JP5196779B2 - 光伝導素子及びセンサ装置 - Google Patents

光伝導素子及びセンサ装置 Download PDF

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Publication number
JP5196779B2
JP5196779B2 JP2006342883A JP2006342883A JP5196779B2 JP 5196779 B2 JP5196779 B2 JP 5196779B2 JP 2006342883 A JP2006342883 A JP 2006342883A JP 2006342883 A JP2006342883 A JP 2006342883A JP 5196779 B2 JP5196779 B2 JP 5196779B2
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Japan
Prior art keywords
substrate
photoconductive
film
etchant
thin film
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Expired - Fee Related
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JP2006342883A
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English (en)
Japanese (ja)
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JP2007281419A5 (enExample
JP2007281419A (ja
Inventor
敏彦 尾内
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Canon Inc
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Canon Inc
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Priority to JP2006342883A priority Critical patent/JP5196779B2/ja
Priority to US11/683,782 priority patent/US7633043B2/en
Publication of JP2007281419A publication Critical patent/JP2007281419A/ja
Priority to US12/612,798 priority patent/US7947942B2/en
Publication of JP2007281419A5 publication Critical patent/JP2007281419A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2006342883A 2006-03-17 2006-12-20 光伝導素子及びセンサ装置 Expired - Fee Related JP5196779B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006342883A JP5196779B2 (ja) 2006-03-17 2006-12-20 光伝導素子及びセンサ装置
US11/683,782 US7633043B2 (en) 2006-03-17 2007-03-08 Photoconductive element and sensor device
US12/612,798 US7947942B2 (en) 2006-03-17 2009-11-05 Photoconductive element and sensor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006073613 2006-03-17
JP2006073613 2006-03-17
JP2006342883A JP5196779B2 (ja) 2006-03-17 2006-12-20 光伝導素子及びセンサ装置

Publications (3)

Publication Number Publication Date
JP2007281419A JP2007281419A (ja) 2007-10-25
JP2007281419A5 JP2007281419A5 (enExample) 2010-02-18
JP5196779B2 true JP5196779B2 (ja) 2013-05-15

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JP2006342883A Expired - Fee Related JP5196779B2 (ja) 2006-03-17 2006-12-20 光伝導素子及びセンサ装置

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US (2) US7633043B2 (enExample)
JP (1) JP5196779B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2610222C1 (ru) * 2015-12-02 2017-02-08 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Материал для фотопроводящих антенн

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JP5196779B2 (ja) * 2006-03-17 2013-05-15 キヤノン株式会社 光伝導素子及びセンサ装置
JP4857027B2 (ja) * 2006-05-31 2012-01-18 キヤノン株式会社 レーザ素子
JP4958278B2 (ja) * 2007-03-13 2012-06-20 キヤノン株式会社 検査装置
DE102007063625B4 (de) * 2007-03-15 2009-10-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photoleiter und Verfahren zum Herstellen desselben
JP2009210421A (ja) * 2008-03-04 2009-09-17 Sony Corp テラヘルツ分光装置
US20100067203A1 (en) * 2008-07-08 2010-03-18 T-Ray Science Inc. Apparatus for carrying photoconductive integrated circuits
JP5392888B2 (ja) * 2008-07-08 2014-01-22 独立行政法人理化学研究所 近接場テラヘルツ光検出器
WO2010006440A1 (en) * 2008-07-18 2010-01-21 T-Ray Science Inc. Terahertz photoconductive antennas having transparent conductor electrodes and methods of making same
JP5328265B2 (ja) * 2008-08-25 2013-10-30 キヤノン株式会社 テラヘルツ波発生素子、及びテラヘルツ波発生装置
JP5717335B2 (ja) * 2009-01-23 2015-05-13 キヤノン株式会社 分析装置
KR101291319B1 (ko) * 2009-09-18 2013-07-30 한국전자통신연구원 테라헤르츠파 발생/검출기 및 그의 제조방법
KR20110061827A (ko) * 2009-12-02 2011-06-10 한국전자통신연구원 다결정 갈륨비소 박막을 포함하는 광전도체 소자 및 그 제조방법
US8642964B2 (en) * 2010-08-31 2014-02-04 The United States of America, as represented by the Secretary of Commerce, NIST High repetition rate photoconductive terahertz emitter using a radio frequency bias
KR20120036745A (ko) * 2010-10-08 2012-04-18 한국전자통신연구원 테라헤르츠파 발생 및 검출을 위한 집속렌즈 일체형 광전도 안테나 소자 및 그 제조방법
JP6062640B2 (ja) * 2011-03-18 2017-01-18 キヤノン株式会社 光伝導素子
EP2546634B1 (en) * 2011-07-14 2019-04-17 SCREEN Holdings Co., Ltd. Inspection apparatus and inspection method
JP2013076618A (ja) * 2011-09-30 2013-04-25 Sony Corp 光伝導素子、レンズ、テラヘルツ放射顕微鏡及びデバイスの製造方法
JP5892597B2 (ja) 2012-02-24 2016-03-23 株式会社Ｓｃｒｅｅｎホールディングス 検査装置および検査方法
JP6225461B2 (ja) * 2012-06-12 2017-11-08 株式会社リコー 照明装置及び位置情報管理システム
US20140292488A1 (en) * 2013-03-29 2014-10-02 Jerome Joseph Trohak InSight
EP3035394A1 (en) * 2014-12-17 2016-06-22 Centre National de la Recherche Scientifique Photoconductive antenna for terahertz waves, method for producing such photoconductive antenna and terahertz time domain spectroscopy system
FR3030787B1 (fr) * 2014-12-23 2017-01-27 Centre Nat Rech Scient Procede de re-focalisation d'un montage optique d'analyse d'echantillons

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JP3194503B2 (ja) * 1992-06-04 2001-07-30 キヤノン株式会社 化合物半導体装置及びその製造方法
CA2132043C (en) * 1993-09-17 1999-03-23 Toshihiko Ouchi Method and apparatus for frequency modulating a semiconductor laser, and an optical communication system using the same
JP3244976B2 (ja) * 1994-12-05 2002-01-07 キヤノン株式会社 半導体レーザの駆動方法及び半導体レーザ装置及び光通信方法及びノード及び光通信システム
US6089442A (en) * 1996-04-10 2000-07-18 Canon Kabushiki Kaisha Electrode connection method
US5789750A (en) * 1996-09-09 1998-08-04 Lucent Technologies Inc. Optical system employing terahertz radiation
JP3854693B2 (ja) * 1996-09-30 2006-12-06 キヤノン株式会社 半導体レーザの製造方法
JPH11168262A (ja) * 1997-09-30 1999-06-22 Canon Inc 面型光デバイス、その製造方法、および表示装置
JPH11168263A (ja) * 1997-09-30 1999-06-22 Canon Inc 光デバイス装置及びその製造方法
JP4368082B2 (ja) * 1999-06-21 2009-11-18 浜松ホトニクス株式会社 テラヘルツ波分光器
JP3728147B2 (ja) * 1999-07-16 2005-12-21 キヤノン株式会社 光電気混載配線基板
JP3990846B2 (ja) * 1999-08-27 2007-10-17 キヤノン株式会社 面型光素子、その製造方法、およびこれを用いた装置
JP4001373B2 (ja) * 2003-01-21 2007-10-31 独立行政法人理化学研究所 集積回路断線検査方法と装置
JP3927913B2 (ja) * 2003-03-05 2007-06-13 キヤノン株式会社 光電気混載装置、及びその駆動方法
JP4164423B2 (ja) * 2003-08-29 2008-10-15 キヤノン株式会社 センシング部とポインティングデバイスとを含み構成される装置
JP4785392B2 (ja) * 2004-03-26 2011-10-05 キヤノン株式会社 テラヘルツ電磁波の発生素子の製造方法
US7615787B2 (en) * 2004-03-26 2009-11-10 Canon Kabushiki Kaisha Photo-semiconductor device and method of manufacturing the same
JP4794878B2 (ja) * 2004-03-26 2011-10-19 キヤノン株式会社 光伝導素子
JP3913253B2 (ja) * 2004-07-30 2007-05-09 キヤノン株式会社 光半導体装置およびその製造方法
JP3922463B2 (ja) * 2004-09-30 2007-05-30 独立行政法人科学技術振興機構 赤外光放射装置および赤外光検出装置ならびに時系列変換パルス分光計測装置
JP2006313803A (ja) * 2005-05-09 2006-11-16 Matsushita Electric Ind Co Ltd テラヘルツ電磁波発生装置
JP4402026B2 (ja) * 2005-08-30 2010-01-20 キヤノン株式会社 センシング装置
JP5196779B2 (ja) * 2006-03-17 2013-05-15 キヤノン株式会社 光伝導素子及びセンサ装置
JP4857027B2 (ja) * 2006-05-31 2012-01-18 キヤノン株式会社 レーザ素子
JP4977048B2 (ja) * 2007-02-01 2012-07-18 キヤノン株式会社 アンテナ素子
JP4834718B2 (ja) * 2008-01-29 2011-12-14 キヤノン株式会社 パルスレーザ装置、テラヘルツ発生装置、テラヘルツ計測装置及びテラヘルツトモグラフィー装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2610222C1 (ru) * 2015-12-02 2017-02-08 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Материал для фотопроводящих антенн

Also Published As

Publication number Publication date
US7633043B2 (en) 2009-12-15
JP2007281419A (ja) 2007-10-25
US7947942B2 (en) 2011-05-24
US20070218376A1 (en) 2007-09-20
US20100051811A1 (en) 2010-03-04

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