JP5210594B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5210594B2
JP5210594B2 JP2007277694A JP2007277694A JP5210594B2 JP 5210594 B2 JP5210594 B2 JP 5210594B2 JP 2007277694 A JP2007277694 A JP 2007277694A JP 2007277694 A JP2007277694 A JP 2007277694A JP 5210594 B2 JP5210594 B2 JP 5210594B2
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Japan
Prior art keywords
layer
electrode layer
organic
light
substrate
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Expired - Fee Related
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JP2007277694A
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Japanese (ja)
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JP2008135731A (ja
JP2008135731A5 (https=
Inventor
厳 藤井
絵里香 高橋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007277694A priority Critical patent/JP5210594B2/ja
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Publication of JP2008135731A5 publication Critical patent/JP2008135731A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2007277694A 2006-10-31 2007-10-25 半導体装置の作製方法 Expired - Fee Related JP5210594B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007277694A JP5210594B2 (ja) 2006-10-31 2007-10-25 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006295423 2006-10-31
JP2006295423 2006-10-31
JP2007277694A JP5210594B2 (ja) 2006-10-31 2007-10-25 半導体装置の作製方法

Publications (3)

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JP2008135731A JP2008135731A (ja) 2008-06-12
JP2008135731A5 JP2008135731A5 (https=) 2010-11-11
JP5210594B2 true JP5210594B2 (ja) 2013-06-12

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JP2007277694A Expired - Fee Related JP5210594B2 (ja) 2006-10-31 2007-10-25 半導体装置の作製方法

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302441A (ja) * 2008-06-17 2009-12-24 Konica Minolta Holdings Inc 有機ｔｆｔ
JP2010016072A (ja) * 2008-07-02 2010-01-21 Canon Inc 薄膜トランジスタ
EP2308093B1 (en) * 2008-08-04 2020-04-15 The Trustees of Princeton University Hybrid dielectric material for thin film transistors
TWI508282B (zh) * 2008-08-08 2015-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
WO2010029859A1 (en) * 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101273913B1 (ko) * 2008-09-19 2013-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
EP2172804B1 (en) * 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
JP5587591B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
TWI589006B (zh) 2008-11-07 2017-06-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP5587592B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
JP5504633B2 (ja) * 2009-01-26 2014-05-28 株式会社リコー 多層配線構造体、その製造方法、および表示装置
TWI511288B (zh) * 2009-03-27 2015-12-01 Semiconductor Energy Lab 半導體裝置
JP5663231B2 (ja) * 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
US8558295B2 (en) 2009-08-25 2013-10-15 Electronics And Telecommunications Research Institute Nonvolatile memory cell and method of manufacturing the same
US8115883B2 (en) * 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027702A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027701A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011043163A1 (en) * 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101591613B1 (ko) * 2009-10-21 2016-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5624628B2 (ja) * 2010-11-10 2014-11-12 株式会社日立製作所 半導体装置
CN103560211B (zh) * 2013-11-13 2017-04-05 深圳市华星光电技术有限公司 有机电致发光器件的制作方法及制作的有机电致发光器件
JP5997299B2 (ja) * 2015-01-05 2016-09-28 株式会社カネカ 薄膜トランジスタ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003059940A (ja) * 2001-08-08 2003-02-28 Fuji Photo Film Co Ltd ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法
US7102155B2 (en) * 2003-09-04 2006-09-05 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
JP4666999B2 (ja) * 2003-10-28 2011-04-06 株式会社半導体エネルギー研究所 配線及び薄膜トランジスタの作製方法
JP4884675B2 (ja) * 2004-01-26 2012-02-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5057652B2 (ja) * 2004-03-24 2012-10-24 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP4482931B2 (ja) * 2005-03-01 2010-06-16 セイコーエプソン株式会社 半導体素子の製造方法
JP2007129007A (ja) * 2005-11-02 2007-05-24 Hitachi Ltd 有機半導体膜を有する半導体装置の製造方法
JP5036219B2 (ja) * 2006-05-30 2012-09-26 株式会社日立製作所 有機薄膜トランジスタを有する半導体装置の製造方法

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