン粒子の層内部に位置し、前記出口の端を高さの基準として、前記反応間内部の上側と下側が、前記反応ガスによるシリコン析出のための反応領域と、前記シリコン粒子の加熱のための加熱領域に、各々区分される、粒状の多結晶シリコンを形成するための、流動層反応器を用いて、
(i)前記反応領域を取り囲む反応管の内壁面にシリコン析出物が堆積される間、前記反応ガスと接触した、前記シリコン粒子の表面にシリコン析出が生じるように、前記反応ガス供給手段により前記反応ガスを供給する、シリコン粒子の形成工程と、
(ii)前記反応ガスを供給することなく、前記シリコン粒子の層の高さが、前記出口の高さを超過しないように、前記反応管内部に残留するシリコン粒子の一部を前記流動層反応器の外部に排出する、シリコン粒子の部分排出工程と、
(iii)前記シリコン析出物と反応して気相のシリコン化合物を生成するエッチングガスを前記反応領域に供給することでシリコン析出物を除去する、シリコン析出物の除去工程と
を有する、
多結晶シリコンの形成方法。 - (iv)前記シリコン析出物を除去し、前記エッチングガスの供給を停止した後、前記反応領域にシリコン粒子の層を形成させるために、前記反応管内部にシリコン粒子を補充する、シリコン粒子の補充工程を更に有する、
請求項1に記載の、流動層反応器を用いる多結晶シリコンの形成方法。 - 前記(i)、(ii)、(iii)及び(iv)工程を有するサイクルを繰り返す、
請求項1および2に記載の流動層反応器を用いる多結晶シリコンの形成方法。 - 前記流動層反応器は、前記反応管を取り囲む反応器シェルを有し、前記反応管の内部空間は、前記シリコン粒子の層が存在し、前記加熱領域と前記反応領域を含む内部領域とし、前記反応管と前記反応器シェルとの間の空間は、前記シリコン粒子の層が存在せず、前記析出反応が起きない外部領域とする、
請求項1に記載の、流動層反応器を用いる多結晶シリコンの形成方法。 - (i)シリコン粒子の形成工程が、
前記反応領域に形成されるシリコン粒子の層が流動状態となるように、流動ガス供給手段を利用して、前記加熱領域の前記シリコン粒子の層に流動ガスを供給するサブ工程と、
前記反応管の内部領域及び/または外部領域に設置された加熱手段により、前記シリコン粒子を加熱するサブ工程と、
粒子排出手段により、前記内部領域で形成された前記シリコン粒子の一部を前記流動層反応器の外部に排出するサブ工程と、
前記シリコン粒子の層を通過する流動ガス、未反応ガス、副生成物ガスを含む排ガスを、ガス排出手段により、前記流動層反応器の外部に排出する、サブ工程と、
を有する、
請求項1〜4のうちいずれかに記載の、流動層反応器を用いる多結晶シリコンの形成方法。 - 前記外部領域を不活性ガス雰囲気に維持するため、前記外部領域に、窒素、アルゴン、及びヘリウムから選択された少なくとも一種を有する不活性ガスを供給する、
請求項4に記載の、流動層反応器を用いる多結晶シリコンの形成方法。 - 前記外部領域の圧力(Po)と前記内部領域の圧力(Pi)の差を、0バール≦|Po−Pi|≦1バールの条件を満足するように維持する、
請求項4に記載の、流動層反応器を用いる多結晶シリコンの形成方法。 - 前記エッチングガスが、四塩化ケイ素(SiCl4)、塩化水素(HCl)、及び塩素(Cl2)から選択された少なくとも一の塩素含有物質を有する、
請求項1〜3に記載の流動層反応器を用いる多結晶シリコンの形成方法。 - 前記エッチングガスが、水素、窒素、アルゴン、及びヘリウムから選択された少なくとも一の物質を更に有する、
請求項8に記載の、流動層反応器を用いる多結晶シリコンの製造方法。 - 前記(i)シリコン粒子の形成工程及び/または(iii)前記シリコン析出物の除去工程において、前記反応領域の絶対圧力を1〜20バールの範囲内に維持する、
請求項1〜3に記載の、流動層反応器を用いる多結晶シリコンの形成方法。 - 前記(iii)シリコン析出物の除去工程が、前記エッチングガスを用いて、前記反応ガス供給手段の反応ガスの出口に形成されたシリコン析出物を除去するサブ工程を有する、
請求項1〜3に記載の、流動層反応器を用いる多結晶シリコンの形成方法。 - 前記反応領域に出口が露出した、前記反応ガス供給手段及び/またはエッチングガス供給手段により、前記エッチングガスを供給することで、前記(iii)シリコン析出物の除去工程を実施する、
請求項1〜3に記載の、流動層反応器を用いる多結晶シリコンの形成方法。 - 前記(iii)シリコン析出物の除去工程において、前記シリコン粒子の層が、粒子が非流動化された固定層、または一部粒子が流動化されたままである流動層となるように、流動ガス供給手段を用いて、前記加熱領域に残留した前記シリコン粒子の層に流動ガスを供給する、
請求項12に記載の、流動層反応器を用いる多結晶シリコンの形成方法。 - 前記流動ガスが、水素、窒素、アルゴン、ヘリウム、四塩化ケイ素、トリクロロシラン、ジクロロシラン、及び塩化水素から選択された少なくとも一の物質を有する、
請求項5または13に記載の流動層反応器を用いる多結晶シリコンの形成方法。 - 前記流動ガスにより流動しない充填物の固定層が、前記加熱領域の下部において、前記シリコン粒子の層に更に形成される、
請求項5または13に記載の、流動層反応器を用いる多結晶シリコンの形成方法。 - 前記(iii)シリコン析出物の除去工程において、ガス排出手段を用いて、前記シリコン粒子の層を通過する流動ガス、未反応エッチングガス及び/又はエッチング反応生成ガスを含むエッチング工程の排ガスを、前記流動層反応器の外部に排出する、
請求項12に記載の、流動層反応器を用いる多結晶シリコンの形成方法。 - 前記反応ガスが、モノシラン(SiH4)、ジクロロシラン(SiH2Cl2)、トリクロロシラン(SiHCl3)、及び四塩化ケイ素(SiCl4)から選択された少なくとも一のシリコン含有物質を有する、
請求項1に記載の、流動層反応器を用いる多結晶リコンの形成方法。 - 前記(iii)シリコン析出物の除去工程において、前記シリコン析出物の一部の温度を、500〜1,250℃の範囲内に維持する、
請求項1に記載の、流動層反応器を用いる多結晶シリコンの形成方法。 - 前記(iii)シリコン析出物の除去工程において、前記反応管の内部領域及び/または外部領域に設置された加熱器によりシリコン析出物を加熱する、
請求項1〜4のいずれか又は18に記載の、流動層反応器を用いる多結晶シリコンの形成方法。
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KR20070119328A (ko) | 2007-12-20 |
US20090095710A1 (en) | 2009-04-16 |
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CA2654896C (en) | 2011-05-10 |
US8017024B2 (en) | 2011-09-13 |
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