JP2009026917A5 - - Google Patents
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- Publication number
- JP2009026917A5 JP2009026917A5 JP2007187883A JP2007187883A JP2009026917A5 JP 2009026917 A5 JP2009026917 A5 JP 2009026917A5 JP 2007187883 A JP2007187883 A JP 2007187883A JP 2007187883 A JP2007187883 A JP 2007187883A JP 2009026917 A5 JP2009026917 A5 JP 2009026917A5
- Authority
- JP
- Japan
- Prior art keywords
- base substrate
- insulating film
- semiconductor film
- cavity
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 36
- 239000004065 semiconductor Substances 0.000 claims 24
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- -1 hydrogen ions Chemical class 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007187883A JP5190225B2 (ja) | 2007-07-19 | 2007-07-19 | 半導体装置及びその作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007187883A JP5190225B2 (ja) | 2007-07-19 | 2007-07-19 | 半導体装置及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009026917A JP2009026917A (ja) | 2009-02-05 |
| JP2009026917A5 true JP2009026917A5 (enExample) | 2010-07-08 |
| JP5190225B2 JP5190225B2 (ja) | 2013-04-24 |
Family
ID=40398463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007187883A Expired - Fee Related JP5190225B2 (ja) | 2007-07-19 | 2007-07-19 | 半導体装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5190225B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI567985B (zh) * | 2011-10-21 | 2017-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| CN111952238B (zh) * | 2020-08-21 | 2024-06-14 | 中国科学院上海微系统与信息技术研究所 | 具有空腔结构的soi衬底及其制备方法 |
| CN111952240B (zh) * | 2020-08-21 | 2024-06-14 | 中国科学院上海微系统与信息技术研究所 | 具有纳米级空腔结构的soi衬底及其制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002343977A (ja) * | 2002-03-26 | 2002-11-29 | Nec Corp | 電界効果型トランジスタ |
| JP4556158B2 (ja) * | 2002-10-22 | 2010-10-06 | 株式会社Sumco | 貼り合わせｓｏｉ基板の製造方法および半導体装置 |
| JP4794810B2 (ja) * | 2003-03-20 | 2011-10-19 | シャープ株式会社 | 半導体装置の製造方法 |
| JP2008053403A (ja) * | 2006-08-24 | 2008-03-06 | Nec Corp | 半導体装置および半導体装置の製造方法 |
-
2007
- 2007-07-19 JP JP2007187883A patent/JP5190225B2/ja not_active Expired - Fee Related
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