JP5215526B2 - ハニカム構造の能動ピクセルセンサ - Google Patents
ハニカム構造の能動ピクセルセンサ Download PDFInfo
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- JP5215526B2 JP5215526B2 JP2005352401A JP2005352401A JP5215526B2 JP 5215526 B2 JP5215526 B2 JP 5215526B2 JP 2005352401 A JP2005352401 A JP 2005352401A JP 2005352401 A JP2005352401 A JP 2005352401A JP 5215526 B2 JP5215526 B2 JP 5215526B2
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- 238000009792 diffusion process Methods 0.000 claims description 24
- 230000005540 biological transmission Effects 0.000 claims description 22
- 230000003321 amplification Effects 0.000 claims description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 14
- 239000011295 pitch Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 101100191136 Arabidopsis thaliana PCMP-A2 gene Proteins 0.000 description 1
- 101100422768 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SUL2 gene Proteins 0.000 description 1
- 101100048260 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) UBX2 gene Proteins 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Description
したがって、能動ピクセルセンサのフィルファクタを増加させるピクセルアーキテクチャーの存在が要求される。
本発明の他の目的は、前記能動ピクセルセンサの色フィルタアレイを提供するところにある。
本発明のさらに他の目的は、前記能動ピクセルセンサの読み取り方法を提供するところにある。
以下、添付した図面を参照して本発明の望ましい実施形態を説明することにより、本発明を詳細に説明する。各図面に付された同一参照符号は同一部材を示す。
図7は、本発明の単位ピクセルアレイでピクセルピッチを説明する図である。図7に示すように、一辺の長さをRとするとき、正六角形のフォトダイオードの面積は
201 第1フォトダイオード
202 第2フォトダイオード
203 第3フォトダイオード
204 第1伝送トランジスタ
205 第2伝送トランジスタ
206 第3伝送トランジスタ
207 リセットトランジスタ
208 選択トランジスタ
209 増幅トランジスタ
210,220,230 ピクセル
Claims (9)
- それぞれが六角形の形状を有し、かつ、ハニカム構造で配列された複数個のフォトダイオードのうち、互いに隣接する3個のフォトダイオードからなる単位ピクセルであって、
前記単位ピクセルは、さらに、
前記3個のフォトダイオードに共有され、それらの間の領域に配置される1個のフローティングディフュージョン領域と、
前記3個のフォトダイオードのそれぞれと前記1個のフローティングディフュージョン領域との間に連結されて配置される3個の伝送装置と、
を備えることを特徴とする単位ピクセル。 - 前記単位ピクセルは、
前記フローティングディフュージョン領域に連結されるリセット装置と、
前記フローティングディフュージョン領域に直列連結される選択装置及び増幅装置と、をさらに備えることを特徴とする請求項1に記載の単位ピクセル。 - 前記伝送装置、前記リセット装置、前記選択装置及び前記増幅装置それぞれは、MOSFETであることを特徴とする請求項2に記載の単位ピクセル。
- 前記3個のフォトダイオードのうち、第1及び第2フォトダイオードが、第3フォトダイオードの上端の左側及び右側に配置されることを特徴とする請求項1に記載の単位ピクセル。
- 前記3個のフォトダイオードのうち、第1及び第2フォトダイオードが、第3フォトダイオードの下端の左側及び右側に配置されることを特徴とする請求項1に記載の単位ピクセル。
- 前記単位ピクセルは、前記フォトダイオードを覆うマイクロレンズをさらに備えることを特徴とする請求項1に記載の単位ピクセル。
- 前記マイクロレンズは、円形の形状を有することを特徴とする請求項6に記載の単位ピクセル。
- 前記単位ピクセルは、前記フォトダイオードと前記マイクロレンズとの間に色フィルタをさらに備えることを特徴とする請求項6に記載の単位ピクセル。
- それぞれが六角形の形状を有し、かつ、ハニカム構造で配列された複数個のフォトダイオードのうち、互いに隣接して配置された第1、第2及び第3フォトダイオードそれぞれの相異なる色信号をそれぞれの電気的信号に変換するステップと、
前記第1、第2及び第3フォトダイオードからのそれぞれの電気的信号を、前記第1、第2及び第3フォトダイオードの間の領域に配置されて共有されたフローティングディフュージョン領域へ伝送するステップと、を含む
ことを特徴とするイメージのセンシング方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040102363A KR100674925B1 (ko) | 2004-12-07 | 2004-12-07 | 허니콤 구조의 능동 픽셀 센서 |
KR10-2004-0102363 | 2004-12-07 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013005490A Division JP5685608B2 (ja) | 2004-12-07 | 2013-01-16 | ハニカム構造の能動ピクセルセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006165567A JP2006165567A (ja) | 2006-06-22 |
JP5215526B2 true JP5215526B2 (ja) | 2013-06-19 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005352401A Active JP5215526B2 (ja) | 2004-12-07 | 2005-12-06 | ハニカム構造の能動ピクセルセンサ |
JP2013005490A Active JP5685608B2 (ja) | 2004-12-07 | 2013-01-16 | ハニカム構造の能動ピクセルセンサ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013005490A Active JP5685608B2 (ja) | 2004-12-07 | 2013-01-16 | ハニカム構造の能動ピクセルセンサ |
Country Status (3)
Country | Link |
---|---|
US (1) | US7382010B2 (ja) |
JP (2) | JP5215526B2 (ja) |
KR (1) | KR100674925B1 (ja) |
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2004
- 2004-12-07 KR KR1020040102363A patent/KR100674925B1/ko active IP Right Grant
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2005
- 2005-07-29 US US11/193,917 patent/US7382010B2/en active Active
- 2005-12-06 JP JP2005352401A patent/JP5215526B2/ja active Active
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2013
- 2013-01-16 JP JP2013005490A patent/JP5685608B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2006165567A (ja) | 2006-06-22 |
US20060118837A1 (en) | 2006-06-08 |
KR100674925B1 (ko) | 2007-01-26 |
JP2013110431A (ja) | 2013-06-06 |
JP5685608B2 (ja) | 2015-03-18 |
KR20060063244A (ko) | 2006-06-12 |
US7382010B2 (en) | 2008-06-03 |
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