JP5212113B2 - 面発光レーザ - Google Patents

面発光レーザ Download PDF

Info

Publication number
JP5212113B2
JP5212113B2 JP2008551040A JP2008551040A JP5212113B2 JP 5212113 B2 JP5212113 B2 JP 5212113B2 JP 2008551040 A JP2008551040 A JP 2008551040A JP 2008551040 A JP2008551040 A JP 2008551040A JP 5212113 B2 JP5212113 B2 JP 5212113B2
Authority
JP
Japan
Prior art keywords
layer
refractive index
bragg reflector
optical resonator
multilayer bragg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008551040A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2008078595A1 (ja
Inventor
隆由 阿南
尚文 鈴木
健一郎 屋敷
正芳 辻
大 畠山
公良 深津
武志 赤川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2008551040A priority Critical patent/JP5212113B2/ja
Publication of JPWO2008078595A1 publication Critical patent/JPWO2008078595A1/ja
Application granted granted Critical
Publication of JP5212113B2 publication Critical patent/JP5212113B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2008551040A 2006-12-27 2007-12-18 面発光レーザ Expired - Fee Related JP5212113B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008551040A JP5212113B2 (ja) 2006-12-27 2007-12-18 面発光レーザ

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006352535 2006-12-27
JP2006352535 2006-12-27
JP2008551040A JP5212113B2 (ja) 2006-12-27 2007-12-18 面発光レーザ
PCT/JP2007/074275 WO2008078595A1 (fr) 2006-12-27 2007-12-18 Laser à émission par la surface

Publications (2)

Publication Number Publication Date
JPWO2008078595A1 JPWO2008078595A1 (ja) 2010-04-22
JP5212113B2 true JP5212113B2 (ja) 2013-06-19

Family

ID=39562388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008551040A Expired - Fee Related JP5212113B2 (ja) 2006-12-27 2007-12-18 面発光レーザ

Country Status (2)

Country Link
JP (1) JP5212113B2 (fr)
WO (1) WO2008078595A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5304136B2 (ja) * 2008-09-25 2013-10-02 日本電気株式会社 面発光レーザ及びその製造方法
JP5812175B1 (ja) 2014-10-03 2015-11-11 富士ゼロックス株式会社 面発光型半導体レーザ素子および面発光型半導体レーザ素子の製造方法
JP7155723B2 (ja) * 2018-08-02 2022-10-19 株式会社リコー 発光素子及びその製造方法
JP7369947B2 (ja) * 2019-08-30 2023-10-27 学校法人 名城大学 窒化物半導体発光素子の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167484A (ja) * 1990-10-31 1992-06-15 Toshiba Corp 光半導体装置
JP2000174329A (ja) * 1998-12-03 2000-06-23 Oki Electric Ind Co Ltd 垂直微小共振器型発光ダイオード
JP2002204027A (ja) * 1992-10-15 2002-07-19 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
JP2002353568A (ja) * 2001-05-28 2002-12-06 Hitachi Ltd 半導体レーザとそれを用いた光モジュール及び光通信システム
JP2004327992A (ja) * 2003-04-25 2004-11-18 Agilent Technol Inc 半導体レーザ
JP2005039102A (ja) * 2003-07-17 2005-02-10 Yokogawa Electric Corp 面発光レーザ
JP2005535141A (ja) * 2002-07-30 2005-11-17 独立行政法人科学技術振興機構 高屈折率材料内で電界が最大の半波長マイクロポスト・マイクロキャビティ

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167484A (ja) * 1990-10-31 1992-06-15 Toshiba Corp 光半導体装置
JP2002204027A (ja) * 1992-10-15 2002-07-19 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
JP2000174329A (ja) * 1998-12-03 2000-06-23 Oki Electric Ind Co Ltd 垂直微小共振器型発光ダイオード
JP2002353568A (ja) * 2001-05-28 2002-12-06 Hitachi Ltd 半導体レーザとそれを用いた光モジュール及び光通信システム
JP2005535141A (ja) * 2002-07-30 2005-11-17 独立行政法人科学技術振興機構 高屈折率材料内で電界が最大の半波長マイクロポスト・マイクロキャビティ
JP2004327992A (ja) * 2003-04-25 2004-11-18 Agilent Technol Inc 半導体レーザ
JP2005039102A (ja) * 2003-07-17 2005-02-10 Yokogawa Electric Corp 面発光レーザ

Also Published As

Publication number Publication date
WO2008078595A1 (fr) 2008-07-03
JPWO2008078595A1 (ja) 2010-04-22

Similar Documents

Publication Publication Date Title
US7881358B2 (en) Surface emitting laser
JP4184769B2 (ja) 面発光型半導体レーザ及びその製造方法
JP5272308B2 (ja) 電流狭窄構造および半導体レーザ
JP5029254B2 (ja) 面発光レーザ
JP5735765B2 (ja) 面発光レーザ、面発光レーザアレイ、面発光レーザアレイを光源とする表示装置、プリンタヘッドおよびプリンタ
JP5304136B2 (ja) 面発光レーザ及びその製造方法
US8228964B2 (en) Surface emitting laser, surface emitting laser array, and image formation apparatus
US7907653B2 (en) Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array
WO2015033649A1 (fr) Laser à cavité verticale émettant par la surface et son procédé de fabrication
JP5212113B2 (ja) 面発光レーザ
US20140227007A1 (en) Surface-emitting laser and image forming apparatus using the same
US7817691B2 (en) Light emitting device
JP5355276B2 (ja) 面発光レーザ
JP2007087994A (ja) 面発光半導体レーザ素子
JPWO2005074080A1 (ja) 面発光レーザ及びその製造方法
US7391798B2 (en) Semiconductor laser device
JP3876886B2 (ja) 面発光型半導体レーザ装置の製造方法
JP6045832B2 (ja) 面発光レーザ素子
JP5392087B2 (ja) 面発光レーザ
JP2006019470A (ja) 面発光半導体レーザおよび光モジュール
JP2005251860A (ja) 面発光レーザ装置
US20120270346A1 (en) Asymmetric dbr pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption
Onishi et al. High power and low resistive GaInNAs-VCSELs with buried tunnel junctions
Huffaker et al. Tunnel injection active region in an oxide-confined vertical-cavity surface-emitting laser
JP2020064926A (ja) 垂直共振器型面発光レーザ

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120327

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120525

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121127

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130107

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130129

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130211

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160308

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees