JP5210613B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5210613B2
JP5210613B2 JP2007320422A JP2007320422A JP5210613B2 JP 5210613 B2 JP5210613 B2 JP 5210613B2 JP 2007320422 A JP2007320422 A JP 2007320422A JP 2007320422 A JP2007320422 A JP 2007320422A JP 5210613 B2 JP5210613 B2 JP 5210613B2
Authority
JP
Japan
Prior art keywords
film
substrate
circuit
electric double
double layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007320422A
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English (en)
Japanese (ja)
Other versions
JP2008181493A5 (enExample
JP2008181493A (ja
Inventor
薫 土屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007320422A priority Critical patent/JP5210613B2/ja
Publication of JP2008181493A publication Critical patent/JP2008181493A/ja
Publication of JP2008181493A5 publication Critical patent/JP2008181493A5/ja
Application granted granted Critical
Publication of JP5210613B2 publication Critical patent/JP5210613B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Thin Film Transistor (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
JP2007320422A 2006-12-27 2007-12-12 半導体装置 Expired - Fee Related JP5210613B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007320422A JP5210613B2 (ja) 2006-12-27 2007-12-12 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006353336 2006-12-27
JP2006353336 2006-12-27
JP2007320422A JP5210613B2 (ja) 2006-12-27 2007-12-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2008181493A JP2008181493A (ja) 2008-08-07
JP2008181493A5 JP2008181493A5 (enExample) 2011-01-27
JP5210613B2 true JP5210613B2 (ja) 2013-06-12

Family

ID=39582459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007320422A Expired - Fee Related JP5210613B2 (ja) 2006-12-27 2007-12-12 半導体装置

Country Status (2)

Country Link
US (3) US8517275B2 (enExample)
JP (1) JP5210613B2 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1962408B1 (en) * 2006-11-16 2015-05-27 Semiconductor Energy Laboratory Co., Ltd. Radio field intensity measurement device, and radio field intensity detector and game console using the same
US7750852B2 (en) 2007-04-13 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8716850B2 (en) * 2007-05-18 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2310987A4 (en) 2008-07-03 2011-09-14 Mario W Cardullo NANO RFID METHOD AND DEVICE
US8298949B2 (en) 2009-01-07 2012-10-30 Lam Research Corporation Profile and CD uniformity control by plasma oxidation treatment
TWI504059B (zh) * 2010-03-12 2015-10-11 Hon Hai Prec Ind Co Ltd 射頻識別標籤天線及其製造方法
KR101926646B1 (ko) * 2010-04-16 2018-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치용 전극 및 그 제작 방법
US20110304305A1 (en) * 2010-06-15 2011-12-15 Nokia Corporation apparatus and method for a capacitive element in a structure
EP2599366A4 (en) * 2010-07-28 2014-12-24 Nokia Corp TELECOMMUNICATIONS APPARATUS AND ASSOCIATED METHODS
US8358110B2 (en) * 2010-07-29 2013-01-22 Nokia Corporation Integration of supercapacitors within a flexible printed circuit and associated methods
US8969132B2 (en) * 2010-09-20 2015-03-03 Nuvotronics, Llc Device package and methods for the fabrication thereof
WO2012042286A1 (en) * 2010-09-28 2012-04-05 Nokia Corporation An apparatus and associated methods
JP2013175636A (ja) * 2012-02-27 2013-09-05 Dainippon Screen Mfg Co Ltd 電気二重層キャパシタの製造装置及び製造方法並びにそれにより製造された電気二重層キャパシタを備える電子シート
WO2014027220A1 (en) * 2012-08-15 2014-02-20 Nokia Corporation Apparatus and methods for electrical energy harvesting and/or wireless communication
US9337152B2 (en) 2013-03-15 2016-05-10 Nuvotronics, Inc Formulation for packaging an electronic device and assemblies made therefrom
US10170315B2 (en) 2013-07-17 2019-01-01 Globalfoundries Inc. Semiconductor device having local buried oxide
DE102013109212B4 (de) * 2013-08-26 2019-07-25 Infineon Technologies Ag RFID-Vorrichtung, RFID-Lesegerät, Portionsheißgetränkmaschine und System
US9583277B2 (en) * 2013-09-30 2017-02-28 The Paper Battery Company, Inc. Ultra-capacitor structures and electronic systems with ultra-capacitor structures
US9252272B2 (en) 2013-11-18 2016-02-02 Globalfoundries Inc. FinFET semiconductor device having local buried oxide
CN104051847B (zh) * 2014-06-27 2016-07-06 南通富士通微电子股份有限公司 射频识别天线
CN104051839B (zh) * 2014-06-27 2016-06-01 南通富士通微电子股份有限公司 射频识别天线的形成方法
US10204898B2 (en) * 2014-08-08 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6739150B2 (ja) 2014-08-08 2020-08-12 株式会社半導体エネルギー研究所 半導体装置、発振回路、位相同期回路及び電子機器
FR3026530B1 (fr) * 2014-09-30 2017-12-22 Oberthur Technologies Document electronique a extremites d'antenne inclinees, support d'antenne pour un tel document electronique et procede de fabrication d'un tel document
US9380698B1 (en) * 2014-12-05 2016-06-28 VivaLnk, Inc. Stretchable electronic patch having a foldable circuit layer
US9378450B1 (en) * 2014-12-05 2016-06-28 Vivalnk, Inc Stretchable electronic patch having a circuit layer undulating in the thickness direction
US11048893B2 (en) * 2016-05-25 2021-06-29 William Marsh Rice University Methods and systems related to remote measuring and sensing
SG11202000255YA (en) 2017-07-14 2020-02-27 Visa Int Service Ass Method, system, and computer program product for user communication with merchants associated with transactions
JP6306258B1 (ja) * 2017-09-20 2018-04-04 誠敏 中野 Ｉｃタグシステム
JP6362759B1 (ja) * 2017-12-19 2018-07-25 誠敏 中野 Ｉｃタグ
CN116132956B (zh) * 2022-12-15 2023-09-05 香港理工大学深圳研究院 一种基于相机磁场干扰的近场通信方法及系统

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0230907A3 (en) * 1986-01-17 1989-05-31 Asahi Glass Company Ltd. Electric double layer capacitor having high capacity
JP2758030B2 (ja) * 1988-07-04 1998-05-25 ソニー株式会社 薄型電子機器とその製造方法
US5643804A (en) * 1993-05-21 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a hybrid integrated circuit component having a laminated body
JP2001195307A (ja) * 2000-01-06 2001-07-19 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
US6577015B1 (en) * 2000-03-07 2003-06-10 Micron Technology, Inc. Partial slot cover for encapsulation process
US6284406B1 (en) * 2000-06-09 2001-09-04 Ntk Powerdex, Inc. IC card with thin battery
JP3608531B2 (ja) 2000-08-31 2005-01-12 セイコーエプソン株式会社 電気光学装置及び投射型表示装置
US6636284B2 (en) * 2000-08-11 2003-10-21 Seiko Epson Corporation System and method for providing an electro-optical device having light shield layers
JP3900810B2 (ja) * 2000-08-31 2007-04-04 株式会社パワーシステム 電気二重層キャパシタ
JP4719852B2 (ja) 2002-10-18 2011-07-06 シンボル テクノロジーズ， インコーポレイテッド パッシブｒｆｉｄタグの不必要な再交渉を最小化するためのシステムおよび方法
JP2004177989A (ja) * 2002-11-22 2004-06-24 Sony Corp 非接触ｉｃカード
JP2004221531A (ja) * 2002-12-26 2004-08-05 Toin Gakuen 光充電可能な積層型電気二重層キャパシタ
US7294209B2 (en) * 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
JP2004297753A (ja) * 2003-02-07 2004-10-21 Nec Tokin Corp 電源回路、及び該電源回路を備えた通信機器
JP2005051223A (ja) 2003-07-11 2005-02-24 Nec Corp 薄膜トランジスタ、ｔｆｔ基板、液晶表示装置、及び、薄膜トランジスタの製造方法
US7123314B2 (en) * 2003-07-11 2006-10-17 Nec Corporation Thin-film transistor with set trap level densities, and method of manufactures
US7768405B2 (en) * 2003-12-12 2010-08-03 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
JP2005316724A (ja) 2004-04-28 2005-11-10 Matsushita Electric Works Ltd アクティブ型ｒｆｉｄタグ
JP4611093B2 (ja) * 2004-05-12 2011-01-12 セイコーインスツル株式会社 電波発電回路
JP2006024087A (ja) 2004-07-09 2006-01-26 Nec Corp 無線デバイス、その製造方法、その検査方法及び検査装置並びに無線装置及びその製造方法
JP5072208B2 (ja) * 2004-09-24 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI372413B (en) * 2004-09-24 2012-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same, and electric appliance
JP2006127363A (ja) * 2004-11-01 2006-05-18 Advance Design Corp 非接触ｉｃ媒体
US8783577B2 (en) * 2005-03-15 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device having the same
US7659892B2 (en) * 2005-03-17 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Display device and portable terminal
EP1908032A4 (en) * 2005-07-19 2011-02-02 Prec Dynamics Corp SEMI-ACTIVE RADIO FREQUENCY IDENTIFICATION LABEL AND ASSOCIATED METHODS
CN102360442B (zh) * 2006-03-10 2015-01-07 株式会社半导体能源研究所 半导体器件及其操作方法
WO2007105607A1 (en) * 2006-03-10 2007-09-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2002383B1 (en) * 2006-03-15 2012-04-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103078368B (zh) * 2006-03-15 2016-04-13 株式会社半导体能源研究所 电力供应系统和用于机动车的电力供应系统
CN101385039B (zh) * 2006-03-15 2012-03-21 株式会社半导体能源研究所 半导体器件

Also Published As

Publication number Publication date
US20130334319A1 (en) 2013-12-19
US20180247174A1 (en) 2018-08-30
US10380472B2 (en) 2019-08-13
JP2008181493A (ja) 2008-08-07
US20080156886A1 (en) 2008-07-03
US8517275B2 (en) 2013-08-27
US9965713B2 (en) 2018-05-08

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