JP2007281419A5 - - Google Patents

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Publication number
JP2007281419A5
JP2007281419A5 JP2006342883A JP2006342883A JP2007281419A5 JP 2007281419 A5 JP2007281419 A5 JP 2007281419A5 JP 2006342883 A JP2006342883 A JP 2006342883A JP 2006342883 A JP2006342883 A JP 2006342883A JP 2007281419 A5 JP2007281419 A5 JP 2007281419A5
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JP
Japan
Prior art keywords
photoconductive
substrate
film
thin film
gap
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JP2006342883A
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English (en)
Japanese (ja)
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JP5196779B2 (ja
JP2007281419A (ja
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Priority to JP2006342883A priority Critical patent/JP5196779B2/ja
Priority claimed from JP2006342883A external-priority patent/JP5196779B2/ja
Priority to US11/683,782 priority patent/US7633043B2/en
Publication of JP2007281419A publication Critical patent/JP2007281419A/ja
Priority to US12/612,798 priority patent/US7947942B2/en
Publication of JP2007281419A5 publication Critical patent/JP2007281419A5/ja
Application granted granted Critical
Publication of JP5196779B2 publication Critical patent/JP5196779B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006342883A 2006-03-17 2006-12-20 光伝導素子及びセンサ装置 Expired - Fee Related JP5196779B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006342883A JP5196779B2 (ja) 2006-03-17 2006-12-20 光伝導素子及びセンサ装置
US11/683,782 US7633043B2 (en) 2006-03-17 2007-03-08 Photoconductive element and sensor device
US12/612,798 US7947942B2 (en) 2006-03-17 2009-11-05 Photoconductive element and sensor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006073613 2006-03-17
JP2006073613 2006-03-17
JP2006342883A JP5196779B2 (ja) 2006-03-17 2006-12-20 光伝導素子及びセンサ装置

Publications (3)

Publication Number Publication Date
JP2007281419A JP2007281419A (ja) 2007-10-25
JP2007281419A5 true JP2007281419A5 (enExample) 2010-02-18
JP5196779B2 JP5196779B2 (ja) 2013-05-15

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JP2006342883A Expired - Fee Related JP5196779B2 (ja) 2006-03-17 2006-12-20 光伝導素子及びセンサ装置

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US (2) US7633043B2 (enExample)
JP (1) JP5196779B2 (enExample)

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JP5196779B2 (ja) * 2006-03-17 2013-05-15 キヤノン株式会社 光伝導素子及びセンサ装置
JP4857027B2 (ja) * 2006-05-31 2012-01-18 キヤノン株式会社 レーザ素子
JP4958278B2 (ja) * 2007-03-13 2012-06-20 キヤノン株式会社 検査装置
DE102007063625B4 (de) * 2007-03-15 2009-10-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photoleiter und Verfahren zum Herstellen desselben
JP2009210421A (ja) * 2008-03-04 2009-09-17 Sony Corp テラヘルツ分光装置
US20100067203A1 (en) * 2008-07-08 2010-03-18 T-Ray Science Inc. Apparatus for carrying photoconductive integrated circuits
JP5392888B2 (ja) * 2008-07-08 2014-01-22 独立行政法人理化学研究所 近接場テラヘルツ光検出器
WO2010006440A1 (en) * 2008-07-18 2010-01-21 T-Ray Science Inc. Terahertz photoconductive antennas having transparent conductor electrodes and methods of making same
JP5328265B2 (ja) * 2008-08-25 2013-10-30 キヤノン株式会社 テラヘルツ波発生素子、及びテラヘルツ波発生装置
JP5717335B2 (ja) * 2009-01-23 2015-05-13 キヤノン株式会社 分析装置
KR101291319B1 (ko) * 2009-09-18 2013-07-30 한국전자통신연구원 테라헤르츠파 발생/검출기 및 그의 제조방법
KR20110061827A (ko) * 2009-12-02 2011-06-10 한국전자통신연구원 다결정 갈륨비소 박막을 포함하는 광전도체 소자 및 그 제조방법
US8642964B2 (en) * 2010-08-31 2014-02-04 The United States of America, as represented by the Secretary of Commerce, NIST High repetition rate photoconductive terahertz emitter using a radio frequency bias
KR20120036745A (ko) * 2010-10-08 2012-04-18 한국전자통신연구원 테라헤르츠파 발생 및 검출을 위한 집속렌즈 일체형 광전도 안테나 소자 및 그 제조방법
JP6062640B2 (ja) * 2011-03-18 2017-01-18 キヤノン株式会社 光伝導素子
EP2546634B1 (en) * 2011-07-14 2019-04-17 SCREEN Holdings Co., Ltd. Inspection apparatus and inspection method
JP2013076618A (ja) * 2011-09-30 2013-04-25 Sony Corp 光伝導素子、レンズ、テラヘルツ放射顕微鏡及びデバイスの製造方法
JP5892597B2 (ja) 2012-02-24 2016-03-23 株式会社Ｓｃｒｅｅｎホールディングス 検査装置および検査方法
JP6225461B2 (ja) * 2012-06-12 2017-11-08 株式会社リコー 照明装置及び位置情報管理システム
US20140292488A1 (en) * 2013-03-29 2014-10-02 Jerome Joseph Trohak InSight
EP3035394A1 (en) * 2014-12-17 2016-06-22 Centre National de la Recherche Scientifique Photoconductive antenna for terahertz waves, method for producing such photoconductive antenna and terahertz time domain spectroscopy system
FR3030787B1 (fr) * 2014-12-23 2017-01-27 Centre Nat Rech Scient Procede de re-focalisation d'un montage optique d'analyse d'echantillons
RU2610222C1 (ru) * 2015-12-02 2017-02-08 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Материал для фотопроводящих антенн

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JP3244976B2 (ja) * 1994-12-05 2002-01-07 キヤノン株式会社 半導体レーザの駆動方法及び半導体レーザ装置及び光通信方法及びノード及び光通信システム
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JPH11168262A (ja) * 1997-09-30 1999-06-22 Canon Inc 面型光デバイス、その製造方法、および表示装置
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JP4368082B2 (ja) * 1999-06-21 2009-11-18 浜松ホトニクス株式会社 テラヘルツ波分光器
JP3728147B2 (ja) * 1999-07-16 2005-12-21 キヤノン株式会社 光電気混載配線基板
JP3990846B2 (ja) * 1999-08-27 2007-10-17 キヤノン株式会社 面型光素子、その製造方法、およびこれを用いた装置
JP4001373B2 (ja) * 2003-01-21 2007-10-31 独立行政法人理化学研究所 集積回路断線検査方法と装置
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JP4164423B2 (ja) * 2003-08-29 2008-10-15 キヤノン株式会社 センシング部とポインティングデバイスとを含み構成される装置
JP4785392B2 (ja) * 2004-03-26 2011-10-05 キヤノン株式会社 テラヘルツ電磁波の発生素子の製造方法
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JP4794878B2 (ja) * 2004-03-26 2011-10-19 キヤノン株式会社 光伝導素子
JP3913253B2 (ja) * 2004-07-30 2007-05-09 キヤノン株式会社 光半導体装置およびその製造方法
JP3922463B2 (ja) * 2004-09-30 2007-05-30 独立行政法人科学技術振興機構 赤外光放射装置および赤外光検出装置ならびに時系列変換パルス分光計測装置
JP2006313803A (ja) * 2005-05-09 2006-11-16 Matsushita Electric Ind Co Ltd テラヘルツ電磁波発生装置
JP4402026B2 (ja) * 2005-08-30 2010-01-20 キヤノン株式会社 センシング装置
JP5196779B2 (ja) * 2006-03-17 2013-05-15 キヤノン株式会社 光伝導素子及びセンサ装置
JP4857027B2 (ja) * 2006-05-31 2012-01-18 キヤノン株式会社 レーザ素子
JP4977048B2 (ja) * 2007-02-01 2012-07-18 キヤノン株式会社 アンテナ素子
JP4834718B2 (ja) * 2008-01-29 2011-12-14 キヤノン株式会社 パルスレーザ装置、テラヘルツ発生装置、テラヘルツ計測装置及びテラヘルツトモグラフィー装置

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