JP5210594B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5210594B2 JP5210594B2 JP2007277694A JP2007277694A JP5210594B2 JP 5210594 B2 JP5210594 B2 JP 5210594B2 JP 2007277694 A JP2007277694 A JP 2007277694A JP 2007277694 A JP2007277694 A JP 2007277694A JP 5210594 B2 JP5210594 B2 JP 5210594B2
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Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
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| JP2009302441A (ja) * | 2008-06-17 | 2009-12-24 | Konica Minolta Holdings Inc | 有機ｔｆｔ |
| JP2010016072A (ja) * | 2008-07-02 | 2010-01-21 | Canon Inc | 薄膜トランジスタ |
| EP2308093B1 (en) * | 2008-08-04 | 2020-04-15 | The Trustees of Princeton University | Hybrid dielectric material for thin film transistors |
| TWI508282B (zh) * | 2008-08-08 | 2015-11-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| KR101623224B1 (ko) * | 2008-09-12 | 2016-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| KR101507324B1 (ko) | 2008-09-19 | 2015-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| EP2172804B1 (en) * | 2008-10-03 | 2016-05-11 | Semiconductor Energy Laboratory Co, Ltd. | Display device |
| JP5587591B2 (ja) * | 2008-11-07 | 2014-09-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TW202025500A (zh) | 2008-11-07 | 2020-07-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| JP5587592B2 (ja) * | 2008-11-07 | 2014-09-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5504633B2 (ja) * | 2009-01-26 | 2014-05-28 | 株式会社リコー | 多層配線構造体、その製造方法、および表示装置 |
| TWI529942B (zh) * | 2009-03-27 | 2016-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| JP5663231B2 (ja) * | 2009-08-07 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US8558295B2 (en) | 2009-08-25 | 2013-10-15 | Electronics And Telecommunications Research Institute | Nonvolatile memory cell and method of manufacturing the same |
| US8115883B2 (en) * | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| WO2011027702A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| WO2011027701A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| WO2011043163A1 (en) * | 2009-10-05 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011048929A1 (en) * | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011052382A1 (en) | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5624628B2 (ja) * | 2010-11-10 | 2014-11-12 | 株式会社日立製作所 | 半導体装置 |
| CN103560211B (zh) * | 2013-11-13 | 2017-04-05 | 深圳市华星光电技术有限公司 | 有机电致发光器件的制作方法及制作的有机电致发光器件 |
| JP5997299B2 (ja) * | 2015-01-05 | 2016-09-28 | 株式会社カネカ | 薄膜トランジスタ |
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| JP2003059940A (ja) * | 2001-08-08 | 2003-02-28 | Fuji Photo Film Co Ltd | ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法 |
| US7102155B2 (en) * | 2003-09-04 | 2006-09-05 | Hitachi, Ltd. | Electrode substrate, thin film transistor, display device and their production |
| JP4666999B2 (ja) * | 2003-10-28 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 配線及び薄膜トランジスタの作製方法 |
| JP4884675B2 (ja) * | 2004-01-26 | 2012-02-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5057652B2 (ja) * | 2004-03-24 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| JP4482931B2 (ja) * | 2005-03-01 | 2010-06-16 | セイコーエプソン株式会社 | 半導体素子の製造方法 |
| JP2007129007A (ja) * | 2005-11-02 | 2007-05-24 | Hitachi Ltd | 有機半導体膜を有する半導体装置の製造方法 |
| JP5036219B2 (ja) * | 2006-05-30 | 2012-09-26 | 株式会社日立製作所 | 有機薄膜トランジスタを有する半導体装置の製造方法 |
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