JP5192163B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5192163B2
JP5192163B2 JP2007075858A JP2007075858A JP5192163B2 JP 5192163 B2 JP5192163 B2 JP 5192163B2 JP 2007075858 A JP2007075858 A JP 2007075858A JP 2007075858 A JP2007075858 A JP 2007075858A JP 5192163 B2 JP5192163 B2 JP 5192163B2
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JP
Japan
Prior art keywords
layer
pad
wiring layer
wiring
semiconductor device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007075858A
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English (en)
Japanese (ja)
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JP2008235728A5 (enExample
JP2008235728A (ja
Inventor
武司 五十嵐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Sumitomo Electric Device Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2007075858A priority Critical patent/JP5192163B2/ja
Priority to US12/054,087 priority patent/US8222736B2/en
Publication of JP2008235728A publication Critical patent/JP2008235728A/ja
Publication of JP2008235728A5 publication Critical patent/JP2008235728A5/ja
Application granted granted Critical
Publication of JP5192163B2 publication Critical patent/JP5192163B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007075858A 2007-03-23 2007-03-23 半導体装置 Active JP5192163B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007075858A JP5192163B2 (ja) 2007-03-23 2007-03-23 半導体装置
US12/054,087 US8222736B2 (en) 2007-03-23 2008-03-24 Semiconductor device with Al pad

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007075858A JP5192163B2 (ja) 2007-03-23 2007-03-23 半導体装置

Publications (3)

Publication Number Publication Date
JP2008235728A JP2008235728A (ja) 2008-10-02
JP2008235728A5 JP2008235728A5 (enExample) 2010-05-06
JP5192163B2 true JP5192163B2 (ja) 2013-05-08

Family

ID=39773866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007075858A Active JP5192163B2 (ja) 2007-03-23 2007-03-23 半導体装置

Country Status (2)

Country Link
US (1) US8222736B2 (enExample)
JP (1) JP5192163B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4952534B2 (ja) * 2007-11-20 2012-06-13 三菱電機株式会社 窒化物半導体発光素子の製造方法
JP5468804B2 (ja) * 2009-03-31 2014-04-09 古河電気工業株式会社 半導体チップ、半導体パッケージ、パワーモジュール、及び半導体パッケージの製造方法
JP2011040582A (ja) 2009-08-11 2011-02-24 Fuji Xerox Co Ltd 発光素子およびその製造方法
US20140209926A1 (en) * 2013-01-28 2014-07-31 Win Semiconductors Corp. Semiconductor integrated circuit
JP6211867B2 (ja) * 2013-09-24 2017-10-11 ルネサスエレクトロニクス株式会社 半導体装置
WO2016024387A1 (ja) * 2014-08-11 2016-02-18 パナソニックＩｐマネジメント株式会社 半導体装置
JP6738169B2 (ja) * 2016-03-11 2020-08-12 Ｄｏｗａエレクトロニクス株式会社 半導体光デバイスおよびその製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4388512A (en) * 1981-03-09 1983-06-14 Raytheon Company Aluminum wire ball bonding apparatus and method
JPS59210656A (ja) * 1983-05-16 1984-11-29 Fujitsu Ltd 半導体装置
JPS61220462A (ja) * 1985-03-27 1986-09-30 Toshiba Corp 化合物半導体装置
US4880708A (en) * 1988-07-05 1989-11-14 Motorola, Inc. Metallization scheme providing adhesion and barrier properties
JPH0760839B2 (ja) * 1990-03-15 1995-06-28 株式会社東芝 半導体装置
JPH04102358A (ja) * 1990-08-21 1992-04-03 Ngk Spark Plug Co Ltd 配線基板
EP1132961B1 (en) * 1991-07-24 2011-01-05 Denki Kagaku Kogyo Kabushiki Kaisha Method for producing a circuit substrate having a mounted semiconductor element
EP0646959B1 (en) * 1993-09-30 2001-08-16 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Metallization and bonding process for manufacturing power semiconductor devices
JPH10189649A (ja) * 1996-12-20 1998-07-21 Sharp Corp 化合物半導体素子及びその電極形成方法
JP3379062B2 (ja) 1997-12-02 2003-02-17 富士通カンタムデバイス株式会社 半導体装置及びその製造方法
JP2000049184A (ja) * 1998-05-27 2000-02-18 Hitachi Ltd 半導体装置およびその製造方法
AU6031499A (en) * 1998-09-11 2000-04-03 Key-Trak, Inc. Object control and tracking system with zonal transition detection
TW445616B (en) * 1998-12-04 2001-07-11 Koninkl Philips Electronics Nv An integrated circuit device
US6511901B1 (en) * 1999-11-05 2003-01-28 Atmel Corporation Metal redistribution layer having solderable pads and wire bondable pads
JP2002118121A (ja) * 2000-10-10 2002-04-19 Sanyo Electric Co Ltd 化合物半導体装置の製造方法
JP2002231748A (ja) * 2001-02-01 2002-08-16 Sanyo Electric Co Ltd バンプ電極の形成方法
JP2003209134A (ja) * 2002-01-11 2003-07-25 Hitachi Ltd 半導体装置及びその製造方法
JP2005166946A (ja) * 2003-12-02 2005-06-23 Espec Corp 基板及びその製造方法
US7394161B2 (en) * 2003-12-08 2008-07-01 Megica Corporation Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto
JP4777899B2 (ja) * 2004-10-29 2011-09-21 スパンション エルエルシー 半導体装置
JP4597653B2 (ja) 2004-12-16 2010-12-15 住友電工デバイス・イノベーション株式会社 半導体装置、それを備える半導体モジュールおよび半導体装置の製造方法。
JP2006245379A (ja) * 2005-03-04 2006-09-14 Stanley Electric Co Ltd 半導体発光素子
US7361993B2 (en) * 2005-05-09 2008-04-22 International Business Machines Corporation Terminal pad structures and methods of fabricating same

Also Published As

Publication number Publication date
US8222736B2 (en) 2012-07-17
US20080230908A1 (en) 2008-09-25
JP2008235728A (ja) 2008-10-02

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