JP5192163B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5192163B2
JP5192163B2 JP2007075858A JP2007075858A JP5192163B2 JP 5192163 B2 JP5192163 B2 JP 5192163B2 JP 2007075858 A JP2007075858 A JP 2007075858A JP 2007075858 A JP2007075858 A JP 2007075858A JP 5192163 B2 JP5192163 B2 JP 5192163B2
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Prior art keywords
layer
pad
wiring layer
wiring
semiconductor device
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JP2007075858A
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Japanese (ja)
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JP2008235728A (ja
JP2008235728A5 (enExample
Inventor
武司 五十嵐
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2007075858A priority Critical patent/JP5192163B2/ja
Priority to US12/054,087 priority patent/US8222736B2/en
Publication of JP2008235728A publication Critical patent/JP2008235728A/ja
Publication of JP2008235728A5 publication Critical patent/JP2008235728A5/ja
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    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20756—Diameter ranges larger or equal to 60 microns less than 70 microns
    • H—ELECTRICITY
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP2007075858A 2007-03-23 2007-03-23 半導体装置 Active JP5192163B2 (ja)

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US12/054,087 US8222736B2 (en) 2007-03-23 2008-03-24 Semiconductor device with Al pad

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JP4952534B2 (ja) * 2007-11-20 2012-06-13 三菱電機株式会社 窒化物半導体発光素子の製造方法
JP5468804B2 (ja) * 2009-03-31 2014-04-09 古河電気工業株式会社 半導体チップ、半導体パッケージ、パワーモジュール、及び半導体パッケージの製造方法
JP2011040582A (ja) 2009-08-11 2011-02-24 Fuji Xerox Co Ltd 発光素子およびその製造方法
US20140209926A1 (en) * 2013-01-28 2014-07-31 Win Semiconductors Corp. Semiconductor integrated circuit
JP6211867B2 (ja) * 2013-09-24 2017-10-11 ルネサスエレクトロニクス株式会社 半導体装置
JP6508601B2 (ja) * 2014-08-11 2019-05-08 パナソニックＩｐマネジメント株式会社 半導体装置
JP6738169B2 (ja) * 2016-03-11 2020-08-12 Ｄｏｗａエレクトロニクス株式会社 半導体光デバイスおよびその製造方法

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