JP5190225B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP5190225B2
JP5190225B2 JP2007187883A JP2007187883A JP5190225B2 JP 5190225 B2 JP5190225 B2 JP 5190225B2 JP 2007187883 A JP2007187883 A JP 2007187883A JP 2007187883 A JP2007187883 A JP 2007187883A JP 5190225 B2 JP5190225 B2 JP 5190225B2
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Japan
Prior art keywords
insulating film
semiconductor film
film
semiconductor
base substrate
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Expired - Fee Related
Application number
JP2007187883A
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English (en)
Japanese (ja)
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JP2009026917A (ja
JP2009026917A5 (enExample
Inventor
秀和 宮入
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007187883A priority Critical patent/JP5190225B2/ja
Publication of JP2009026917A publication Critical patent/JP2009026917A/ja
Publication of JP2009026917A5 publication Critical patent/JP2009026917A5/ja
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Publication of JP5190225B2 publication Critical patent/JP5190225B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
JP2007187883A 2007-07-19 2007-07-19 半導体装置及びその作製方法 Expired - Fee Related JP5190225B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007187883A JP5190225B2 (ja) 2007-07-19 2007-07-19 半導体装置及びその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007187883A JP5190225B2 (ja) 2007-07-19 2007-07-19 半導体装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2009026917A JP2009026917A (ja) 2009-02-05
JP2009026917A5 JP2009026917A5 (enExample) 2010-07-08
JP5190225B2 true JP5190225B2 (ja) 2013-04-24

Family

ID=40398463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007187883A Expired - Fee Related JP5190225B2 (ja) 2007-07-19 2007-07-19 半導体装置及びその作製方法

Country Status (1)

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JP (1) JP5190225B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI567985B (zh) * 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN111952238B (zh) * 2020-08-21 2024-06-14 中国科学院上海微系统与信息技术研究所 具有空腔结构的soi衬底及其制备方法
CN111952240B (zh) * 2020-08-21 2024-06-14 中国科学院上海微系统与信息技术研究所 具有纳米级空腔结构的soi衬底及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002343977A (ja) * 2002-03-26 2002-11-29 Nec Corp 電界効果型トランジスタ
JP4556158B2 (ja) * 2002-10-22 2010-10-06 株式会社Sumco 貼り合わせｓｏｉ基板の製造方法および半導体装置
JP4794810B2 (ja) * 2003-03-20 2011-10-19 シャープ株式会社 半導体装置の製造方法
JP2008053403A (ja) * 2006-08-24 2008-03-06 Nec Corp 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
JP2009026917A (ja) 2009-02-05

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