JP2004327992A - 半導体レーザ - Google Patents
半導体レーザ Download PDFInfo
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- JP2004327992A JP2004327992A JP2004124357A JP2004124357A JP2004327992A JP 2004327992 A JP2004327992 A JP 2004327992A JP 2004124357 A JP2004124357 A JP 2004124357A JP 2004124357 A JP2004124357 A JP 2004124357A JP 2004327992 A JP2004327992 A JP 2004327992A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06226—Modulation at ultra-high frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】レーザ、pスペーサ(67)、nスペーサ(66)および活性領域(63)が開示される。pスペーサはpドープ領域(57)および非ドープ領域(58)を有し、nスペーサはnドープ領域(69)および非ドープ領域(68)を有する。活性領域は、pスペーサの非ドープ領域とnスペーサの非ドープ領域の間に位置付けられる。活性領域は、正孔および電子の再結合を介して波長λの光を生成する。pスペーサの非ドープ領域の厚さは、nスペーサの非ドープ領域の厚さとは異なり、一実施形態では、前者は後者よりも大きい。
【選択図】図5
Description
12 下部ミラー
13 光キャビティ
14 上部ミラー
15 活性領域
25 量子井戸層
27 スペーサ層
28 スペーサ層
67 pスペーサ
66 nスペーサ
57 pドープ領域
58 非ドープ領域
69 nドープ領域
68 非ドープ領域
63 活性領域
Claims (6)
- pドープ領域および非ドープ領域を有するpスペーサと、
nドープ領域および非ドープ領域を有するnスペーサと、
前記pスペーサの前記非ドープ領域および前記nスペーサの前記非ドープ領域の間の活性領域であって、正孔と電子の再結合によって波長λの光を生成する活性領域と、を有し、
前記pスペーサの前記非ドープ領域は、前記nスペーサの前記非ドープ領域とは異なる厚さを有する、
レーザ。 - 前記pスペーサは、前記nスペーサより大きな厚さを有する、請求項1に記載のレーザ。
- 前記pスペーサおよび前記nスペーサは、厚さLc=(n+1)λ/2を有する光キャビティを形成し、nは、2より大きい整数である、請求項1に記載のレーザ。
- 前記pスペーサの前記非ドープ領域は、20nmより大きな厚さを有する、請求項1に記載のレーザ。
- 前記nスペーサの前記の非ドープ領域は、40nmより小さな厚さを有する、請求項1に記載のレーザ。
- 前記キャビティは電磁定在波を有し、前記活性層は、該電磁定在波の最大値に位置する、請求項3に記載のレーザ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/423,503 US20040213312A1 (en) | 2003-04-25 | 2003-04-25 | Semiconductor laser having improved high-frequency, large signal response at reduced operating current |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2004327992A true JP2004327992A (ja) | 2004-11-18 |
Family
ID=33299135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004124357A Pending JP2004327992A (ja) | 2003-04-25 | 2004-04-20 | 半導体レーザ |
Country Status (2)
Country | Link |
---|---|
US (1) | US20040213312A1 (ja) |
JP (1) | JP2004327992A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7881358B2 (en) | 2006-12-27 | 2011-02-01 | Nec Corporation | Surface emitting laser |
EP2346123A2 (en) | 2010-01-15 | 2011-07-20 | Ricoh Company, Ltd. | Surface emitting laser element, surface emitting laser array, optical scanning apparatus, and image forming apparatus |
JP5212113B2 (ja) * | 2006-12-27 | 2013-06-19 | 日本電気株式会社 | 面発光レーザ |
US9466945B2 (en) | 2014-10-03 | 2016-10-11 | Fuji Xerox Co., Ltd. | Surface-emitting semiconductor laser device and method for producing the same |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7809040B2 (en) | 2007-02-14 | 2010-10-05 | Canon Kabushiki Kaisha | Red surface emitting laser element, image forming device, and image display apparatus |
US20210036489A1 (en) * | 2019-08-02 | 2021-02-04 | Innolight Technology (Suzhou) Ltd. | Narrow linewidth external cavity laser and optical module |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62104188A (ja) * | 1985-10-31 | 1987-05-14 | Fujitsu Ltd | 半導体レ−ザ |
JPH07288362A (ja) * | 1994-02-25 | 1995-10-31 | Matsushita Electric Ind Co Ltd | 垂直共振器型面発光半導体レーザ |
JP2000349393A (ja) * | 1999-03-26 | 2000-12-15 | Fuji Xerox Co Ltd | 半導体デバイス、面発光型半導体レーザ、及び端面発光型半導体レーザ |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5034344A (en) * | 1989-07-17 | 1991-07-23 | Bell Communications Research, Inc. | Method of making a surface emitting semiconductor laser |
US5115441A (en) * | 1991-01-03 | 1992-05-19 | At&T Bell Laboratories | Vertical cavity surface emmitting lasers with transparent electrodes |
US5557627A (en) * | 1995-05-19 | 1996-09-17 | Sandia Corporation | Visible-wavelength semiconductor lasers and arrays |
US6849866B2 (en) * | 1996-10-16 | 2005-02-01 | The University Of Connecticut | High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration |
US6579612B1 (en) * | 1999-06-24 | 2003-06-17 | International Business Machines Corporation | Magnetostrictive sensor structure |
US6795478B2 (en) * | 2002-03-28 | 2004-09-21 | Applied Optoelectronics, Inc. | VCSEL with antiguide current confinement layer |
-
2003
- 2003-04-25 US US10/423,503 patent/US20040213312A1/en not_active Abandoned
-
2004
- 2004-04-20 JP JP2004124357A patent/JP2004327992A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62104188A (ja) * | 1985-10-31 | 1987-05-14 | Fujitsu Ltd | 半導体レ−ザ |
JPH07288362A (ja) * | 1994-02-25 | 1995-10-31 | Matsushita Electric Ind Co Ltd | 垂直共振器型面発光半導体レーザ |
JP2000349393A (ja) * | 1999-03-26 | 2000-12-15 | Fuji Xerox Co Ltd | 半導体デバイス、面発光型半導体レーザ、及び端面発光型半導体レーザ |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7881358B2 (en) | 2006-12-27 | 2011-02-01 | Nec Corporation | Surface emitting laser |
JP5212113B2 (ja) * | 2006-12-27 | 2013-06-19 | 日本電気株式会社 | 面発光レーザ |
EP2346123A2 (en) | 2010-01-15 | 2011-07-20 | Ricoh Company, Ltd. | Surface emitting laser element, surface emitting laser array, optical scanning apparatus, and image forming apparatus |
US9466945B2 (en) | 2014-10-03 | 2016-10-11 | Fuji Xerox Co., Ltd. | Surface-emitting semiconductor laser device and method for producing the same |
Also Published As
Publication number | Publication date |
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US20040213312A1 (en) | 2004-10-28 |
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