JP5196385B2 - 半導体製造装置 - Google Patents
半導体製造装置 Download PDFInfo
- Publication number
- JP5196385B2 JP5196385B2 JP2010523951A JP2010523951A JP5196385B2 JP 5196385 B2 JP5196385 B2 JP 5196385B2 JP 2010523951 A JP2010523951 A JP 2010523951A JP 2010523951 A JP2010523951 A JP 2010523951A JP 5196385 B2 JP5196385 B2 JP 5196385B2
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- JP
- Japan
- Prior art keywords
- exhaust
- plate
- disposed
- holes
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- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3323—Problems associated with coating uniformity
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
12 工程チャンバ
14 生成チャンバ
16 コイル
20 支持プレート
32 第1排気プレート
34 第2排気プレート
36 排気ライン
40 ガス供給ユニット
44 拡散板
50 誘導チューブ
60 シャワーヘッド
70 支持テーブル
322、324、326 第1排気孔
332、334、336 第1カバー
342、344、346 第2排気孔
352、354 第2カバー
Claims (3)
- 基板に対する工程が行われる内部空間を提供するチャンバと、
前記内部空間の内部物質を外部に排気する排気ユニットと、
前記チャンバ内に配置されて基板を支持する支持部材と
を含み、
前記排気ユニットは、
前記物質の排気経路上の上部に位置し、複数の第1排気孔が形成される第1排気プレートと、
前記排気経路上の下部に位置し、複数の第2排気孔が形成される第2排気プレートと、
前記工程で前記複数の第1排気孔上に選択的にそれぞれ配置されて前記複数の第1排気孔を選択的に開閉し、前記内部物質が通過する前記複数の第1排気孔の流路面積を調節して前記工程の均一度を調節することができる複数の第1カバーと、
前記工程で前記複数の第2排気孔上に選択的にそれぞれ配置されて前記複数の第2排気孔を選択的に開閉し、前記内部物質が通過する前記複数の第2排気孔の流路面積を調節して前記工程の均一度を調節することができる複数の第2カバーと
を含み、
前記第1排気プレートは前記支持部材の外側に配置され、
前記第2排気プレートは前記第1排気プレートとほぼ平行に前記第1排気プレートの下部に配置され、
前記複数の第1排気孔は、
前記第1排気プレートの中心を基準に同心円上に配置される第1内側排気孔と、
前記第1内側排気孔の外側に配置され、前記第1排気プレートの中心を基準に同心円上に配置される第1外側排気孔と
を含み、
前記複数の第2排気孔は、
前記第2排気プレートの中心を基準に同心円上に配置される第2内側排気孔と、
前記第2内側排気孔の外側に配置され、前記第2排気プレートの中心を基準に同心円上に配置される第2外側排気孔と
を含む
ことを特徴とする半導体製造装置。 - 前記装置は、
前記内部空間にソースガスを供給するガス供給ユニットと、
前記内部空間に電界を形成して前記ソースガスからプラズマを生成するコイルと
をさらに含むことを特徴とする請求項1に記載の半導体製造装置。 - 前記装置は、
前記チャンバ内に配置されて基板を支持する支持部材と、
前記内部空間にソースガスを供給するガス供給ユニットと、
前記内部空間に電界を形成して前記ソースガスからプラズマを生成するコイルと、
前記支持部材の上部に前記支持部材と平行に提供され、前記プラズマを前記支持部材上に載置された前記基板に提供するシャワーヘッドと、
前記シャワーヘッドを前記支持部材の上部に固定する支持テーブルと
を含み、
前記支持テーブルは前記第1排気プレート上に設けられる
ことを特徴とする請求項1または2に記載の半導体製造装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070089582A KR100927375B1 (ko) | 2007-09-04 | 2007-09-04 | 배기 유닛 및 이를 이용하는 배기 조절 방법, 상기 배기 유닛을 포함하는 기판 처리 장치 |
KR10-2007-0089582 | 2007-09-04 | ||
PCT/KR2008/005210 WO2009031830A2 (en) | 2007-09-04 | 2008-09-04 | Exhaust unit, exhaust method using the exhaust unit, and substrate processing apparatus including the exhaust unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010538489A JP2010538489A (ja) | 2010-12-09 |
JP5196385B2 true JP5196385B2 (ja) | 2013-05-15 |
Family
ID=40429546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010523951A Expired - Fee Related JP5196385B2 (ja) | 2007-09-04 | 2008-09-04 | 半導体製造装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8771417B2 (ja) |
EP (1) | EP2195828A4 (ja) |
JP (1) | JP5196385B2 (ja) |
KR (1) | KR100927375B1 (ja) |
CN (1) | CN101849279B (ja) |
WO (1) | WO2009031830A2 (ja) |
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-
2007
- 2007-09-04 KR KR1020070089582A patent/KR100927375B1/ko active IP Right Grant
-
2008
- 2008-09-04 EP EP08793687A patent/EP2195828A4/en not_active Withdrawn
- 2008-09-04 JP JP2010523951A patent/JP5196385B2/ja not_active Expired - Fee Related
- 2008-09-04 US US12/676,519 patent/US8771417B2/en active Active
- 2008-09-04 WO PCT/KR2008/005210 patent/WO2009031830A2/en active Application Filing
- 2008-09-04 CN CN2008801135028A patent/CN101849279B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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WO2009031830A3 (en) | 2009-04-30 |
KR100927375B1 (ko) | 2009-11-19 |
US8771417B2 (en) | 2014-07-08 |
EP2195828A2 (en) | 2010-06-16 |
CN101849279B (zh) | 2012-05-23 |
EP2195828A4 (en) | 2011-05-04 |
WO2009031830A2 (en) | 2009-03-12 |
CN101849279A (zh) | 2010-09-29 |
US20100206231A1 (en) | 2010-08-19 |
JP2010538489A (ja) | 2010-12-09 |
KR20090024520A (ko) | 2009-03-09 |
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