JP5182287B2 - アクティブマトリックス基板及びその製造方法 - Google Patents

アクティブマトリックス基板及びその製造方法 Download PDF

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Publication number
JP5182287B2
JP5182287B2 JP2009509110A JP2009509110A JP5182287B2 JP 5182287 B2 JP5182287 B2 JP 5182287B2 JP 2009509110 A JP2009509110 A JP 2009509110A JP 2009509110 A JP2009509110 A JP 2009509110A JP 5182287 B2 JP5182287 B2 JP 5182287B2
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Japan
Prior art keywords
active matrix
matrix substrate
substrate
group
silane coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2009509110A
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English (en)
Japanese (ja)
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JPWO2008123234A1 (ja
Inventor
昌弘 半村
宏紀 大森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zeon Corp
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Zeon Corp
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Publication date
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Priority to JP2009509110A priority Critical patent/JP5182287B2/ja
Publication of JPWO2008123234A1 publication Critical patent/JPWO2008123234A1/ja
Application granted granted Critical
Publication of JP5182287B2 publication Critical patent/JP5182287B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
JP2009509110A 2007-03-30 2008-03-25 アクティブマトリックス基板及びその製造方法 Expired - Fee Related JP5182287B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009509110A JP5182287B2 (ja) 2007-03-30 2008-03-25 アクティブマトリックス基板及びその製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007095352 2007-03-30
JP2007095352 2007-03-30
PCT/JP2008/055540 WO2008123234A1 (fr) 2007-03-30 2008-03-25 Substrat de matrice active et son procédé de fabrication
JP2009509110A JP5182287B2 (ja) 2007-03-30 2008-03-25 アクティブマトリックス基板及びその製造方法

Publications (2)

Publication Number Publication Date
JPWO2008123234A1 JPWO2008123234A1 (ja) 2010-07-15
JP5182287B2 true JP5182287B2 (ja) 2013-04-17

Family

ID=39830727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009509110A Expired - Fee Related JP5182287B2 (ja) 2007-03-30 2008-03-25 アクティブマトリックス基板及びその製造方法

Country Status (3)

Country Link
JP (1) JP5182287B2 (fr)
TW (1) TW200844562A (fr)
WO (1) WO2008123234A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5589286B2 (ja) * 2009-02-26 2014-09-17 日本ゼオン株式会社 薄膜トランジスタの製造方法、及び薄膜トランジスタ並びに表示装置
JP2011077450A (ja) * 2009-10-01 2011-04-14 Fujifilm Corp 薄膜トランジスタ及び薄膜トランジスタの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1048607A (ja) * 1996-08-02 1998-02-20 Sharp Corp 表示素子用基板およびその製造方法並びにその製造装置
WO2005073310A1 (fr) * 2004-01-30 2005-08-11 Zeon Corporation Composition de résine, méthode de sa production et du film de résine
JP2006186175A (ja) * 2004-12-28 2006-07-13 Nippon Zeon Co Ltd 電子部品用樹脂膜形成材料及びそれを用いた積層体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1048607A (ja) * 1996-08-02 1998-02-20 Sharp Corp 表示素子用基板およびその製造方法並びにその製造装置
WO2005073310A1 (fr) * 2004-01-30 2005-08-11 Zeon Corporation Composition de résine, méthode de sa production et du film de résine
JP2006186175A (ja) * 2004-12-28 2006-07-13 Nippon Zeon Co Ltd 電子部品用樹脂膜形成材料及びそれを用いた積層体

Also Published As

Publication number Publication date
JPWO2008123234A1 (ja) 2010-07-15
WO2008123234A1 (fr) 2008-10-16
TW200844562A (en) 2008-11-16

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